Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate

In_0.01Ga_0.99As thin films free of anti-phase domains were grown on 7° offcut Si (001) substrates using Ge as buffer layers. The Ge layers were grown by ultrahigh vacuum chemical vapor deposition using ‘low/high temperature’ two-step strategy, while the In_0.01Ga_0.99As layers were grown by metal-organic chemical vapor deposition. The etch-pit counting, cross-section and plane-view transmission electron microscopy, room temperature photoluminescence measurements are performed to study the dependence of In_0.01Ga_0.99As quality on the thickness of Ge buffer. The threading dislocation density of Ge layer was found to be inversely proportional to the square root of its thickness. The threading dislocation density of In_0.01Ga_0.99As on 300 nm thick Ge/offcut Si was about 4 × 10⁸ cm^− 2. Higher quality In_0.01Ga_0.99As can be obtained on thicker Ge/offcut Si virtual substrate. We found that the threading dislocations acted as non-radiative recombination centers and deteriorated the luminescence of In_0.01Ga_0.99As remarkably. Secondary ion mass spectrometry measurement indicated as low as 10¹⁶ cm^− 3 Ge unintended doping in In_0.01Ga_0.99As.     

AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications

We present the realization of high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures, which were grown on silicon substrates using an ultrathin SiC transition layer. The growth of AlGaN/GaN heterostructures on 3C-SiC(111)/Si(111) was performed using metalorganic chemical vapour deposition (MOCVD). The 3C-SiC(111) transition layer was realized by low pressure CVD and prevented Ga-induced meltback etching and Si-outdiffusion in the subsequent MOCVD growth. The two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface showed an electron sheet density of 1.5 × 10¹³ cm^− 3 and a mobility of 870 cm²/Vs. The HEMTs DC and RF characteristics were analysed and showed a peak cut-off frequency as high as 29 GHz for a 250 nm gate length.     

The influence of substrate orientation on the density of silicon nanowires grown on multicrystalline and single crystal substrates by electron cyclotron resonance chemical vapour deposition

The Au catalysed, vapour-liquid-solid growth of Si nanowires on Si substrates of different orientations has been studied using electron cyclotron resonance plasma-assisted chemical vapour deposition (ECRCVD). ECRCVD plasma excitation is found to strongly promote wire growth rate and density with wire diameters in excess of 200 nm under the conditions used. Substrate orientation and nanowire density are strongly correlated. This has been studied using multicrystalline as well as single crystal Si substrates. It is suggested that the Gibbs-Thomson effect can account for the behaviour of wire density with orientation. The application of an RF generated, DC self-bias of − 5 V on the substrate during growth strongly enhances wire density without affecting growth rate or diameter. A tentative model for wire growth has been proposed which is based on an initial incubation/crystallisation step, followed by silicon incorporation at the vapour-liquid interface being rate-limiting.     

Effect of acetylene flow rate on morphology and structure of carbon nanotube thick films grown by thermal chemical vapor deposition

Carbon nanotube (CNT) films were grown on nickel foil substrates by thermal chemical vapor deposition (CVD) with acetylene and hydrogen as the precursors. The morphology and structure of CNTs depending on the acetylene flow rate were characterized by a scanning electron microscope (SEM), a transmission electron microscope (TEM) and a Raman spectrometer, respectively. The effect of acetylene flow rate on the morphology and structure of CNT films was investigated. By increasing the acetylene flow rate from 10 to 90 sccm (standard cubic centimeter per minute), the yield and the diameter of CNTs increase. Also, the defects and amorphous phase in CNT films increase with increasing acetylene flow rate. Translated from Journal of Inorganic Materials, 2006, 21(1): 75–80 [译自: 无机材料学报]     

Influence of O contamination and Au cluster properties on the structural features of Si nanowires

Silicon nanowires (Si NWs) are the emerging nanostructures for future nanodevices. In this work we have prepared them by electron beam evaporation (EBE) through the vapor-liquid-solid (VLS) mechanism. We discuss the growth of epitaxial NWs by EBE and the possibility to control their orientation and length by changing the experimental conditions. Moreover, the effects of the surface contamination and of the Au cluster preparation on the NWs structural properties and density will be discussed. We demonstrate that any O contamination has to be avoided since just a very thin native SiO₂ layer stops ad-atom diffusion on the surface and inhibits the NWs growth. Au cluster preparation has a determinant role too: by varying the procedure for their formation, it is possible to change NWs density and length. In particular, we observed that by evaporating Au on the heated substrate, the droplets active to promote NW growth are immediately formed and a faster growth process starts. The growth rate is about a factor of 4 times higher than in the sample where the Au is evaporated at room temperature and the cluster formed after a subsequent thermal annealing. On the contrary, the slower process allows the atom arrangement and ordering in an epitaxial manner, and a precise control of NW orientation can be achieved.     

Electrochemical synthesis of Sn doped ZnO nanowires on zinc foil and their field emission studies

Sn doped ZnO films were obtained by cathodic electrodeposition on Zn foil. The X-ray diffraction analysis revealed formation of the wurtzite phase of ZnO only. The scanning electron microscopic images showed formation of randomly oriented ZnO nanowires having diameter less than 150 nm and lengths of several micrometers. The relative atomic percentage of Sn, estimated from the energy-dispersive spectra, was found to be 0.5 and 2.0 in the post-annealed ZnO films deposited for 10 and 40 min durations, respectively. The field emission characteristics of the Sn doped ZnO nanowires are found to be appreciable in terms of the threshold field and emission current stability.     

Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate

We investigated defect structures in the GaN film grown on a convex patterned sapphire substrate (CPSS) to determine the origin of structural improvement by transmission electron microscopy (TEM) and laser confocal scanning microscopy (LCSM). From the TEM results, we found that most of the threading dislocations (TDs) in the trench region of the CPSS were bent by lateral growth mode. Also the staircase-like TDs were observed near the curved slant region of the convex pattern; they converged at the top of the convex patterned region by staircase-upward propagation. This scenario seems to effectively prevent TDs from vertical propagation in the trench region. The photoluminescence mapping and spectra obtained by LCSM are consistent with these results from TEM observations. The generation of staircase-like TDs relates to the formation of a terraced surface during the growth, and suggests a probable mechanism that changes the propagation direction of TDs via the curved surface of the CPSS. The lateral growth and staircase-upward propagation of TDs are major factors on structural improvement of the GaN film grown on CPSS.     

The study of the interactions between graphene and Ge(001)/Si(001)

The interaction between graphene and germanium surfaces was investigated using a combination of microscopic and macroscopic experimental techniques and complementary theoretical calculations.Density functional theory (DFT) calculations for different reconstructions of the Ge(001) surface showed that the interactions between graphene and the Ge(001) surface introduce additional peaks in the density of states,superimposed on the graphene valence and conduction energy bands.The growth of graphene induces nanofaceting of the Ge(001) surface,which exhibits well-organized hill and valley structures.The graphene regions covered by hills are of high quality and exhibit an almost linear dispersion relation,which indicates weak graphene-germanium interactions.On the other hand,the graphene component occupying valley regions is significantly perturbed by the interaction with germanium.It was also found that the stronger graphene-germanium interaction observed in the valley regions is connected with a lower local electrical conductivity.Annealing of graphene/Ge(001)/Si(001) was performed to obtain a more uniform surface.This process results in a surface characterized by negligible hill and valley structures;however,the graphene properties unexpectedly deteriorated with increasing uniformity of the Ge(001) surface.To sum up,it was shown that the mechanism responsible for the formation of local conductivity inhomogeneities in graphene covering the Ge(001) surface is related to the different strength of graphene-germanium interactions.The present results indicate that,in order to obtain high-quality graphene,the experimental efforts should focus on limiting the interactions between germanium and graphene,which can be achieved by adjusting the growth conditions.     

Effects of argon and oxygen flow rate on water vapor barrier properties of silicon oxide coatings deposited on polyethylene terephthalate by plasma enhanced chemical vapor deposition

Plasma polymer coatings were deposited from hexamethyldisiloxane on polyethylene terephthalate (PET) substrates while varying the operating conditions, such as the Ar and O₂ flow rates, at a fixed radio frequency power of 300 W. The water vapor transmission rate (WVTR) of the untreated PET was 54.56 g/m²/day and was decreased after depositing the silicon oxide (SiO_x) coatings. The minimum WVTR, 0.47 g/m²/day, was observed at Ar and O₂ flow rates of 4 and 20 sccm, respectively, with a coating thickness of 415.44 nm. The intensity of the peaks for the Si-O-Si bending at 800-820 cm^− 1 and Si-O-Si stretching at 1000-1150 cm^− 1 varied depending on the Ar and O₂ flow rates. The contact angle of the SiO_x coated PET increased as the Ar flow rate was increased from 2 to 8 sccm at a fixed O₂ flow rate of 20 sccm. It decreased gradually as the oxygen flow rate increased from 12 to 28 sccm at a fixed Ar carrier gas flow rate. The examination by atomic force microscopy revealed a correlation of the SiO_x morphology and the water vapor barrier performance with the Ar and O₂ flow rates. The roughness of the deposited coatings increased when either the O₂ or Ar flow rate was increased.     

Structure and Electrical Characteristics of Zinc Oxide Thin Films Grown on Si (111) by Metal-organic Chemical Vapor Deposition

ZnO thin films were grown on Si(111) substrates by low-pressure metal-organic chemical vapor deposition.The crystal structures and electrical properties of as-grown sample were investigated by scanning electron microscopy(SEM) and conductive atomic force microscopy(C-AFM).It can be seen that with increasing growth temperature,the surface morphology of ZnO thin films changed from flake-like to cobblestones-like structure.The current maps were simultaneously recorded with the topography,which was gained by C-AFM contact mode.Conductivity for the off-axis facet planes presented on ZnO grains enhanced.Measurement results indicate that the off-axis facet planes were more electrically active than the c-plane of ZnO flakes or particles probably due to lower Schottky barrier height of the off-axis facet planes.     

Quantitative measurement of cementite dissociation in drawn pearlitic steel

Fractional dissociation of cementite was quantified as a function of strain by measuring the volume change of cementite in the pearlitic steel. The amount of carbon dissolved into the ferrite was estimated from the decrease of cementite volume, to correlate with the hardness in different strain level. The hardness showed linear relationship with the carbon dissolved into the ferrite matrix, which is believed to contribute in strengthening the drawn wire. Defects introduced from the deformation were believed to lower the energy barrier of cementite break-ups and to enhance the dissolution of carbon into ferrite.     

Self‐Assembly of Bowlic Supramolecules on Graphene Imaged at the Individual Molecular Level using Heavy Atom Tagging

The self‐assembly of bowlic supramolecules on graphene surface is studied with single molecular sensitivity. This is achieved by incorporating a heavy metal tag in the form of a single W atom into the tip of the molecular structure, which enables the direct imaging of molecular distribution using annular dark‐field scanning transmission electron microscopy (ADF‐STEM) along with graphene as an electron transparent support. The bowlic molecules have nonplanar geometry, and their orientations with respect to their graphene substrate and with each other result in various packing configurations. Statistical data on intermolecular distances is obtained from numerous measurements of the bright contrast from the single metal atom tags. The analysis shows that the bowlic molecules lie sideways on the graphene surface with favorable head‐to‐tail stacking, rather than sitting vertically with the bowl facing toward the graphene surface. In thicker film regions, nanoscale lamellar fringes are observed, demonstrating that large‐scale aligned packing extends into 3D. Image simulations and various molecular packing schemes are discussed to help interpret the ADF‐STEM images and the possible range of molecular interactions occurring. These results aid the understanding of nonplanar supramolecular assemblies on van der Waals surfaces for potential applications in molecular recognition by porous films.     

Silicon nanostructures fabricated by Au and SiH4 co-deposition technique using hot-wire chemical vapor deposition

In this study, the fabrication of Si nanostructures by Au and SiH₄ co-deposition technique using hot-wire chemical vapor deposition was demonstrated. A high deposition rate of 2.7 nm/s and a high density of silicon nanostructures with a diameter of about 140 nm were obtained at T_s of 250 °C. An increase in T_s led to a significant reduction in the size of the nanostructures. However, coalescence on the nanostructures was observed at T_s of 400 °C. The Si nanostructures exhibited a highly crystalline structure, which was induced by Au crystallites. The crystallite size and crystallinity of the Si nanostructures amplified with the increase in T_s. The presence of nanostructures enhanced the surface roughness of the samples and clearly reduced the reflection, especially in the visible region.     

Formation and structural characterization of nanocrystalline Si/SiC multilayers grown by hot filament assisted chemical vapor deposition using CH3SiH3 gas jets

We report on the formation and the structural characterization of nanocrystalline Si/SiC (nc-Si/SiC) multilayers on Si(100) by hot filament assisted chemical vapor deposition using CH₃SiH₃ gas pulse jets. Si rich amorphous SiC (a-Si_1 − xC_x, x ~ 0.33) was initially grown at the substrate temperature (T_s) of 600 °C with heating a hot filament at ~ 2000 °C. The following crystalline SiC layers were grown at T_s = 850 °C without utilizing a hot filament. When the a-Si_1 − xC_x layer was ultrathin (< 2 nm) on Si(100), this a-Si_1 − xC_x layer was transformed to a single epitaxial SiC layer during the subsequent SiC growth process. The Si{111} faceted pits were formed at the SiC/Si(100) interface due to Si diffusion processes from the substrate. When the thickness of the initial a-Si_1 − xC_x layer was increased to ~ 5 nm, a double layer structure was formed in which this amorphous layer was changed to nc-Si and nc-SiC was grown on the top resulting in the considerable reduction of the {111} faceted pits. It was found that nc-SiC was formed by consuming the Si atoms uniformly diffused from the a-Si_1 − xC_x layer below and that Si nanocrystals were generated in the a-Si_1 − xC_x layers due to the annealing effect during further multilayer growths.     

Morphology of carbon nanotubes synthesized by thermal CVD under high magnetic field up to 10 T

High magnetic fields up to 10 T are applied to thermal chemical vapor deposition (CVD) for carbon nanotube synthesis in order to control the nanotube morphology. Although changes of the nanotube morphology in the presence of magnetic field were not obviously discernible in the SEM images, an increase in the onion-like nano-carbons due to magnetic field was observed by TEM. It suggests that the magnetic field influences formation processes of nano-carbons including carbon nanotubes, via magnetic effects on metal catalysts.     

微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石

研究了衬底温度、核化密度、衬底表而预处理等工艺参数对微波等离子体化学气相沉积法在硅片上同时生长碳化硅和金刚石的影响.采用扫描电镜、X-射线衍射、喇曼光谱和红外光谱对样品进行了表征.结果表明:从高核化密度生长的金刚石膜中探测不到碳化硅;不论对硅衬底进行抛光预处理还是未抛光预处理,从低核化密度牛长的金刚石厚膜中总能探测到碳化硅.碳化硅生长在硅衬底上未被金刚石覆盖的地方,或者是在金刚石晶核之间的空洞处.碳化硅形成和金刚石生长是同时发生的两个竞争过程.此研究结果为制备金刚石和碳化砟复合材料提供了一种新的方法.     

Microstructural and frictional control of diamond-like carbon films deposited on acrylic rubber by plasma assisted chemical vapor deposition

In this paper we concentrate on the microstructure of diamond-like carbon films prepared by plasma assisted chemical vapor deposition on acrylic rubber. The temperature variation produced by the ion impingement during plasma cleaning and subsequent film deposition was monitored and controlled as a function of bias voltage and treatment time. Its influence during film growth on the appearance of patterns of cracks and wrinkles, caused by the thermal stresses is evaluated. Different growth modes are proposed in order to explain the smaller patch sizes observed at negative variations of temperature. The coefficient of friction (CoF) of the samples is measured using a pin-on-disk tribometer in non-lubricated conditions. Much lower CoF values than unprotected rubber are seen, which can be correlated with the observed patch size.     

Structural modifications and enhanced Raman scattering from multiwalled carbon nanotubes grown on titanium coated silicon single crystals

Multiwalled carbon nanotubes (MWCNTs) were grown on 10 nm iron (Fe) film by microwave plasma enhanced chemical vapor deposition using titanium (Ti) film as an interlayer. The Ti interlayer of thickness 5 nm-20 nm was sandwiched between Fe and silicon (Si) using thermal evaporation. Enhanced Raman response was observed in MWCNTs with increasing Ti interlayer thickness. This was related with the plasmonic effects occurring at the interface of the CNTs and the metallic support in a three layer system (Ti-Fe-CNTs). The increase in the G mode optical strength is attributed to surface enhanced resonance Raman scattering. Moreover, the increase in the D-mode and 2D-mode intensity is explained on the basis of double resonance effects. The crystallinity in the samples was calculated using I_D/I_G ratio. It was found that that I_D/I_G ratio decreases in three layer system with increasing Ti interlayer thickness as compared to a two layer (Fe-CNTs) system as reported earlier.     

Nanoscale interfacial engineering to grow Ge on Si as virtual substrates and subsequent integration of GaAs

We have demonstrated the scalability of a process previously dubbed as Ge “touchdown” on Si to substantially reduce threading dislocations below 10⁷/cm² in a Ge film grown on a 2 inch-diameter chemically oxidized Si substrate. This study also elucidates the overall mechanism of the touchdown process. The 1.4 nm thick chemical oxide is first formed by immersing Si substrates in a solution of H₂O₂ and H₂SO₄. Subsequent exposure to Ge flux creates 3 to 7 nm-diameter voids in the oxide at a density greater than 10¹¹/cm². Comparison of data taken from many previous studies and ours shows an exponential dependence between oxide thickness and inverse temperature of void formation. Additionally, exposure to a Ge or Si atom flux decreases the temperature at which voids begin to form in the oxide. These results strongly suggest that Ge actively participates in the reaction with SiO₂ in the void formation process. Once voids are created in the oxide under a Ge flux, Ge islands selectively nucleate within the void openings on the newly exposed Si. Island nucleation and growth then compete with the void growth reaction. At substrate temperatures between 823 and 1053 K, nanometer size Ge islands that nucleate within the voids continue to grow and coalesce into a continuous film over the remaining oxide. Coalescence of the Ge islands is believed to result in the creation of stacking faults in the Ge film at a density of 5 × 10⁷/cm². Additionally, coalescence results in films of 3 µm thickness having a root-mean-square roughness of 8 to 10 nm. We have found that polishing the films with dilute H₂O₂ results in roughness values below 0.5 nm. However, stacking faults originating at the Ge-SiO₂ interface and terminating at the Ge surface are polished at a slightly reduced rate, and show up as 1 to 2 nm raised lines on the polished Ge surface. These lines are then transferred into the subsequent growth morphology of GaAs deposited by metal-organic chemical vapor deposition. Room temperature photoluminescence shows that films of GaAs grown on Ge-on-oxidized Si have an intensity that is 20 to 25% compared to the intensity from GaAs grown on commercial Ge or GaAs substrates. Cathodoluminescence shows that nonradiative defects occur in the GaAs that spatially correspond to the stacking faults terminating at the Ge surface. The exact nature of these nonradiative defects in the GaAs is unknown, however, GaAs grown on annealed samples of Ge-on-oxidized Si, whereby annealing removes the stacking faults, have photoluminescence intensity that is comparable to GaAs grown on a GaAs substrate.     

Engineering III–V Semiconductor Nanowires for Device Applications

III–V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.