共查询到20条相似文献,搜索用时 15 毫秒
1.
Liann-Be Chang Yuan-Hsiao Chang Ming-Jer Jeng 《Photonics Technology Letters, IEEE》2007,19(15):1175-1177
We propose a microchannel structure with deep holes to enhance the extraction efficiency of InGaN-based light-emitting diodes (LEDs). Two different depth microchannel LEDs are examined experimentally. One has air holes penetrated through the active layer and the other does not. It is found that the light extraction efficiency in the LED with the penetrated air holes is significant h larger than that in the LED without penetrating holes. The reason can be attributed to the microchannel waveguide behaviors. In comparison to the conventional LEDs, the light output power of our fabricated LEDs with and without penetrating holes improved by 43.5% and 5.1%, respectively. 相似文献
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Huang S.-H. Horng R.-H. Wen K.-S. Lin Y.-F. Yen K.-W. Wuu D.-S. 《Photonics Technology Letters, IEEE》2006,18(24):2623-2625
A novel flip-chip structure of GaN-sapphire light-emitting diodes (LEDs) was developed to improve the external quantum efficiency, where the sapphire substrate was textured and shaped with beveled sidewalls using a wet etching technique. The forward voltage of the conventional flip-chip and shaped flip-chip GaN LEDs were 2.84 and 2.85 V at 20 mA, respectively. This indicates that the GaN LED was not destroyed during the sapphire wet etching process. It was found that the output power increased from 9.3 to 14.2 mW, corresponding to about 52% increases in the external quantum efficiency. The results agree well with the simulation data that the shaped flip-chip GaN LED can provide better light extraction efficiency than that of the conventional flip-chip sample 相似文献
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Se-Yeon Jung Sang Youl Lee June-O Song Sungho Jin Tae-Yeon Seong 《Journal of Electronic Materials》2011,40(11):2173-2178
We investigated the light output power of blue light-emitting diodes (LEDs) fabricated with AgNi contacts as a function of
the Ni content. Annealing the AgNi contacts at 400°C in air significantly improved their electrical characteristics. The AgNi
samples with 10.0 wt.% Ni showed reflectance of 80.9% at 460 nm, whereas the Ag-only contacts gave 71.1%. After annealing
at 400°C, the AgNi contacts exhibited better thermal stability than did the Ag-only contacts. Their current–voltage relationships
showed that blue LEDs fabricated with Ag-only contacts gave a forward voltage of 3.33 V at 20 mA, whereas those fabricated
with AgNi contacts with 10.0 wt.% Ni produced 3.03 V. LEDs fabricated with the AgNi contacts exhibited output power higher
by 5.9% to 19.1% than those with Ag-only contacts. Based on scanning electron microscopy and x-ray photoemission spectroscopy
results, the improved thermal and electrical behaviors are described and discussed. 相似文献
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We have demonstrated nitride-based near-ultraviolet mesh multiquantum-well (MQW) light-emitting diodes (LEDs) by etching through the MQW active region. With 20-mA injection current, it was found that forward voltages were 3.29, 3.31, and 3.38 V while output powers were 7.5, 9.0, and 11.3 mW for the planar indium-tin-oxide (ITO) LED, mesh ITO LED, and mesh MQW LED, respectively. The larger LED output power is attributed to the increased light extraction efficiency. 相似文献
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《Electron Device Letters, IEEE》2009,30(11):1152-1154
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《Electron Devices, IEEE Transactions on》2008,55(12):3375-3382
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《Photonics Technology Letters, IEEE》2009,21(5):331-333
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Chia-En Lee Yea-Chen Lee Hao-Chung Kuo Tien-Chang Lu Shing-Chung Wang 《Photonics Technology Letters, IEEE》2008,20(10):803-805
In this letter, the nitride-based near-ultraviolet (NUV) vertical-injection light-emitting diodes (VLEDs) with roughened mesh-surface are proposed and demonstrated by a combination of pattern sapphire substrate, wafer bonding, laser lift-off, and chemical wet etching processes. With the help of adopting a roughened mesh-surface, the light-output power (at 350 mA) of the NUV-VLEDs could be further enhanced about 20% as compared with that of the conventional NUV-VLED. 相似文献
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Gong Z. Zhang H.X. Gu E. Griffin C. Dawson M.D. Poher V. Kennedy G. French P.M.W. Neil M.A.A. 《Electron Devices, IEEE Transactions on》2007,54(10):2650-2658
Micropixellated InGaN light-emitting diodes (micro- LEDs) have a wide number of potential applications in areas including microdisplays, fluorescence-based assays and microscopy, and cell micromanipulation. Here, we present fabrication and performance details of matrix-addressable micro-LED devices which show significant improvements over their earlier counterparts. Devices with 64 x 64 micropixel elements, each of them having a 16-mum-diameter emission aperture on a 50-mum pitch, have been fabricated at blue (470 nm), green (510 nm), and UV (370 nm) wavelengths, respectively. Importantly, we have adopted a scheme of running n-metal tracks adjacent to each n-GaN mesa, so that resistance variation between the devices is reduced to below 8%, in contrast to the earlier fivefold resistance variation encountered. We have also made improvements to the spreading-layer formation scheme, resulting in significant increases in output power per element, improved current handling, and reduced turn-on voltages. These devices have been combined with a computer- driven programmable driver interface operating in constant- current mode, and representative microdisplay outputs are presented. 相似文献
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Hsu S.-C. Lee C.-Y. Hwang J.-M. Su J.-Y. Wuu D.-S. Horng R.-H. 《Photonics Technology Letters, IEEE》2006,18(23):2472-2474
We have demonstrated enhanced output power from roughened GaN-based light-emitting diodes (LEDs) by using electrodeless photoelectrochemical etching with a chopped source (ELPEC-CS etching). It was found that the 20-mA output power of the ELPEC-CS treated LED (with roughened surfaces on the top p-type and bottom n-type GaN surface as well as the mesa sidewall) was 1.41 and 2.57 times as high as those LEDs with a roughened p-type GaN surface and a conventional surface, respectively. The light output pattern of the ELPEC-CS treated LED was five times greater than the conventional LED at 0deg which was caused by the roughened GaN surface that improved the light extraction efficiency of the LED 相似文献
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《Photonics Technology Letters, IEEE》2009,21(11):718-720
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《Photonics Technology Letters, IEEE》2008,20(19):1621-1623
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使用纳米尺度的多孔阳极氧化铝(anodic aluminum oxide,AAO)作为刻蚀掩膜,刻蚀氧化铟锡(indium-tin oxide,ITO),形成纳米图形化表面,对于发光二极管的出光效率有明显的提升作用。AAO纳米掩膜的制备已广为报道,是纳电子学研究中常用的模板之一,工艺简单易行、可控性好。使用电感耦合反应离子刻蚀方法成功将纳米多孔结构转移到ITO上,形成ITO纳米结构。纳米图形化结构的引入使得器件有效减小了内部的全反射,在电压没有大幅提高,注入电流350 mA时,光学输出提高了7%。纳米尺度粗化结构LED与传统结构LED对比,提升了器件的外量子效率。 相似文献
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《Photonics Technology Letters, IEEE》2008,20(17):1455-1457
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Liang-Jyi Yan Sheu J.K. Wei-Chih Wen Tien-Fu Liao Ming-Jong Tsai Chih-Sung Chang 《Photonics Technology Letters, IEEE》2008,20(20):1724-1726
In this letter, AlGaInP-GaP-based light-emitting diodes (LEDs) were fabricated with an Si substrate and an SiO2-ITO-Ag omni-directional reflector using a metal-to-metal bonding technique. To enhance light extraction efficiency, a periodic texture was applied to the (Al0.5Ga0.5)0.5In0.5P surface layer of AlGaInP-Si LEDs by photolithography and a wet etching process. The exterior of the etched texture consists of a series of bowl-shaped recesses. With a 350-mA current injection, the typical output power of the AlGaInP-Si LEDs with and without the textured surface (LED-I and LED-II, respectively) were measured at approximately 118 and 81 mW, respectively, when the LED chips were bonded on the TO 46 without resin encapsulation. The enhancement of output power in LED-I can be attributed to a multitude of bowl-shaped notches on the surface, which resulted in a reduction of the reabsorption probability of the photons due to the fact that the photon path length in LED-I is shorter than in LED-II before the photons escape into the free space. 相似文献
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Ja-Yeon Kim Min-Ki Kwon Jae-Pil Kim Seong-Ju Park 《Photonics Technology Letters, IEEE》2007,19(23):1865-1867
This study investigated the characteristics of a triangular light-emitting diode (LED) and compared it to a standard quadrangular LED. The total radiant flux from the packaged triangular LED increased by 48% and 24% at input currents of 20 and 100 mA, respectively, compared to that of a quadrangular LED which was grown on patterned sapphire substrate. In light far-field beam distribution, the light extraction in the horizontal direction of the LED was much higher than that of the quadrangular LED due to the enhancement of light emission from the side walls of the triangular LED. 相似文献