Optical properties of poly(vinyl chloride)/poly(ethylene oxide) blend

The relatively high dielectric constant poly(vinyl chloride) (PVC) was blended with poly(ethylene oxide) (PEO) polymer electrolytes to improve their electrical conductivity from the optical spectra of the given polymeric system. The optical properties in the UV–visible region of PVC polymer containing 0%, 20%, 50% and 70% by weight PEO are reported. The optical results obtained were analyzed in terms of the absorption formula for non-crystalline materials. The absorption coefficient and the optical band energy gap (E_opt) have been obtained from direct allowed transitions in k-space at room temperature. The width of the tail of localized states in the band gap (ΔE) was evaluated using the Urbach-edges method. It was found that both (E_opt) and (ΔE) vary with the concentration of the PEO complex in the polymer matrix. In addition, a correlation between the energy gap and the ac-conductivity as a function of PEO complex concentration is also reported.     

Crystal growth and spectroscopic studies of novel Yb-doped K5Nd(MoO4)4 single crystals

K₅Nd(MoO₄)₄ crystals with different Yb³⁺ concentrations were grown using Czochralski technique. Room-temperature absorption spectra were recorded and assigned on the basis of Dieke's diagram for Nd³⁺ ion; the standard Judd-Ofelt theory has been used to analyze the spectra. Increase of Yb³⁺ concentration leads to variation of the corresponding Judd-Ofelt intensity parameters. Significant contribution of the Yb↔Nd energy transfer into the formation of the Nd³⁺ absorption spectra causes the observed changes. After illumination of the crystals with CW Nd:YAG laser changes of the birefringence for the laser line of CW He-Ne laser at 633 nm were studied. Birefringence changes show good correlation with the content of Yb ions.     

Optical properties change in amorphous (As2S3)0.87Sb0.13 thin films by photo and thermal induced process

Exposure with above band gap light and thermal annealing at a temperature near to glass transition temperature, of thermally evaporated amorphous (As₂S₃)_0.87Sb_0.13 thin films of 1 μm thickness, were found to be accompanied by structural effects, which in turn, lead to changes in the optical properties. The optical properties of thin films induced by illumination and annealing were studied by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Photo darkening or photo bleaching was observed in the film depending upon the conditions of the light exposure or annealing. These changes of the optical properties are assigned to the change of homopolar bond densities.     

Compositional dependence of absorption coefficient and band-gap for Nb2O5-SiO2 mixture thin films

The absorption coefficient of composite films consisting of niobia (Nb₂O₅) and silica (SiO₂) mixtures is studied for photon energies around the band gap. The films were deposited by co-evaporation and their composition was varied by changing the ratio of deposition rates of the two materials. Both, as-deposited and thermally annealed films were characterized by different techniques: the absorption coefficient was determined by spectrophotometric measurements and the structural properties were investigated using infrared spectroscopy, transmission electron microscopy and X-ray diffraction. The correlation between the variations of absorption properties and film composition and structure is established. The absorption coefficients determined experimentally are compared with the results derived from effective medium theories in order to evaluate the suitability of these theories for the studied composites.     

Optical properties of nanocrystalline SnS2 thin films

Thin films of nanocrystalline SnS₂ on glass substrates were prepared from solution by dip coating and then sulfurized in H₂S (H₂S:Ar = 1:10) atmosphere. The films had an average thickness of 60 nm and were characterized by X-ray diffraction studies, scanning electron microscopy, EDAX, transmission electron microscopy, UV-vis spectroscopy, and Raman spectroscopy. The influence of annealing temperature (150-300 °C) on the crystallinity and particle size was studied. The effect of CTAB as a capping agent has been tested. X-ray diffraction analysis revealed the polycrystalline nature of the films with a preferential orientation along the c-axis. Optical transmission spectra indicated a marked blue shift of the absorption edge due to quantum confinement and optical band gap was found to vary from 3.5 to 3.0 eV with annealing temperature. Raman studies indicated a prominent broad peak at ∼314 cm⁻¹, which confirmed the presence of nanocrystalline SnS₂ phase.     

Effect of thermal annealing time on optical and structural properties of TeO2 thin films

TeO₂ thin films were deposited on quartz substrates by rf reactive sputtering technique from a Te metal target. The obtained samples were annealed in an argon atmosphere at 450 °C for different annealing times up to 90 min. X-ray diffraction studies revealed that the as-grown samples were amorphous and there was no appreciable change in structure for a short annealing time. Thin films became polycrystalline with the tetragonal (α-phase) structure of tellurium dioxide crystal with the increase of the thermal annealing time. The refractive index and optical energy gap of the films were calculated by modelling transmittance spectra. The optical energy gap decreased continuously from 3.83 eV to 3.71 eV with increasing thermal annealing time.     

Optical properties of SbI3 single crystalline platelets

Optical parameters of platelets of crystalline antimony triiodide (SbI₃) have been evaluated using spectrogoniometric interference spectroscopy technique. Spectral characteristics of real parts of refractive indices of radiation with electric vector normal and parallel to the optical c-axis of SbI₃ crystalline platelets (i.e. n_o, n_e - refractive indices for ordinary and extraordinary rays) have been shown. The temperature dependences of spectra of optical parameters (n_o and absorption coefficient of radiation with electric vector normal to the optical c-axis) have been presented. The temperature dependences of fitted optical indirect allowed energy gap of SbI₃, Urbach energy and phonons energies are the main findings of the presented work. The obtained results have been compared with literature data.     

Optical properties of MgO doped near-stoichiometric LiTaO3 single crystals

Comparative study of the optical properties of undoped and 1-3 mol% MgO doped near-stoichiometric LiTaO₃ (SLT) crystals were undertaken. It was observed that the red shift in the absorption edge occurred with the increasing MgO doping concentration. The infrared absorption spectrum of the OH-stretch-mode in SLT was measured for crystals of undoped and 1-3 mol% MgO doped compositions. The coercive field for the crystals was measured to be 0.913, 0.610 and 0.735 kV/mm for 1-3 mol% MgO doped SLT, respectively. Photorefractive damage of SLT single crystals with 1-3 mol% MgO doping levels was measured to be 136.29, 180.25 and 222.54 MW/cm².     

Optical, electrical and thermal studies on (As2Se3)3−x(As2Te3)x glasses

Optical properties and conductivity of glassy (As₂Se₃)_3−x(As₂Te₃)_x were studied for 0 ≤ x ≤ 3. The films of the above mentioned compound were prepared by thermal evaporation with thickness of about 250 nm. The optical-absorption edge is described and calculated using the non-direct transition model and the optical band gap is found to be in the range of 0.92 to 1.84 eV. While, the width of the band gap tail exhibits opposite behaviour and is found to be in the range of 0.157 to 0.061 eV, this behaviour is believed to be associated with cohesive energy and average coordination number. The conductivity measurement on the thin films is reported in the temperature range from 280 to 190 K. The conduction that occurs in this low-temperature range is due to variable range hopping in the band tails of localized states, which is in reasonable agreement with Mott's condition of variable range hopping conduction. Some parameters such as coordination number, molar volume and theoretical glass transition temperature were calculated and discussed in the light of the topological bonding structure.     

Optical and thermal analysis of ZnO-CdO-TeO2 glasses doped with Nd

It is presented the Nd doping of the glassy ZnO-CdO-TeO₂ ternary system. The Nd-doped oxide glasses were prepared by conventional melt-quenching method using three different compositions from this system. X-rays diffraction (XRD) diagrams in these materials reveal that they are basically vitreous structure. Infrared (IR) spectra of the glasses showed the characteristic bands at 665, 670, and 675 cm⁻¹, which correspond to the trigonal structure of TeO₃. The presence of Nd³⁺ was detected in the visible and infrared region of the spectra by optical absorption (OA) measurements of the band gap and by photoluminescence (PL) experiments. Glasses showed light emission due to the transition: ⁴F_3/2 → ⁴I_9/2. Differential thermal analysis (DTA) of these glasses have shown that T_g temperatures are in the 465-485 °C and T_c in the 800-1000 °C ranges.     

Effect of substrate temperatures on the optical properties of evaporated Sc2O3 thin films

Scandium oxide (Sc₂O₃) films were deposited by electron beam evaporation with substrate temperatures varying from 50 to 350 °C. X-ray diffraction, scanning electron microscopy, spectrometer, and optical profilograph were employed to investigate the structural and optical properties of the films. The refractive index and extinction coefficient were calculated from the transmittance and reflectance spectra, and then the energy band gaps were deduced and discussed. Laser induced damage threshold of the films were also characterized. Optical and structural properties of Sc₂O₃ films were found to be sensitive to substrate temperature.     

Optical properties of the c-axis oriented LiNbO3 thin film

C-axis oriented Lithium Niobate (LiNbO₃) thin films have been deposited onto epitaxially matched (001) sapphire substrate using pulsed laser deposition technique. Structural and optical properties of the thin films have been studied using the X-ray diffraction (XRD) and UV-Visible spectroscopy respectively. Raman spectroscopy has been used to study the optical phonon modes and defects in the c-axis oriented LiNbO₃ thin films. XRD analysis indicates the presence of stress in the as-grown LiNbO₃ thin films and is attributed to the small lattice mismatch between LiNbO₃ and sapphire. Refractive index (n = 2.13 at 640 nm) of the (006) LiNbO₃ thin films was found to be slightly lower from the corresponding bulk value (n = 2.28). Various factors responsible for the deviation in the refractive index of (006) LiNbO₃ thin films from the corresponding bulk value are discussed and the deviation is mainly attributed to the lattice contraction due to the presence of stress in deposited film.     

VO2 thin films deposited on silicon substrates from V2O5 target: Limits in optical switching properties and modeling

Thermochromic VO₂ thin films presenting a phase change at T_c = 68 °C and having variable thickness were deposited on silicon substrates (Si-001) by radio-frequency sputtering. These thin films were obtained from optimized reduction of low cost V₂O₅ targets. Depending on deposition conditions, a non-thermochromic metastable VO₂ phase might also be obtained. The thermochromic thin films were characterized by X-ray diffraction, atomic force microscopy, ellipsometry techniques, Fourier transform infrared spectrometry and optical emissivity analyses. In the wavelength range 0.3 to 25 μm, the optical transmittance of the thermochromic films exhibited a large variation between 25 and 100 °C due to the phase transition at T_c: the contrast in transmittance (difference between the transmittance values to 25 °C and 100 °C) first increased with film thickness, then reached a maximum value. A model taking into account the optical properties of both types of VO₂ film fully justified such a maximum value. The n and k optical indexes were calculated from transmittance and reflectance spectra. A significant contrast in emissivity due to the phase transition was also observed between 25 and 100 °C.     

Optical constants of Zn-doped CuInS2 thin films

Optical properties of Zn-doped CuInS₂ thin films grown by double source thermal evaporation method have been studied. The amount of the Zn source was determined to be 0%-4% molecular weight compared with CuInS₂ source. After that, samples were annealed in vacuum at the temperature of 450 °C in quartz tube. The optical constants of the deposited films were obtained from the analysis of the experimental recorded transmission and reflexion spectral data over the wavelength range 300-1800 nm. It is observed that there is an increase in optical band gap with increasing Zn % molecular weight. It has been found that the refractive index and extinction coefficient are dependent on Zn incorporation. The complex dielectric constants of Zn-doped CuInS₂ films have been calculated in the investigated wavelength range. It was found that the refractive index dispersion data obeyed the single oscillator of the Wemple-DiDomenico model, from which the dispersion parameters and the high-frequency dielectric constant were determined. The electric free carrier susceptibility and the carrier concentration on the effective mass ratio were estimated according to the model of Spitzer and Fan.     

Optical properties of transparent Dy doped Ba2TiSi2O8 glass ceramic

The Ba₂TiSi₂O₈ is a well known piezoelectric, ferroelectric and non-linear crystal. Nanocrystals of Ba₂TiSi₂O₈ doped with 1.5 Dy³⁺ have been obtained by thermal treatment of a precursor glass and their optical properties have been studied. X-ray diffraction patterns and optical measurements have been carried out on the precursor glass and glass ceramic samples. The emission spectra corresponding to the Dy³⁺: ⁴F_9/2 → ⁶H_13/2 (575 nm), ⁴F_9/2 → ⁶H_11/2 (670 nm) and ⁴F_9/2 → ⁶H_9/2 (757 nm) transitions have been obtained under laser excitation at 473 nm. These measurements confirm the incorporation of the Dy³⁺ ions into the Ba₂TiSi₂O₈ nanocrystals which produces an enhancement of luminescence at 575 nm. At this wavelength has been demonstrated a maximum optical amplification around 1.9 cm⁻¹ (∼8.2 dB/cm).     

Structure, morphology and optical properties of nanocrystalline yttrium oxide (Y2O3) thin films

Yttrium oxide (Y₂O₃) thin films were grown onto Si(1 0 0) substrates using reactive magnetron sputter-deposition at temperatures ranging from room temperature (RT) to 500 °C. The effect of growth temperature (T_s) on the growth behavior, microstructure and optical properties of Y₂O₃ films was investigated. The structural studies employing reflection high-energy electron diffraction RHEED indicate that the films grown at room temperature (RT) are amorphous while the films grown at T_s = 300-500 °C are nanocrystalline and crystallize in cubic structure. Grain-size (L) increases from ∼15 to 40 nm with increasing T_s. Spectroscopic ellipsometry measurements indicate that the size-effects and ultra-microstructure were significant on the optical constants and their dispersion profiles of Y₂O₃ films. A significant enhancement in the index of refraction (n) (from 2.03 to 2.25) is observed in well-defined Y₂O₃ nanocrystalline films compared to that of amorphous Y₂O₃. The observed changes in the optical constants were explained on the basis of increased packing density and crystallinity of the films with increasing T_s. The spectrophotometry analysis indicates the direct nature of the band gap (E_g) in Y₂O₃ films. E_g values vary in the range of 5.91-6.15 eV for Y₂O₃ films grown in the range of RT-500 °C, where the lower E_g values for films grown at lower temperature is attributed to incomplete oxidation and formation of chemical defects. A direct, linear relationship between microstructure and optical parameters found for Y₂O₃ films suggest that tuning optical properties for desired applications can be achieved by controlling the size and structure at the nanoscale dimensions.     

Optical properties of In2O3 films prepared by spray pyrolysis

In₂O₃ thin films have been deposited on glass substrates by spray pyrolysis. InCl₄ was used as the solute to prepare the starting solution with a concentration of 0.1 M. The films were grown at different substrate temperatures ranging from 300 to 400 °C. The as-grown layers were optically characterized in order to evaluate the absorption coefficient, optical band gap, refractive index, extinction coefficient and other optical parameters. The influence of substrate temperature on these parameters was reported and discussed.     

Optical properties and hydrophilic behaviors of TaOxNy thin films with and without rapid thermal annealing

TaO_xN_y thin films were prepared using DC reactive sputtering of Ta target with the variation of (O₂ + N₂)/Ar ratio, followed by rapid thermal annealing (RTA) at 800 °C for 5 min. During RTA, the amorphous structure of the as-deposited films would transform to crystallized phases that might contain either TaON, or Ta₂O_5, or both. With the increase of (O₂ + N₂)/Ar ratio, Ta₂O₅ phase becomes more dominant, while TaON was formed in an opposite way. Elemental analysis also shows the same trend. Hydrophilicity and optical properties of these films were found to be dependent on phases formed after annealing. The optical band gap was measured and calculated to be in the range of 2.43 eV (510 nm) to 3.94 eV (315 nm). The films with low band gap values exhibited super hydrophilicity behavior under visible light irradiation, mainly due to their light absorption had been extended to visible light range. Clearly, it was due to the existence of TaON phase.     

Influence of substrate absorption on accuracy of determination of refractive index and thickness of uniform thin chalcogenide Cu1[As2(S0.5Se0.5)3]99 film

The envelope method is a commonly used method for determination of some important optical constants, by using the envelopes of the transmittance T(λ) and/or reflectance R(λ) spectrum of the thin film deposited on transparent substrate. Two envelope methods were carried out in this paper: standard—method which assumes that substrate is absolutely transparent and modified—method which takes substrate absorption into account.The investigated sample is a uniform thin chalcogenide Cu₁[As₂(S_0.5Se_0.5)₃]₉₉ film, deposited onto two kinds of a weakly absorbing substrates that differ in thickness.It was shown that the degree of accuracy in determination of chosen optical parameters for both investigated samples is notably improved when the absorbance of the bare substrates is considered in the expressions for the envelopes.