A strategy for fabricating textured silicon nitride with enhanced thermal conductivity

C-axis textured Si₃N₄ with a high thermal conductivity of 176 W m⁻¹ K⁻¹ along the grain alignment direction was fabricated by slip casting raw α-Si₃N₄ powder seeded with near-equiaxed β-Si₃N₄ particles and Y₂O₃–MgSiN₂ as sintering additives in a rotating strong magnetic field of 12 T, followed by gas pressure sintering at 1900 °C for 12 h at a nitrogen pressure of 1 MPa. The green material reached a relative density of 57%, with slip casting and the sintered material exhibited a relative density of 99% and a Lotgering orientation factor of 0.98. The morphology of the β-Si₃N₄ seeds had little effect on the texture development and thermal anisotropy of textured Si₃N₄. The technique developed provides highly conductive Si₃N₄ with conductivity to the thickness direction, which is a major advantage in practical use. The technique is also simple, inexpensive and effective for producing textured Si₃N₄ with high thermal conductivity of over 170 W m⁻¹ K⁻¹.     

Variation of sintering parameters at an early stage of densification affecting β-Si3N4-microstructure

The influence of sintering parameters at an early stage of densification on the evolution of a bimodal microstructure in Si₃N₄ ceramics was investigated. Commonly two different methods are pursued to design a bimodal Si₃N₄ microstructure: (i) annealing at a later sintering stage (T > 1850 °C) initiating β-Si₃N₄ grain growth via Ostwald ripening and (ii) seeding with β-Si₃N₄ nuclei, which abnormally grow during the liquid-phase sintering process. In this study, a third and novel method to design Si₃N₄ microstructures by affecting intrinsic nucleation phenomena at an early sintering stage is presented. In order to study the influence of sintering parameters on β-Si₃N₄ nuclei formation during the early stage of densification, temperature and pressure were systematically changed. Starting from identical green bodies (identical processing and doping), the variation of the sintering parameters affected intrinsic β-Si₃N₄ nucleation. This procedure allows variation in the fineness of the matrix as well as in the number and dimension of the large elongated β-Si₃N₄ grains embedded in the matrix. Since identical green bodies are used as starting material, the resulting microstructure can easily be tailored toward corresponding application needs.     

Synthesis and properties of AlN/MAS/Si3N4 ternary glass-ceramic composites with in-situ grown rod-like β-Si3N4 crystals

The AlN/MAS/Si₃N₄ ternary composites with in-situ grown rod-like β-Si₃N₄ were obtained by a two-step sintering process. The microstructure analysis, compositional investigation as well as properties characterization have been systematically performed. The AlN/MAS/Si₃N₄ ternary composites can be densified at 1650 °C in nitrogen atmosphere. The in-situ grown rod-like β-Si₃N₄ grains are beneficial to the improvement of thermal, mechanical, and dielectric properties. The thermal conductivity of the composites was increased from 14.85 to 28.45 W/(m K) by incorporating 25 wt% α-Si₃N₄. The microstructural characterization shows that the in-situ growth of rod-like β-Si₃N₄ crystals leads to high thermal conductivity. The AlN/MAS/Si₃N₄ ternary composite with the highest thermal conductivity shows a low relative dielectric constant of 6.2, a low dielectric loss of 0.0017, a high bending strength of 325 MPa, a high fracture toughness of 4.1 MPa m^1/2, and a low thermal expansion coefficient (α_{25–300 °C}) of 5.11 × 10^?6/K. This ternary composite with excellent comprehensive performance is expected to be used in high-performance electronic packaging materials.     

Enhanced thermal conductivity of low-temperature sintered borosilicate glass–AlN composites with β-Si3N4 whiskers

The effects of β-Si₃N₄ whiskers on the thermal conductivity of low-temperature sintered borosilicate glass–AlN composites were systematically investigated. The thermal conductivity of borosilicate glass–AlN ceramic composite was increased from 11.9 to 18.8 W/m K by incorporating 14 vol% β-Si₃N₄ whiskers, and high flexural strength up to 226 MPa were achieved along with low relative dielectric constant of 6.5 and dielectric loss of 0.16% at 1 MHz. Microstructure characterization and percolation model analysis indicated that thermal percolation network formation in the ceramic composites led to the high thermal conductivity. The crystallization of the borosilicate microcrystal glass also contributed to the enhancement of thermal conductivity. Such ceramic composites with low sintering temperature and high thermal conductivity might be a promising material for electronic packaging applications.     

Influence of α-Si3N4 coarse powder on densification,microstructure, mechanical properties,and thermal behavior of silicon nitride ceramics

Silicon nitride (Si₃N₄) ceramics, with different ratios of fine and coarse α-Si₃N₄ powders, were prepared by spark plasma sintering (SPS) and heat treatment. Further, the influence of coarse α-Si₃N₄ powder on densification, microstructure, mechanical properties, and thermal behavior of Si₃N₄ ceramics was systematically investigated. Compared with fine particles, coarse particles exhibit a slower phase transition rate and remain intact until the end of SPS. The remaining large-sized grains of coarse α-Si₃N₄ induce extensive growth of neighboring β-Si₃N₄ grains and promote the development of large elongated grains. Noteworthy, an appropriate number of large elongated grains distributed among fine-grained matrix forms bimodal microstructural distribution, which is conducive to superior flexural strength. Herein, Si₃N₄ ceramics with flexural strength of 861.34 MPa and thermal conductivity of 65.76 W m⁻¹ K⁻¹ were obtained after the addition of 40 wt% coarse α-Si₃N₄ powder.     

Improved thermal conductivity of sintered reaction-bonded silicon nitride using a BN/graphite powder bed

Sintered reaction-bonded silicon nitride (SRBSN) with improved thermal conductivity was achieved after the green compact of submicron Si powder containing 4.22 wt% impurity oxygen and Y₂O₃-MgO additives was nitrided at 1400 °C for 6 h and then post-sintered at 1900 °C for 12 h using a BN/graphite powder bed. During nitridation, the BN/10 wt% C powder bed altered the chemistry of secondary phase by promoting the removal of SiO₂, which led to the formation of larger, purer and more elongated Si₃N₄ grains in RBSN sample. Moreover, it also enhanced the elimination of SiO₂ and residual Y₂Si₃O₃N₄ secondary phase during post-sintering, and thus induced larger elongated grains, decreased lattice oxygen content and increased Si₃N₄-Si₃N₄ contiguity in final SRBSN product. These characteristics enabled SRBSN to obtain significant increase (∼40.7%) in thermal conductivity from 86 to 121 W ∙ m⁻¹ ∙ K⁻¹ without obvious decrease in electrical resistivity after the use of BN/graphite instead of BN as powder bed.     

The Microstructure and thermal diffusivity of carbon nanostructures/Si3N4 composites processed using spark plasma sintering

Graphene nanoribbons (GNRs) were obtained by unzipping multiwall carbon nanotubes (MWCNTs). Three different silicon nitride-carbon nanostructures were prepared by spark plasma sintering (SPS): ceramic composites that contained 1 wt% carbon nanofibers (CNFs), 1 wt% MWCNTs and 1 wt% GNRs respectively. The α to β-Si₃N₄ transformation ratio and thermal diffusivity of GNR/Si₃N₄ composites were higher than both CNF/Si₃N₄ composites and MWCNT/Si₃N₄ composites. Furthermore, the higher thermal diffusivities of GNR/Si₃N₄ composites can primarily be attributed to the higher number of elongate β-Si₃N₄ grains.     

Synthesis of pure rod-like α-Si3N4 powder with in situ C/SBA-15 composite

Well crystallized pure rod-like α-Si₃N₄ powder (PRSN) without β-Si₃N₄ was successfully synthesized by carbothermal reduction-nitridation (CRN). In situ carbon/mesoporous silica composite (C/SBA-15) was used as a new kind of raw material. Due to in situ composited carbon, the CRN temperature was decreased and the phase transition from α to β-Si₃N₄ was hindered. The sintering temperature was lowered to 1380 °C and the soaking time of the optimal synthesis condition was reduced to 6 h. Moreover, the as-synthesized rod-like α-Si₃N₄, which is induced by SBA-15, was used to enhance the fracture toughness (K_Ic) of α-Si₃N₄ based ceramics, which was sintered by spark plasma sintering (SPS). Compared with the undoped ceramics (2.9 MPa m^1/2), α-Si₃N₄ ceramics doped with 10 vol% PRSN exhibited a higher K_Ic value (4.9 MPa m^1/2), and lower dielectric loss in MHz frequency range. The results demonstrated that the PRSN powder would be promising for toughening α-Si₃N₄ based ceramics.     

Effect of post-sintering heat-treatment on thermal and mechanical properties of Si3N4 ceramics sintered with different additives

To improve the thermal conductivity of Si₃N₄ ceramics, elimination of grain-boundary glassy phase by post-sintering heat-treatment was examined. Si₃N₄ ceramics containing SiO₂–MgO–Y₂O₃-additives were sintered at 2123 K for 2 h under a nitrogen gas pressure of 1.0 MPa. After sintering, the SiO₂ and MgO could be eliminated from the ceramics by vaporization during post-sintering heat-treatment at 2223 K for 8 h under a nitrogen gas pressure of 1.0 MPa. Thermal conductivity of 3 mass% SiO₂, 3 mass% MgO and 1 mass% Y₂O₃-added Si₃N₄ ceramics increases from 44 to 89 Wm⁻¹ K⁻¹ by the decrease in glassy phase and lattice oxygen after the heat-treatment. Relatively higher fracture toughness (3.8 MPa m^1/2) and bending strength (675 MPa) with high hardness (19.2 GPa) after the heat-treatment were achieved in this specimen. Effects of heat-treatment on microstructure and chemical composition were also observed, and compared with those of Y₂O₃–SiO₂-added and Y₂O₃–Al₂O₃-added Si₃N₄ ceramics.     

A new estimation method for the intrinsic thermal conductivity of nonmetallic compounds: A case study for MgSiN2, AlN and β-Si3N4 ceramics

A new method for estimating the maximum achievable thermal conductivity of non-electrically conducting materials is presented. The method is based on temperature dependent thermal diffusivity data using a linear extrapolation method enabling discrimination between phonon-phonon and phonon-defect scattering. The thermal conductivities estimated in this way for MgSiN₂, AlN and β-Si₃N₄ ceramics at 300 K equal 28, 200 and 105 W m⁻¹ K⁻¹, respectively in favourable agreement with the highest experimental values of 23, 266 and 106–122 W m⁻¹ K⁻¹. This suggests the general applicability of the proposed estimation method for non-metallic compounds. It is expected that when optic phonons contribute to the heat conduction (as is the case for AlN) the intrinsic thermal conductivity at lower temperatures (e.g. 300 K) is underestimated. However, the reliability and accuracy of the presented ‘easy to use’ estimation method seems to be much better than several other estimation methods. Furthermore the needed input for this method can provide information about which processing parameters should be optimised to obtain the highest thermal conductivity.     

Physical,thermal and ablative performance of CVI densified urethane-mimetic SiC preforms containing in situ grown Si3N4 whiskers

A two-step process has been developed for silicon carbide (SiC) coated polyurethane mimetic SiC preform containing silicon nitride (Si₃N₄) whiskers. SiC/Si₃N₄ preforms were prepared by pyrolysis/siliconization treatment at 1600 °C, of powder compacts containing rigid polyurethane, novolac and Si, forming a porous body with in situ grown Si₃N₄ whiskers. The properties were controlled by varying Si/C mole ratios such as 1–2.5. After densification using a chemical vapour infiltration, the resulting SiC/Si₃N₄/SiC composites showed excellent oxidation resistance, thermal conductivity of 4.32–6.62 Wm⁻¹ K⁻¹, ablation rate of 2.38 × 10⁻³ − 3.24 × 10⁻³ g cm⁻² s and a flexural strength 43.12–55.33 MPa for a final density of 1.39–1.62 gcm⁻³. The presence of a Si₃N₄ phase reduced the thermal expansion mismatch resulting in relatively small cracks and well-bonded layers even after ablation testing. This innovative two-step processing can provide opportunities for expanded design for using SiC/Si₃N₄/SiC composites being lightweight, inexpensive, homogeneous and isotropic for various high temperature applications.     

Diamond dispersed Si3N4 composites obtained by pulsed electric current sintering

30 vol.% 2 and 30 μm diamond dispersed Si₃N₄ matrix composites were prepared by pulsed electric current sintering (PECS) for 4 min at 100 MPa in the 1550–1750 °C range. The densification behaviour, microstructure, Si₃N₄ phase transformation and stiffness of the composites were assessed, as well as the thermal stability of the dispersed diamond phase. Monolithic Si₃N₄ with 4 wt% Al₂O₃ and 5 wt% Y₂O₃ sintering additives was fully densified at 1550 °C for 4 min and 60 MPa. The densification and α to β-Si₃N₄ transformation were substantially suppressed upon adding 30 vol.% diamond particles. Diamond graphitisation in the Si₃N₄ matrix was closely correlated to the sintering temperature and grit size. The dispersed coarse grained diamonds significantly improved the fracture toughness of the diamond composite, whereas the Vickers hardness was comparable to that of the Si₃N₄ matrix ceramic. The Elastic modulus measurements were found to be an excellent tool to assess diamond graphitisation in a Si₃N₄ matrix.     

Effect of Si addition on the mechanical and thermal properties of sintered reaction bonded silicon nitride

Advanced silicon nitride (Si₃N₄) ceramics were fabricated using a mixture of Si₃N₄ and silicon (Si) powders via conventional processing and sintering method. These Si₃N₄ ceramics with sintering additives of ZrO₂ + Gd₂O₃ + MgO were sintered at 1800 °C and 0.1 MPa in N₂ atmosphere for 2 h. The effects of added Si content on density, phases, microstructure, flexural strength, and thermal conductivity of the sintered Si₃N₄ samples were investigated in this study. The results showed that with the increase of Si content added, the density of the samples decreased from 3.39 g/cm³ to 2.92 g/cm³ except for the sample without initial Si₃N₄ powder addition, while the thermal diffusivity of the samples decreased slightly. This study suggested that addition of Si powder, which varied from 0 to 100%, in the starting materials might provide a promising route to fabricate cost-effective Si₃N₄ ceramics with a good combination of mechanical and thermal properties.     

Effect of lattice impurities on the thermal conductivity of β-Si3N4

Effect of impurities in the crystal lattice and microstructure on the thermal conductivity of sintered Si₃N₄ was investigated by the use of high-purity β-Si₃N₄ powder. The sintered materials were fabricated by gas pressure sintering at 1900 °C for 8 and 48 h with addition of 8 wt.% Y₂O₃ and 1 wt.% HFO₂. A chemical analysis was performed on the loose Si₃N₄ grains taken from sintered materials after the chemical treatment. Aluminum was not removed from Si₃N₄ grains, which originated from the raw powder of Si₃N₄. The coarse grains had fewer impurities than the fine grains. Oxygen was the major impurity in the grains, and gradually decreased during grain growth. The thermal conductivity increased from 88 Wm⁻¹ K⁻¹ (8 h) to 120 Wm⁻¹ K⁻¹ (48 h) as the impurities in the crystal lattice decreased. Purification by grain growth thus improved the thermal conductivity, but changing grain boundary phases might also influence the thermal conductivity.     

The preparation of silicon nitride ceramics by gelcasting and pressureless sintering

A new gelling system based on the polymerization of hydantion epoxy resin and 3,3′-Diaminodipropylamine (DPTA) was successfully developed for fabricating silicon nitride (Si₃N₄) ceramics. The effects of pH value, the dispersant content, solid volume fraction and hydantion epoxy resin amount on the rheological properties of the Si₃N₄ slurries were investigated. The relative density of green body obtained from the solid loading of 52 vol% Si₃N₄ slurry reached up to 62.7%. As the concentration of hydantion epoxy resin increased from 5 wt% to 20 wt%, the flexural strength of Si₃N₄ green body enhanced from 5.3 MPa to 31.6 MPa. After pressureless sintering at 1780 °C for 80 min, the sintered samples exhibited the unique interlocking microstructure of elongated β-Si₃N₄ grains, which was beneficial to improve the mechanical properties of Si₃N₄ ceramics. The relative density, flexural strength and fracture toughness of Si₃N₄ ceramics reached 97.8%, 687 MPa and 6.5 MPa m^1/2, respectively.     

Preparation and characterization of Si3N4-based composite ceramic tool materials by microwave sintering

Si₃N₄-based composite ceramic tool materials with (W,Ti)C as particle reinforced phase were fabricated by microwave sintering. The effects of the fraction of (W,Ti)C and sintering temperature on the mechanical properties, phase transformation and microstructure of Si₃N₄-based ceramics were investigated. The frictional characteristics of the microwave sintered Si₃N₄-based ceramics were also studied. The results showed that the (W,Ti)C would hinder the densification and phase transformation of Si₃N₄ ceramics, while it enhanced the aspect-ratio of β-Si₃N₄ which promoted the mechanical properties. The Si₃N₄-based composite ceramics reinforced by 15 wt% (W,Ti)C sintered at 1600 °C for 10 min by microwave sintering exhibited the optimum mechanical properties. Its relative density, Vickers hardness and fracture toughness were 95.73 ± 0.21%, 15.92 ± 0.09 GPa and 7.01 ± 0.14 MPa m^1/2, respectively. Compared to the monolithic Si₃N₄ ceramics by microwave sintering, the sintering temperature decreased 100 °C,the Vickers hardness and fracture toughness were enhanced by 6.7% and 8.9%, respectively. The friction coefficient and wear rate of the Si₃N₄/(W,Ti)C sliding against the bearing steel increased initially and then decreased with the increase of the mass fraction of (W,Ti)C., and the friction coefficient and wear rate reached the minimum value while the fraction of (W,Ti)C was 15 wt%.     

Structural,thermal and mechanical properties of aluminum nitride ceramics with CeO2 as a sintering aid

AlN ceramics have been prepared with CeO₂ as a sintering aid at a sintering temperature of 1900 °C. The effect of CeO₂ contents on the microstructure, density, thermal conductivity and hardness was investigated. Addition of CeO₂ exerted a significant effect on the densification of AlN ceramics and hence on the microstructure. Thermal conductivity of AlN ceramics increased with CeO₂ content and was greater than that of Y₂O₃-doped AlN ceramics at a similar sintering temperature. The resulting AlN ceramics with 1.50 wt% of CeO₂ had the highest relative density of 99.94%, thermal conductivity of 156 W m⁻¹ K⁻¹ and hardness of 72.46 kg/mm².     

Effect of the addition of β-Si3N4 nuclei on the thermal conductivity of β-Si3N4 ceramics

Various microstructures of β-Si₃N₄ were fabricated, with or without the addition of β-Si₃N₄ seed particles to high-purity β-Si₃N₄ powder, using Yb₂O₃ and ZrO₂ as sintering additives, by gas-pressure sintering at 1950 °C for 16 h. The thermal conductivity of the specimen without seeds was 140 W·(m·K)⁻¹, and the specimen exhibited a bimodal microstructure with abnormally grown grains. The thermal conductivity of the specimen with 24 vol.% seed addition was 143 W·(m·K)⁻¹, and this specimen had the bimodal microstructure with finer grain size than that without the seeded material, but maintained the same amount of large grains (⩾2 μm in diameter) as in the specimen without the seeds. This finding indicates that the thermal conductivity of β-Si₃N₄ is controlled by the amount of reprecipitated large grains, rather than by the grain size of the β-Si₃N₄.     

Synthesis of rod-like β-Si3N4 seed crystals with tailored morphology

β-Si₃N₄ seed crystals were synthesized by sintering (α+β)-Si₃N₄ powders with Y₂O₃+MgO additives at 1800 °C. Full α- to β-phase transformation was achievable at 1800 °C for 1 h. The pre-existing β-Si₃N₄ particles acted as nuclei during a sintering process. The length and mean aspect ratio of β-Si₃N₄ seed grains could be tailored by careful control of α/β-Si₃N₄ ratio, which resulted in various nuclei and driving force. The sample A95B5 with 5% β-nuclei shows a bimodal size distribution containing large amount of abnormal elongated β-Si₃N₄ grains with remarkable large diameter. With increasing the β-phase content from 5 wt% to 100 wt%, the average diameter and aspect ratio of the β-Si₃N₄ single crystals decreased from 1.43 µm to 0.92 µm and from 4.36 to 2.79, respectively.     

Effect of lattice defects on the thermal conductivity of β-Si3N4

Two types of β-Si₃N₄ were sintered at 1900 °C one for 8 h and the other for 36 h by using Yb₂O₃ and ZrO₂ as sintering additives. The latter specimen was further annealed at 1700 °C for 100 h to promote grain growth. The microstructures of the sintered materials were investigated by SEM, TEM, and EDS. The thermal conductivities of the specimens were 110 and 150 Wm⁻¹K⁻¹, respectively. The sintered material which possessed 110 Wm⁻¹K⁻¹ had numerous small precipitates that consisted of Yb, O and N elements and internal dislocations in the β-Si₃N₄ grains. In the sintered material with 150 Wm⁻¹K⁻¹ neither precipitates nor dislocations were observed in the grains. The microscopic evidence indicates that the improvement in the thermal conductivity of the β-Si₃N₄ was attributable to the reduction of internal defects of the β-Si₃N₄ grains with sintering and annealing time as the grains grew.