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The millimeter-wave power performance of a 75-μm×0.3-μm InP MISFET with SiO2 insulator is presented. The combination of high intrinsic transconductance (120 mS/mm), current density (1 A/mm), and gate-source and gate-drain breakdown voltages (35 V) led to a record power density of 1.8 W/mm and 20% power-added efficiency at 30 GHz. This power density is the highest ever reported for any three-terminal device at this frequency 相似文献
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Minko A. Hoel V. Morvan E. Grimbert B. Soltani A. Delos E. Ducatteau D. Gaquiere C. Theron D. De Jaeger J.C. Lahreche H. Wedzikowski L. Langer R. Bove P. 《Electron Device Letters, IEEE》2004,25(7):453-455
AlGaN-GaN high electron mobility transistors (HEMTs) on silicon substrate are fabricated. The device with a gate length of 0.3-/spl mu/m and a total gate periphery of 300 /spl mu/m, exhibits a maximum drain current density of 925 mA/mm at V/sub GS/=0 V and V/sub DS/=5 V with an extrinsic transconductance (g/sub m/) of about 250 mS/mm. At 10 GHz, an output power density of 1.9 W/mm associated to a power-added efficiency of 18% and a linear gain of 16 dB are achieved at a drain bias of 30 V. To our knowledge, these power results represent the highest output power density ever reported at this frequency on GaN HEMT grown on silicon substrates. 相似文献
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Hossein Elahipanah 《Microelectronics Journal》2011,42(2):299-304
In this paper, a very high gain 4H-SiC power MESFET with incorporation of L-gate and source field plate (LSFP-MESFET) structures for high power and RF applications is proposed. The influence of L-gate and source field plate structures on saturation current, breakdown voltage (Vb) and small-signal characteristics of the LSFP-MESFET was studied by numerical device simulation. The optimized results showed that Vb of the LSFP-MESFET is 91% larger than that of the 4H-SiC conventional MESFET (C-MESFET), which meanwhile maintains almost 77% higher saturation drain current characteristics. The maximum output power densities of 21.8 and 5.5 W/mm are obtained for the LSFP-MESFET and C-MESFET, respectively, which means about 4 times larger output power for the proposed device. Also, the cut-off frequency (fT) of 23.1 GHz and the maximum oscillation frequency (fmax) of 85.3 GHz for the 4H-SiC LSFP-MESFET are obtained compared to 9.4 and 36.2 GHz for that of the C-MESFET structure, respectively. The proposed LSFP-MESFET shows a new record maximum stable gain exceeding 22.7 dB at 3.1 GHz, which is 7.6 dB higher than that of the C-MESFET. To the best of our knowledge, this is 2.5 dB greater than the highest gain yet reported for SiC MESFETs, showing the potential of this device for high power RF applications. 相似文献
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Olsson J. Rorsman N. Vestling L. Fager C. Ankarcrona J. Zirath H. Eklund K.-H. 《Electron Device Letters, IEEE》2002,23(4):206-208
In this letter, we present state-of-the-art performance, in terms of output power density, for an RF-power LDMOS transistor. The novel device structure has a dual-layer RESURF of the drift region, which allows for a sub-μm channel length and a high breakdown voltage of 110 V. The output power density is more than 2 W/mm at 1 GHz and a VDS=70 V, with a stable gain of 23 dB at VDS=50 V. At 3.2 GHz the power density is over 1 W/mm at VDS=50 V and 0.6 W/mm at VDS=28 V. These results are to our knowledge the best ever for silicon power MOSFETs 相似文献
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The authors report the DC characteristics and RF performances of a 50×0.2-μm2 AlGaAs/InGaAs/GaAs pseudomorphic HEMT with a doped InGaAs channel. A transconductance as high as 760 mS/mm and a maximum current density of 800 mA/mm leads to a power density of 0.85 W/mm with 3.3-dB gain and 22.1% power-added efficiency at 55 GHz 相似文献
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《Electron Device Letters, IEEE》1986,7(11):638-639
The previously reported GaAs/AlGaAs heterojunction MISFET with an undoped AlGaAs layer as an insulator has been further optimized for power operation at upper Ku band. A 300-µm gate-width device generated 320 mW of output power with 33-percent efficiency at 18.5 GHz. The corresponding power density exceeds 1 W/mm. When optimized for efficiency, the device has achieved a power added efficiency of 43 percent at 19 GHz. 相似文献
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Hampson M.D. Shyh-Chiang Shen Schwindt R.S. Price R.K. Chowdhury U. Wong M.M. Ting Gang Zhu Dongwon Yoo Dupuis R.D. Milton Feng 《Electron Device Letters, IEEE》2004,25(5):238-240
Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface states that form traps, degrading RF performance. A passivation scheme utilizing a polyimide film as the passivating layer was developed to reduce the number of surface states and minimize RF dispersion. Continuous-wave power measurements were taken at 18 GHz on two-finger 0.23-/spl mu/m devices with 2/spl times/75 /spl mu/m total gate width before and after passivation yielding an increase from 2.14 W/mm to 4.02 W/mm in power density, and 12.5% to 24.47% in power added efficiency. Additionally, a 2/spl times/25 /spl mu/m device yielded a peak power density of 7.65 W/mm at 18 GHz. This data suggests that polyimide can be an effective passivation film for reducing surface states. 相似文献
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In this work, continuous wave Ka-band power performance of AlGaN-GaN high electron-mobility transistors grown on semi-insulating SiC substrates are reported. The devices, with gate lengths of 0.25 /spl mu/m, exhibited maximum drain current density of 1.1 A/mm and peak extrinsic transconductance of 285 mS/mm. At 35 GHz, an output power density of 4.13 W/mm with 23% of power-added efficiency (PAE) and 7.54 dB of linear gain were achieved at a drain bias of 30 V. These power results represent the best power density, PAE, and gain combination reported at this frequency. The drain bias dependence of the Ka-band power performance of these devices is also presented. 相似文献
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Henry H.G. Augustine G. DeSalvo G.C. Brooks R.C. Barron R.R. Oliver J.D. Jr. Morse A.W. Veasel B.W. Esker P.M. Clarke R.C. 《Electron Devices, IEEE Transactions on》2004,51(6):839-845
Previous efforts have revealed instabilities in standard SiC MESFET device electrical characteristics, which have been attributed to charged surface states. This work describes the use of an undoped "spacer" layer on top of a SiC MESFET to form a "buried-channel" structure where the active current carrying channel is removed from the surface. By using this approach, the induced surface traps are physically removed from the channel region, such that the depletion depth caused by the unneutralized surface states cannot reach the conductive channel. This results in minimal RF dispersion ("gate lag") and, thus, improved RF performance. Furthermore, the buried-channel approach provides for a relatively broad and uniform transconductance (G/sub m/) with gate bias (V/sub gs/), resulting in higher efficiency MESFETs with improved linearity and lower signal distortion. SiC MESFETs having 4.8-mm gate periphery were fabricated using this buried-channel structure and were measured to have an output power of 21 W (P/sub out//spl sim/4.4 W/mm), 62% power added efficiency, and 10.6 dB power gain at 3 GHz under pulse operation. When operated at continuous wave, similar 4.8-mm gate periphery SiC MESFETs produced 9.2 W output power (P/sub out//spl sim/2 W/mm), 40% PAE, and /spl sim/7 dB associated gain at 3 GHz. 相似文献
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A GaAs power MESFET has been optimized for Ka -Band operation. The device has an n+ ledge channel structure with a 0.25-μm gate on MBE-grown material. An output power density of 0.71 W/mm was achieved with 5.2-dB gain and 34% power-added efficiency. When tuned for maximum efficiency, a power-added efficiency of 41% was obtained with a power density of 0.61 W/mm and a gain of 5.6 dB 相似文献
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Ducatteau D. Minko A. Hoel V. Morvan E. Delos E. Grimbert B. Lahreche H. Bove P. Gaquiere C. De Jaeger J.C. Delage S. 《Electron Device Letters, IEEE》2006,27(1):7-9
Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum dc current density of 1 A/mm and an extrinsic current gain cutoff frequency (F/sub T/) of 50 GHz are achieved for a 0.25 /spl mu/m gate length device. Pulsed and large signal measurements show the good quality of the epilayer and the device processing. The trapping phenomena are minimized and consequently an output power density of 5.1 W/mm is reached at 18 GHz on a 2/spl times/50/spl times/0.25 /spl mu/m/sup 2/ HEMT with a power gain of 9.1dB. 相似文献
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Sriram S. Augustine G. Burk A.A. Glass R.C. Hobgood H.M. Orphanos P.A. Rowland L.B. Smith T.J. Brandt C.D. Driver M.C. Hopkins R.H. 《Electron Device Letters, IEEE》1996,17(7):369-371
We report for the first time the development of state-of-the-art SiC MESFETs on high-resistivity 4H-SiC substrates. 0.5 μm gate MESFETs in this material show a new record high fmax of 42 GHz and RF gain of 5.1 dB at 20 GHz. These devices also show simultaneously high drain current, and gate-drain breakdown voltage of 500 mA/mm, and 100 V, respectively showing their potential for RF power applications 相似文献
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介绍了一种频率为1.8GHz的低噪声放大器(LNA)的设计方案,采用TSMC 0.35μm CMOS工艺实现,增益为25dB,噪声系数2.56dB,功耗≤10mW,IIP3为-25dB或5dBm。 相似文献
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基于自主研发的碳化硅(SiC)材料外延技术,优化了材料各层结构及参数,减小了Al记忆效应,最终得到了高质量SiC外延片。采用自主研发成熟的SiC MESFET工艺平台,制作了多凹栅器件结构,优化了凹槽尺寸,采用细栅制作技术完成了栅电极制作,最终得到了不同栅宽的SiC MESFET芯片。突破了大栅宽芯片流片、封装及大功率脉冲测试技术,研制成功了微波功率特性良好的MESFET器件。微波测试结果表明,在2 GHz脉冲条件下,0.25 mm栅宽器件,输出功率密度达到8.96 W/mm,功率附加效率达到30%。单胞20 mm大栅宽器件,3.4 GHz脉冲条件下,功率输出达到94 W,功率附加效率达到22.4%。 相似文献