Magnetopolaritons in ZnTe

From an invariant expansion, we construct the exciton Hamiltonian for the Γ₆×Γ₈ excitons in theT _d -type material ZnTe represented by an 8×8 matrix including the influences of a finite wave vector and an external magnetic field. We diagonalize the Hamiltonian matrix to obtain the exciton states. Then the excitons are coupled to the electromagnetic radiation field thus giving the polariton states. The theoretical dispersion curves are fitted to the results of two-photon Raman scattering and reflection experiments in magnetic fields up to 22 T. From this fit we deduce precise values for the eigenergies, exciton masses,g-factors, and diamagnetic shifts.     

Spin interactions in a quantum ring containing a magnetic impurity

The exciton states in a CdTe semiconductor quantum ring containing a single magnetic impurity are considered in an external magnetic field. The electron-hole spin interaction and s,p-d interactions between electron, hole and magnetic impurity are also taken into account in the calculations. It is shown that due to the s,p-d spin interactions the ground state exciton energy splits into 12 doubly degenerated energy levels. The external magnetic field removes this degeneracy. A novel method is proposed here to determine the values of the strengths of s,p-d interactions. The optical spectrum of the system for different polarizations of the incident light and for different initial states of the magnetic impurity spin projection is also studied.     

Magneto-reflectance of the 1S exciton ground states in InP and GaAs

The reflectance due to the 1S exciton of InP and GaAs is studied in magnetic fields up to 12 T in the Faraday and Voigt configurations. Electron-hole exchange interaction is taken into account in a perturbation model on degenerate exciton states in cubic crystals to explain the splitting and the field dependence of the oscillator strengths of the J = 1 and J = 2 exciton states. Electron and hole g-values are estimated.     

Exciton spectra of semiconductor superlattices in a parallel magnetic field

Low-temperature photoluminescence and photoluminescence excitation spectra of GaAs/AlGaAs semiconductor superlattices having different potential barrier widths (b=20, 30, 50, and 200 Å), i.e., degrees of tunnel coupling between quantum wells, are studied in magnetic fields up to 5 T oriented parallel and perpendicular to the layers of the structure. The changes in the qualitative character of the photoluminescence excitation spectra observed in a parallel magnetic field with increasing tunnel transparency of the barrier correspond to a transition from a quasi-two-dimensional to a quasi-three-dimensional electronic spectrum as a miniband develops in the superlattice. In the photoluminescence excitation spectra of the superlattice with b=50 Å, as the parallel magnetic field is increased, a new line appears in the violet wing of the spatially indirect exciton excitation line, which is absent in a perpendicular field. A similar line was also observed to arise in the photoluminescence spectra. It is shown that the indirect exciton luminescence line can be suppressed by both parallel and perpendicular magnetic fields.     

Analytical Ground-State of an Exciton Trapped in a Circular Parabolic Quantum Dot in the Presence of a Magnetic Field

The quasi-exact properties of an exciton are investigated theoretically in the presence of an external magnetic field using the effective-mass approach in GaAs parabolic quantum dot. The energy spectrum is obtained analytically as a function of the dot radius, interaction strength and magnetic field. It is established that, a steady bound state of an exciton in the ground state exists under the effect of a strong magnetic field; also I noticed that the exciton binding energy decreases by increasing both the radius of the dot and the magnetic field strength and the reduction becomes pronounced for larger dots. As expected, it has been found that the exciton total energy decreases with increasing the size of the dot and it enhances by increasing the magnetic field. It appears that the exciton total energy strongly depends on the magnetic field for dots with big size. The magnetic field effect on the exciton size also has been studied. It is shown that the increase in the magnetic field leads to a reduction in the exciton size; due to magnetic field confinement, while the size of an exciton reach its bulk limit as the dot size increases. Moreover, it is shown that, if the dot radius is sufficiently large the oscillator strength saturates and it becomes insensitive to the magnetic field while the increase in the magnetic field gradually weakened the oscillator strength. I have calculated the ground-state distribution for both the electron and the hole. It is found that the localization of the electron/hole increases in the presence of a magnetic field. Moreover, the ground-state optical-absorption intensity is investigated. Finally, the dependence of the lowest five states of an exciton on both the dot radius and the magnetic field are discussed.

     

Edge excitons in a 2D topological insulator in a magnetic field

Exciton edge states and the microwave edge exciton absorption of a 2D topological insulator subject to the in-plane magnetic field are studied. The magnetic field forms a narrow gap in electron edge states that allows the existence of edge exciton. The exciton binding energy is found to be much smaller than the energy of a 1D Coulomb state. Phototransitions exist on the exciton states with even numbers, while odd exciton states are dark.     

Influence of magnetic field on exciton luminescence

The magnetic field dependence of the exciton emission intensity I_ex(H) has been investigated in Ge crystals stressed along the direction near 〈100〉. In the low field limit the magnetic field correction has been evaluated to the wave functions of the ground and some excited states of an isotropic exciton. The calculated dependence I_ex(H) in the case of Ge is in a good agreement with the experimental one at H ? 0.5 T.     

An exciton in a quantum well in the presence of crossed electric and magnetic fields

An analytical approach to the problem of the Wannier–Mott exciton in a semiconductor quantum well (QW) in the presence of external magnetic and electric fields is developed. The magnetic field is taken to lie in the heteroplanes while the electric field is directed perpendicular to the heteroplanes. Explicit dependencies of the energy levels and wave-functions of the exciton on the magnitudes of the fields for a wide range of the width of the QW are obtained. For the narrow QW, the results are valid for arbitrary electron and hole effective masses. In the case of intermediate and wide QWs, the adiabatic approximation implying the extreme difference of the electron and hole masses is used. In the intermediate QW, the states of the relative motion are the standard Coulomb states affected by the external fields while the states of the centre of mass are the size-quantized states in the QW. We focus particularly on the delocalized states caused by the external electric field and the motion of the excitons centre of mass in the magnetic field. These states are localized far away from the Coulomb centre. A strong influence of the boundaries of the wide QW on the delocalized exciton states is found to occur. Estimates of the expected values are made using typical parameters associated with GaAs QW.     

Influence of Magnetic Confinement on the Yellow Excitons in Cuprous Oxide Subject to an Electric Field

We study the spectrum of the yellow exciton series in crossed electric and magnetic fields. The electric field, applied along the optical axis, tilts the Coulomb potential between electron and hole, so that at sufficiently high fields exciton dissociation becomes possible, roughly when the electric dipole interaction energy exceeds the binding energy of an exciton state with principal quantum number n. For an applied voltage of U = 20 V all excitons above n = 6 are dissociated. Additional application of a magnetic field normal to the optical axis introduces magnetic confinement, due to which above a threshold field strength around B = 2.5 T the exciton lines re-emerge. The complex dispersion with increasing fields suggests quantum chaotic behavior in this crossed field configuration, so that the search for exceptional points may be promising.     

Energy Structure of an Individual Mn Acceptor in GaAs : Mn

The energy structure of the Mn acceptor, which is a complex of Mn²⁺ ion plus valence band hole, is investigated in the external magnetic field and under presence of an uniaxial stress has been studied. The spin-flip Raman spectra are studied under resonant excitation of exciton bound to the Mn acceptor. The gfactors of the ground F = 1 and the first excited F = 2 states are determined and selection rules for the optical transitions between the acceptor states are described. The value of the random field (stress or electric field) acting on manganese acceptor and the deformation potential for the exchange interaction constant of the Mn²⁺ + hole complex are obtained. A theoretical model is developed that takes into account the influence of random internal and uniaxial external stress and magnetic field. The proposed model describes well the lines of spin-flip Raman scattering of Mn acceptor.     

Evidence for dark excitons in a single carbon nanotube due to the Aharonov-Bohm effect

We studied exciton structures and the Aharonov-Bohm effect in a single carbon nanotube using micro-photoluminescence (PL) spectroscopy under a magnetic field at low temperatures. A single sharp PL peak from the bright exciton state of a single carbon nanotube was observed under zero magnetic field, and the additional PL of dark exciton state appeared below the bright exciton peak under high magnetic fields. It was found that the split between the bright and dark exciton states is several millielectron volts at zero field. The tube diameter dependence of the splitting arises from the intervalley short-range Coulomb interaction.     

Time-resolved studies of single quantum dots in magnetic fields

We present time-resolved and time-integrated spectroscopy of single InAs quantum dots grown in a GaAs matrix. We observe a number of interesting features in the spectra, including the zero field splitting of exciton and biexciton lines due to quantum dot asymmetry. By the application of an in-plane magnetic field, the normally optically active and inactive exciton states become mixed, enabling us to optically probe the normally inaccessible ‘dark’ states. Time resolved measurements on the mixed states show decay times several times longer than the exciton lifetime at zero field, which we show to be consistent with a dark exciton lifetime orders of magnitude longer than that for bright exciton.     

Fine structure of excitons in self-assembled In0.60Ga0.40As quantum dots: Zeeman-interaction and exchange energy enhancement

The fine structure of the ground state exciton has been studied by magnetophotoluminescence spectroscopy of self-assembled In_0.60Ga_0.40As single quantum dots. This was realized by using lithography for fabricating mesa structures which contain only a single dot. Due to a dot geometry-induced symmetry breaking we are able to observe the dark exciton states in magnetic field besides the bright excitons. From the spin-splitting data values for the corresponding exciton g-factors are obtained. In addition, the electron–hole exchange energies are determined, which are compared to detailed numerical calculations.     

Multiband calculation of exciton diamagnetic shift in InP/InGaP self-assembled quantum dots

Exciton states in self-assembled InP/In_0.49Ga_0.51P quantum dots subject to magnetic fields up to 50 T are calculated. Strain and band mixing are explicitly taken into account in the single-particle models of the electronic structure, while an exact diagonalization approach is adopted to compute the exciton states. Reasonably good agreement with magneto-photoluminescence measurements on InP self-assembled quantum dots is found. As a result of the polarization and angular momentum sensitive selection rules, the exciton ground state is dark. For in-plane polarized light, the magnetic field barely affects the exciton spatial localization, and consequently the exciton oscillator strength for recombination increases only slightly with increasing field. For z polarized light, a sharp increase of the oscillator strength beyond 30 T is found which is attributed to the enhanced s character of the relevant portion of the exciton wave function.     

Splitting Phenomenon Induced by Magnetic Field in Metallic Carbon Nanotubes

In the framework of the tight-binding model,the excitons states and linear absorption spectra are calculated in the metallic single-walled carbon nanotubes,with the axial magnetic field applied.From our calculations,it is found that for the M_(11) and M_(22) transitions,the exciton states are split into four separate column states by the applied magnetic field due to the symmetry breaking.More interesting is that the splitting can be directly reflected from the linear absorption spectra,which are dominated by four main absorption peaks.In addition,the splitting with increasing the axial magnetic field is also calculated,which increases linearly with the applied magnetic field.The obtained results are expected to be detected by the future experiments.     

Exciton and magneto-absorption in tellurium

Infrared magneto-absorption has been investigated in tellurium crystals in magnetic fields up to 45 koe at liquid helium temperatures. When the magnetic field was applied parallel or perpendicular to the c-axis, oscillatory absorptions with many transmission minima involving the exciton absorption were observed. The results were analysed taking into account the complicated structure of the valence band.     

Landau-Level Quantization of the Yellow Excitons in Cuprous Oxide

Lately, the yellow series of P-excitons in cuprous oxide could be resolved up to the principal quantum number n = 25. Adding a magnetic field, leads to additional confinement normal to the field. Thereby, the transition associated with the exciton n is transformed into the transition between the electron and hole Landau levels with quantum number n, once the associated magnetic length becomes smaller than the related exciton Bohr radius. The magnetic field of this transition scales roughly as n^–3. As a consequence of the extended exciton series, we are able to observe Landau level transitions with unprecedented high quantum numbers of more than 75.     

Morphology effects of self-assembled quantum dots on the energy spectrum of magneto-excitons

In this paper we analyze the changes experienced by the energy spectra of a confined exciton in type II semiconductor quantum dots, considering the quantum dot as a possible functional part that, in the future devices, can be applied in spintronics, optoelectronics, and quantum information technologies. We studied the lowest energy states of an exciton (X) confined in type II InP/GaInP self-assembled quantum dot (SAQDs), with axial symmetry in the presence of a uniformly applied magnetic field in the growth direction. In our model, it is considered that the electron is located within the point of InP and the hole is in the GaInP barrier. The solution of the Schrödinger equation for this system is obtained by a variational separation process of variables in the adiabatic approximation limit and within the effective mass approximation. We study the energy levels associated with the electron and the hole, and the energy of the exciton. Due to the axial symmetry of the problem the z component of the total orbital angular momentum, L_z=l_e+l_h, is preserved and the exciton states are classified according to the values of this component. Quantum dots have a finite and variable thickness, with the purpose of analyzing the effects related to the variation of the morphology and the presence of a wet layer.     

Energy values for the H+2 ion in superstrong magnetic fields using the adiabatic approximation

Energy values, equilibrium internuclear separations, and zero-point energies of nuclear vibrations parallel to the magnetic field are calculated for the lowest states of the H⁺₂ ion in magnetic fields B?10⁶ T (characteristic of neutron stars) using numerical wave functions that are products of Landau states and arbitrary z-dependent functions, thus improving on previous estimates of variational or LCAO type, which have been obtained in the high-field regime.     

Exciton dynamics in ZnCdSe/ZnSe quantum-well structures

Exciton dynamics in ZnCdSe/ZnSe quantum-well structures have been studied from luminescence spectra obtained at T=2 K. The energy and phase relaxation times of localized exciton states have been determined from a study of the destruction of exciton optical alignment by an external magnetic field and direct measurements of the polarized-radiation decay kinetics in the picosecond range. The exciton polarization lifetimes measured by two independent techniques are found to be in a good agreement. Fiz. Tverd. Tela (St. Petersburg) 40, 809–810 (May 1998)