低温退火对稀磁半导体(Ga,Mn)As性质的影响

利用低温分子束外延技术在GaAs(001)上外延生长出厚度为500nm的稀磁半导体(Ga,Mn)As薄膜.双晶X射线衍射证明其为闪锌矿结构,晶格参数为0.5683nm,据此推导出其Mn含量为7%.磁测量结果揭示其铁磁转变温度为65K.观察了低温退火处理对(Ga,Mn)As磁性质的影响,发现生长后退火处理显著提高了其铁磁转变温度,可以达到115K.     

低温退火对稀磁半导体(Ga,Mn)As性质的影响

利用低温分子束外延技术在GaAs(001)上外延生长出厚度为500nm的稀磁半导体(Ga,Mn)As薄膜. 双晶X射线衍射证明其为闪锌矿结构，晶格参数为0.5683nm，据此推导出其Mn含量为7%. 磁测量结果揭示其铁磁转变温度为65K. 观察了低温退火处理对(Ga,Mn)As磁性质的影响，发现生长后退火处理显著提高了其铁磁转变温度，可以达到115K.     

基于GaAs的新型稀磁半导体材料(Ga,Mn)As

介绍了一种基于 Ga As的新型稀磁半导体材料 ( Ga,Mn) As,包括 ( Ga,Mn) As的制备方法、结构特性、磁性质及磁输运性质。最后 ,展望了 ( Ga,Mn) As的应用前景     

基于GaAs的新型稀磁半导体材料（Ga,Mn）As

介绍了一种基于GaAs的新型稀磁半导体材料（Ga,Mn）As,包括（Ga,Mn）As的制备方法、结构特性、磁性质及磁输运性质。最后,展望了(Ga,Mn）As的应用前景。     

稀磁半导体(Ga1-xFex)As的磁性及稳定性

运用第一性原理下的LMTO-ASA方法研究稀磁半导体(Ga1-xFe x )As( x ＝1,1/2,1/4和1/8)的电子结构、磁性及其稳定性.计算了Fe掺杂浓度的变化对(Ga1-xFe x )As的磁性及稳定性的影响.     

Cr掺杂InAs自组织量子点的分子束外延生长及磁性质

利用低温分子束外延技术制备了Cr掺杂的InAs铁磁性自组织量子点.高分辨电子显微镜分析表明InAs:Cr量子点保持了较好的闪锌矿结构.超导量子干涉仪磁性测量表明InAs:Cr自组织量子点的铁磁转变温度超过400K.     

Cr掺杂InAs自组织量子点的分子束外延生长及磁性质

利用低温分子束外延技术制备了Cr掺杂的InAs铁磁性自组织量子点.高分辨电子显微镜分析表明InAsCr量子点保持了较好的闪锌矿结构.超导量子干涉仪磁性测量表明InAsCr自组织量子点的铁磁转变温度超过400K.     

稀磁半导体(Ga_(1-x)Fe_x)As的磁性及稳定性

运用第一性原理下的LMTO-ASA方法研究稀磁半导体(Ga1-xFex)As(x=1,1/2,1/4和1/8)的电子结构、磁性及其稳定性.计算了Fe掺杂浓度的变化对(Ga1-xFex)As的磁性及稳定性的影响.     

稀磁半导体制备方法的研究进展

稀磁半导体(DMS)是一种新型功能材料,其结合了半导体和磁性材料的电学和磁学性质,具有优异的磁、磁光和磁电等性能,在未来的光电器件、自旋电子器件和计算机等领域具有广阔的开发应用前景。简述了我国稀磁半导体的研究成果及进展,重点讨论了稀磁半导体的制备合成方法,分析了各种制备方法的优缺点,包括分子束外延技术(MBE)、离子注入法、脉冲激光沉积(PLD)、助熔剂法、化学气相沉积(CVD)、溶胶-凝胶和水热法等。同时分析了目前稀磁半导体遇到的问题和困难,探讨了其解决方法,展望了稀磁半导体潜在的应用前景。     

(Ga,Mn,As)/GaAs的发光谱

利用低能双离子束外延技术 ,在 4 0 0℃条件下生长样品 (Ga,Mn,As) / Ga As.样品光致发光谱出现三个峰 ,即1.5 0 4 2 e V处的 Ga As激子峰、1.4 875 e V处的弱碳峰和低能侧的一宽发光带 .宽发光带的中心位置在 1.35 e V附近 ,半宽约 0 .1e V.在 84 0℃条件下对样品进行退火处理 ,退火后的谱结构类似退火前 ,但激子峰和碳杂质峰的峰位分别移至 1.5 0 6 5 e V和 1.4 894 e V,同时低能侧的宽发光带的强度大大增加 .这一宽发射带的来源还不清楚 ,原因可能是体内杂质和缺陷形成杂质带 ,生成 Mn2 As新相 ,Mn占 Ga位或形成 Ga Mn As合金     

(Ga,Mn,As)/GaAs的发光谱

利用低能双离子束外延技术,在400℃条件下生长样品(Ga,Mn,As)/GaAs.样品光致发光谱出现三个峰,即1.5042eV处的GaAs激子峰、1.4875eV处的弱碳峰和低能侧的一宽发光带.宽发光带的中心位置在1.35eV附近,半宽约0.1eV.在840℃条件下对样品进行退火处理,退火后的谱结构类似退火前,但激子峰和碳杂质峰的峰位分别移至1.5065eV和1.4894eV,同时低能侧的宽发光带的强度大大增加.这一宽发射带的来源还不清楚,原因可能是体内杂质和缺陷形成杂质带,生成Mn2As新相,Mn占Ga位或形成GaMnAs合金.     

Ion-Implantation Control of Ferromagnetism in (Ga,Mn)As Epitaxial Layers

Epitaxial layers of (Ga,Mn)As ferromagnetic semiconductor have been subjected to low-energy ion implantation by applying a very low fluence of either chemically active, oxygen ions or inactive ions of neon noble gas. Several complementary characterization techniques have been used with the aim of studying the effect of ion implantation on the layer properties. Investigation of their electrical and magnetic properties revealed that implantation with either O or Ne ions completely suppressed both the conductivity and ferromagnetism in the layers. On the other hand, Raman spectroscopy measurements evidenced that O ion implantation influenced optical properties of the layers noticeably stronger than did Ne ion implantation. Moreover, structural modifications of the layers caused by ion implantation were investigated using high-resolution x-ray diffraction technique. A mechanism responsible for ion-implantation-induced suppression of the conductivity and ferromagnetism in (Ga,Mn)As layers, which could be applied as a method for tailoring nanostructures in the layers, is discussed in terms of defects created in the layers by the two implanted elements.     

(Ga,Mn,As)/GaAs的发光谱

利用低能双离子束外延技术,在400℃条件下生长样品(Ga,Mn,As)/GaAs.样品光致发光谱出现三个峰,即1.5042eV处的GaAs激子峰、1.4875eV处的弱碳峰和低能侧的一宽发光带.宽发光带的中心位置在1.35eV附近,半宽约0.1eV.在840℃条件下对样品进行退火处理,退火后的谱结构类似退火前,但激子峰和碳杂质峰的峰位分别移至1.5065eV和1.4894eV,同时低能侧的宽发光带的强度大大增加.这一宽发射带的来源还不清楚,原因可能是体内杂质和缺陷形成杂质带,生成Mn2As新相,Mn占Ga位或形成GaMnAs合金.     

Interlayer exchange coupling in (Ga,Mn)As ferromagnetic semiconductor multilayer systems

This paper describes interlayer exchange coupling (IEC) phenomena in ferromagnetic multilayer structures, focusing on the unique IEC features observed in ferromagnetic semiconductor (Ga,Mn)As-based systems. The dependence of IEC on the structural parameters, such as non-magnetic spacer thickness, number of magnetic layers, and carrier density in the systems has been investigated by using magnetotransport measurements. The samples in the series show both a typical anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR)-like effects indicating realization of both ferromagnetic (FM) and antiferromagnetic (AFM) IEC in (Ga,Mn)As-based multilayer structures. The results revealed that the presence of carriers in the non-magnetic spacer is an important factor to realize AFM IEC in this system. The studies further reveal that the IEC occurs over a much longer distance than predicted by current theories, strongly suggesting that the IEC in (Ga,Mn)As-based multilayers is a long-range interaction. Due to the long-range nature of IEC in the (Ga,Mn)As-based systems, the next nearest neighbor (NNN) IEC cannot be ignored and results in multi-step transitions during magnetization reversal that correspond to diverse spin configurations in the system. The strength of NNN IEC was experimentally determined by measuring minor loops that correspond to magnetization flips in specific (Ga,Mn)As layer in the multilayer system.     

Study of the electrical properties of individual (Ga,Mn)As nanowires

Arrays of (Ga, Mn)As nanowire crystals are synthesized by molecular-beam epitaxy. Electronbeam lithography made possible the fabrication of electric contacts to individual nanowires. The influence of the annealing temperature on the properties of the contacts is studied. The optical annealing temperature is determined to be 160°C. It is found that an increase in the annealing temperature yields structure degradation. From studies of the current-voltage characteristics of the individual nanowire structures, a number of their electrical parameters, such as the resistivity and the mobility of charge carriers are determined.     

Submicron p-channel (Al,Ga)As/(In,Ga)As HIGFETs

Submicron p-channel (Al,Ga)As/(In,Ga)As HIGFETs have been optimized for application to high-performance complementary GaAs circuits. Major issues with submicron and deep submicron (L_g⩽0.5-μm) P-channel HIGFETs have been the severe short-channel effects, such as high subthreshold leakage currents and high output conductances. With optimization of the p-type self-aligned implant schedule, control of impurity contamination at the substrate/buffer interfaces and increase of the resistivity of the unintentionally-doped GaAs buffers, high-performance submicron devices have been realized. Typically, 0.5-μm P-HIGFETs yielded room temperature transconductances of 90 mS/mm, drain currents at V_gs =V_ds=-1.5 V of 63 mA/mm, and subthreshold leakage currents near 1 nA. Subthreshold slope of 90 mV/decade and output conductances under 5 mS/mm were realized     

High-performance self-aligned (Al,Ga)As/(In,Ga)As pseudomorphicHIGFETs

Transconductance as high as 676 mS/mm at 300 K was observed to 0.7×10-μm² n-channel devices (HIGFETs) made on epilayers with Al_0.3Ga_0.7As insulator thickness of 200 Å and In_0.15Ga_0.85As channel thickness of 150 Å. An FET K value (K=W_g Uε/2aL_g) as large as 10.6 mA/V ² was also measured from another device with transconductance of 411 mS/mm. The high K values are achieved under normal FET operation without hole-injection or drain-avalanche breakdown effects. These results demonstrate the promise of pseudomorphic (Al,Ga)As/(In,Ga)As HIGFETs for high-performance circuit applications