Electromigration of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite flip–chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy

We examine electromigration fatigue reliability and morphological patterns of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite solder bumps in a flip–chip package assembly with Ti/Ni(V)/Cu UBM. The flip–chip test vehicle was subjected to test conditions of five combinations of applied electric currents and ambient temperatures, namely, 0.4 A/150 °C, 0.5 A/150 °C, 0.6 A/125 °C, 0.6 A/135 °C, and 0.6 A/150 °C. The electrothermal coupling analysis was employed to investigate the current crowding effect and maximum temperature in the solder bump in order to correlate with the experimental electromigration reliability using the Black’s equation as a reliability model. From available electromigration reliability models, we also present a comparison between fatigue lives of Sn–37Pb solder bumps with Ti/Ni(V)/Cu and those with Al/Ni(V)/Cu UBM under different current stressing conditions.     

Fatigue Crack Propagation Behavior of Sn–Ag–Cu Solder Interconnects

Lead-free solders are replacing traditional lead-rich solders in the electronic industry. In the present study, the fatigue crack growth behavior of Sn–Ag–Cu solder interconnect has been investigated. An approach based on phase transformation theory and fracture mechanics was applied to predict fatigue crack propagation in a Sn–Ag–Cu interconnect, which consists of solder and intermetallic layers. Fatigue experiments were carried out on plastic ball grid array (PBGA) solder interconnects, different fatigue crack growth phases in interconnects were observed in the experiments. Displacement-controlled shear fatigue was done with a simple strain range from 0.01 to 0.1 (0.005 $mu$ m to 0.050 $mu$ m displacement) and cycle frequency of 0.1 Hz. It is found in the experiment that the majority of the interconnect lifetime is contained at the crack nucleation and early crack growth stage. Since solder alloys operate at high homologous temperatures, usually above 50% of their melting temperatures, combined creep and plasticity effects play important roles in interconnect failure and need to be considered in the analysis. A finite-element analysis was conducted to predict the required energy $U$ to increase the crack by a unit area. Unified creep-plasticity theory was incorporated in the model to predict the creep and hysteresis effects on fatigue crack propagation in solder. The fatigue crack propagation rate in a Sn–Ag–Cu solder was predicted using phase transformation theory. Reasonable agreement between theoretical predictions and experimental results was obtained.      

Sn–Ag–Cu Soldering Reliability as Influenced by Process Atmosphere

To develop an optimal surface mount reflow soldering process with Sn–Ag–Cu, the influences of atmosphere and cooling speed on soldering reliability have been examined by using Sn plated chip components and of Pd plated small outline packages (SOPs) on a printed circuit board (PCB). Typical three Sn–Ag–Cu alloy pastes, i.e., Sn–3.0wt%Ag–0.5wt%Cu, Sn–3.8wt%Ag–0.75wt%Cu, and Sn–4.0wt%Ag–0.9wt%Cu, were used for reflow soldering in air or ${hbox {N}} _{2}$ atmospheres. In the case of chip component joints, the solder compositions, cooling speed, and atmospheres during reflow treatment slightly affect the dendritic microstructure of the solder fillets. In contrast, these parameters rarely affect the solder wettability both on boards/components and shear strengths of the solder joints. In the case of the SOP joints, however, the atmospheres in reflow treatment and the fluxes strongly affect the appearances of solder fillet surfaces structure. Despite the types of solder fluxes, ${hbox {N}} _{2}$ process atmosphere obviously improved wettability of the solders on the lead-frames of the SOP. Moreover, the scatter in shear strengths becomes smaller and the wetting of solders on the lead-frames becomes stabler in ${hbox {N}} _{2}$ atmosphere than in air atmosphere.      

Studies on solder bump electromigration in Cu/Sn–3Ag–0.5Cu/Cu system

This paper aims to understand the solder bump electromigration phenomenon in the Cu/Sn–3Ag–0.5Cu/Cu system. A temperature of 453 K with a current density of 10 kA/cm² was applied. A void nucleated at the highest current density point at the cathode. As the void grew along the cathode side, a solder depletion occurred on the opposite side of the electron entry point, resulting in an open failure. A unique purposely-designed 3D model simulation methodology provides a good understanding of the void nucleation and growth behavior. The temperature of the solder joint during the electromigration test was measured successfully by the resistance change in the junction line between the two joints.     

Reliability study of Sn–Ag–Cu–Ce soldered joints in quad flat packages

The reliability of Sn–Ag–Cu–Ce lead-free soldered joints in quad flat packages under thermal cycling was investigated based on finite element simulation and experiments. The stress and strain response of fine pitch QFP device lead-free soldered joints were analyzed using finite element method based on Garofalo–Arrhenius model. The simulated results indicate that the creep distribution is not uniform, the heel of joints is the maximum creep strain concentrated sites. And comparisons were then made with experimental results of the cracks observed in the Sn–Ag–Cu–Ce soldered joints subjected to the temperature cycled experiment. In addition, the relative mechanical and metallurgical factors, which dominate the failure of soldered joints, were utilized to analyze the phenomena. The fracture surfaces indicate that crack initiate and propagate along the interface among bulk Cu₆Sn₅ phases in Sn–Ag–Cu–Ce soldered joints.     

Intermetallic Formation of Copper Pillar With Sn–Ag–Cu for Flip-Chip-On-Module Packaging

Copper pillar interconnects are a popular interposing option due to the advantages of small pillar size and good thermal and electrical performance, making copper pillar interconnects very useful for high-frequency and high-density flip-chip-on-module (FCOM) packages. However, the challenges associated with the technology include controlling the formation of brittle intermetallic compounds (IMC) and weak interfaces during heat-related processes, and preventing copper migration during bonding and reliability testing. As the reliability of the joint is significantly affected by the property of the surface finish, it is important to understand the influence of different surface finishes on the reliability of copper pillar interconnections. This paper focuses on Ni/Au-capped, Sn-capped, Sn–2.5Ag-capped, and organic solderability preservative (OSP)-capped copper pillar interconnections with lead-free Sn–3.0Ag–0.5Cu solder paste in FCOM packages. The types, morphology, and distribution of IMC formed in the bulk solder, the copper pillar/SAC, and copper pad/ENIG/SAC interfaces during multiple reflows ( 265 $~^{circ}{hbox {C}}$ ) and reliability testing [thermal cycle (TC), autoclave (AC), high-temperature storage (HTS), and thermal shock ([TS)] were investigated using a scanning electron microscope with energy dispersive X-ray (SEM-EDX). The feasibility and reliability of these copper-pillar FCOM systems were also compared and evaluated. The reliability results show that OSP-capped copper pillar interconnects are the best interposing option in terms of reliability and performance.      

Creep behaviour of Sn–3.8Ag–0.7Cu under the effect of electromigration: Experiments and modelling

In this paper, creep behaviour of Sn-3.8Ag-0.7Cu (SAC) lead-free solder under the collective effect of electromigration, stress and temperature was investigated. Firstly, the conventional creep test was improved so that high current density can be applied to the ribbon sample and serve as one of the experimental control variables. Experimental results indicate that creep rate of the SAC was greatly affected by electromigration (EM) and its linear dependence on current density and stress was revealed. Then a unified phenomenological creep model with variables of stress, temperature and current density was set up based on the fact that both the mechanisms of conventional creep and electromigration are vacancy diffusion type. Coefficients in the unified creep model were determined from the experimental results by curve fitting, and numerical results of the unified creep model are found to fit the experimental results quite well.     

Microstructure evolution of the Sn–Ag–y%Cu interconnect

The lead free Sn–Ag–y%Cu (y = 0.0, 0.5, 1.0 and 2.0) interconnect interfacial microstructures and the microstructure evolution under thermal treatment (isothermal aging, 150 °C/1000 h) were studied in detail by using surface microetching microscopy and cross section microscopy. The corresponding mechanical and reliability behaviors were evaluated by performing shear test and fracture mode analysis before and after the thermal treatment. The results indicate: (i) The interconnects could have different microstructures and intermetallic compound (IMC), depending on the Cu content. The Cu–Sn IMC could have microstructures that were clusters or protrusion-like, Augustine grass leaf-like, scissor-like, tweezers-like, etc. (ii) Ag₃Sn IMCs were not observed at time zero for any interconnect groups, but they occurred after the aging for all groups. The Ag₃Sn IMC could have different microstructures, again depending on Cu content. For low Cu content, the Ag₃Sn IMCs were granules or nodules; for higher Cu content, Ag₃Sn IMCs were plate-like. (iii) The growth of Ag₃Sn plates was promoted by the growth of Cu–Sn IMCs, but indirectly linked to the Cu content. (iv) High Cu content (1.0 wt% and higher) could degrade the mechanical and reliability performances of the LF interconnect by providing a brittle joint, which was mainly achieved through the substantial growth of Cu–Sn IMCs and Ag₃Sn plates.     

Properties of low temperature Sn–Ag–Bi–In solder systems

The metallurgical and mechanical properties of Sn–3.5 wt%Ag–0.5 wt%Bi–xwt%In (x = 0–16) alloys and of their joints during 85 °C/85% relative humidity (RH) exposure and heat cycle test (−40–125 °C) were evaluated by microstructure observation, high temperature X-ray diffraction analysis, shear and peeling tests. The exposure of Sn–Ag–Bi–In joints to 85 °C/85%RH for up to 1000 h promotes In–O formation along the free surfaces of the solder fillets. The 85°C/85%RH exposure, however, does not influence the joint strength for 1000 h. Comparing with Sn–Zn–Bi solders, Sn–Ag–Bi–In solders are much stable against moisture, i.e. even at 85 °C/85%RH. Sn–Ag–Bi–In alloys with middle In content show severe deformation under a heat cycles between −40 °C and 125 °C after 2500 cycles, due to the phase transformation from β-Sn to β-Sn + γ-InSn₄ or γ-InSn₄ at 125 °C. Even though such deformation, high joint strength can be maintained for 1000 heat cycles.     

Effect of displacement rate on ball shear properties for Sn–37Pb and Sn–3.5Ag BGA solder joints during isothermal aging

The interfacial reactions and ball shear properties of ball grid array (BGA) solder joints aged at 170 °C for up to 21 days were investigated with different displacement rates. Two different kinds of solders, Sn–37Pb and Sn–3.5Ag (all wt.%), and an electroplated Ni/Au BGA substrate were employed in this work. A continuous Ni₃Sn₄ intermetallic compound (IMC) layer was formed at the interfaces between both the Sn–37Pb and Sn–3.5Ag solders and the substrate during reflow. After aging, two different reaction layers, consisting of (Au_xNi_1−x)Sn₄ IMC and Pb-rich phase, were additionally observed between the Sn–37Pb solder and the Ni₃Sn₄ IMC layer. The thicknesses of these interfacial reaction layers increased with increasing aging time. After reflow, all the fractures occurred inside the bulk solder. The fracture location of the Sn–37Pb solder joints was shifted toward the solder/Ni interface with increasing aging time and displacement rate, whereas the fracture of the Sn–3.5Ag solder joints mainly occurred inside the bulk solder, irrespective of the aging time and displacement rate. Consequently, the shear properties of the Sn–37Pb solder joints significantly decreased with increasing aging time, whereas those of the Sn–3.5Ag solder joints slightly decreased. The tendency toward brittle fracture of the Sn–37Pb solder joints was intensified with increasing displacement rate. The shear properties of the ductile solder joints increased with increasing displacement rate, while the displacement until fracture, deformation energy and displacement rate sensitivity of the brittle solder joints significantly decreased with increasing displacement rate.     

An Embrittlement Mechanism of Impact Fracture of Sn–Ag–Cu Solder Joints on BGA Using Electroplated Ni/Au Surface Finishes

The impact toughness evaluation and fracture mechanism analysis in board level of Sn–3mass%Ag–0.5mass%Cu solder joints of ball grid arrays (BGAs) using electrolysis Ni/Au plating were performed. The cause of impact toughness degradation of BGA solder ball joints is the segregation of impurities to the (Cu, Ni)$_{6}$Sn$_{5}$ intermetallic compound grain boundary formed in the solder joints. The impurities, consisting of Cl and organic matters, are taken in the Ni plating film at the time of Ni plating. The organic matter impurities come primarily from the solder mask of the BGA interposer substrates. To improve the impact toughness of the Sn–3mass%Ag–0.5mass%Cu solder joint of the BGA, it is necessary to lower the concentration of these impurities. This, in turn, places importance on solder mask material selection (to minimize Ni plating bath contamination) as well as contamination prevention and plating bath sanitization.      

Evaluation of displacement rate effect in shear test of Sn–3Ag–0.5Cu solder bump for flip chip application

An experimental investigation was combined with a non-linear finite element analysis using an elastic–viscoplastic constitutive model to study the effect of ball shear speed on the shear forces of flip chip solder bumps. A solder composition used in this study was Sn–3mass%Ag–0.5mass%Cu. A low cost bumping process has been employed using electroless Ni and immersion Au followed by solder paste stencil printing. A thin layer of intermetallic compound, (Ni_1−xCu_x)₃Sn₄, was formed by the reaction between the solder and electroless Ni with a thickness of about 1.4 μm, while some discontinuous (Cu_1−yNi_y)₆Sn₅ particles were also formed at the interface. The compositions of the resulting compounds were identified using energy dispersive spectrometer (EDS) and electron microprobe analysis (EPMA). Shear tests were carried out over a shear speed range from 20 to 400 μm/s at a shear ram height of 20 μm. The shear force was observed to linearly increase with shear speed and reach the maximum value at the fastest shear speed in both experimental and computational results. The optimum shear speeds for the shear test of solder bumped flip chip were recommended to be not exceeding 200 μm/s. The failure mechanisms were discussed in terms of von Mises stresses and plastic strain energy density distributions.     

The influence of solder volume and pad area on Sn–3.8Ag–0.7Cu and Ni UBM reaction in reflow soldering and isothermal aging

This paper examines various aspects of SAC (Sn–3.8Ag–0.7Cu wt.%) solder and UBM interactions which may impact interconnection reliability as it scales down. With different solder joint sizes, the dissolution rate of UBM and IMC growth kinetics will be different. Solder bumps on 250, 80 and 40 μm diameter UBM pads were investigated. The effect of solder volume/pad metallization area (V/A) ratio on IMC growth and Ni dissolution was investigated during reflow soldering and solid state isothermal aging. Higher V/A ratio produced thinner and more fragmented IMC morphology in SAC solder/Ni UBM reflow soldering interfacial reaction. Lower V/A ratio produced better defined IMC layer at the Ni UBM interface. When the ratio of V/A is constant, the IMC morphology and growth trend was found to be similar. After 250 h of isothermal aging, the IMC growth rate of the different bump sizes leveled off. No degradation in shear strength was observed in these solder bump after 500 h of isothermal aging.     

High temperature reliability and interfacial reaction of eutectic Sn–0.7Cu/Ni solder joints during isothermal aging

The interfacial reactions and growth kinetics of intermetallic compound (IMC) layers formed between Sn–0.7Cu (wt.%) solder and Au/Ni/Cu substrate were investigated at aging temperatures of 185 and 200 °C for aging times of up to 60 days. After reflow, the IMC formed at the interface was (Cu, Ni)₆Sn₅. After aging at 185 °C for 3 days and at 200 °C for 1 day, two IMCs of (Cu, Ni)₆Sn₅ and (Ni, Cu)₃Sn₄ were observed. The growth of the (Ni, Cu)₃Sn₄ IMC consumed the (Cu, Ni)₆Sn₅ IMC at an aging temperature of 200 °C due to the restriction of supply of Cu atoms from the solder to interface. After aging at 200 °C for 60 days, the Ni layer of the substrate was completely consumed in many parts of the sample, at which point a Cu₃Sn IMC was formed. In the ball shear test, the shear strength decreased with increasing aging temperature and time. Until the aging at 185 °C for 15 days and at 200 °C for 3 days, fractures occurred in the bulk solder. After prolonged aging treatment, fractures partially occurred at the (Cu, Ni)₆Sn₅ + Au/solder interface for aging at 185 °C and at the (Ni, Cu)₃Sn₄/Ni interface for aging at 200 °C, respectively. Consequently, thick IMC layer and thermal loading history significantly affected the integrity of the Sn–0.7Cu/Ni BGA joints.     

Electromigration Reliability and Morphologies of 62Sn–36Pb–2Ni and 62Sn–36Pb–2Cu Flip-Chip Solder Joints

The near-eutectic Sn-Pb-Cu and Sn-Pb-Ni ternary solder alloys were developed based on the consideration of strength and fatigue reliability enhancement of solder joints in part via the altering of formation of interfacial intermetallic compounds. In this work, we examine electromigration reliability and morphologies of 62Sn-36Pb-2Ni and 62Sn-36Pb-2Cu flip-chip solder joints subjected to two test conditions that combine different average current densities and ambient temperatures: 5 kA/cm² at 150 degC and 20 kA/cm² at 3 degC. Under the test condition of 5 kA/cm² at 150 degC, 62Sn-36Pb-2Cu is overwhelmingly better than 62Sn-36Pb-2Ni in terms of electromigration reliability. However, under the test condition of 20 kA/cm2 at 30 degC, the electromigration fatigue life of 62Sn-36Pb-2Ni shows a profuse enhancement and exceeds that of 62Sn-36Pb-2Cu. Electromigration-induced morphologies are also examined on the cross sections of solder joints using scanning electron microscopy.     

Effects of TMF heating rates on damage accumulation and resultant mechanical behavior of Sn–Ag based solder joints

Solder joint reliability depends on several service parameters such as temperature extremes encountered, dwell times at these temperatures, and the ramp-rates representing the rate at which the temperature changes are imposed. TMF of Sn–Ag based solder alloy joints of realistic dimensions were carried out with dwell of 115 min and 20 min at 150 °C and −15 °C, respectively. Different heating rates were obtained by controlling the power input during heating part of TMF cycles. Surface damage and residual mechanical strength of these solder joints were characterized after 0, 250, 500, and 1000 TMF cycles to evaluate the role of TMF heating rate on the solder joint integrity.     

Effect of alloying elements on properties and microstructures of SnAgCu solders

Recent years, the SnAgCu family of alloys has been found a widely application as a replacement for the conventional SnPb solders in electronic industry. In order to further enhance the properties of SnAgCu solder alloys, alloying elements such as rare earth, Bi, Sb, Fe, Co, Mn, Ti, In, Ni, Ge and nano-particles were selected by lots of researchers as alloys addition into these alloys. Rare earth (RE) elements have been called the ‘‘vitamin” of metals, which means that a small amount of RE elements can greatly enhance the properties of metals, such as microstructure refinement, alloying and purification of materials and metamorphosis of inclusions. In addition, a small amount of Zn addition has the ability to reduce undercooling efficiently and suppress the formation of massive primary Ag₃Sn plates, and Bi/Ga has the ability to enhance the wettability of SnAgCu alloys as well as Ni. Moreover, adding Co/Fe/Ge can effectively refine microstructure, modify interfacial Cu-Sn compounds and increase the shear strength of joints with Cu. This paper summarizes the effects of alloying elements on the wettability, mechanical properties, creep behavior and microstructures of SnAgCu lead-free solder alloys.     

Direct Ink‐Jet Printing of Ag–Cu Nanoparticle and Ag‐Precursor Based Electrodes for OFET Applications

The field of organic electronics has seen tremendous progress over the last years and all‐solution‐based processes are believed to be one of the key routes to ultra low‐cost roll‐to‐roll device and circuit fabrication. In this regard a variety of functional materials has been successfully designed for inkjet printing. While orthogonal‐solvent approaches have frequently been used to tackle the solubility issue in multilayer solution processing, the focus of this work lies on printed metal electrodes for organic field‐effect transistors (OFET) and their curing concepts. Two metallic inkjet‐printable materials are studied: i) a silver‐copper nanoparticle based dispersion and ii) a soluble organic silver‐precursor. Photoelectron spectroscopy reveals largely metallic properties of the cured materials, which are compared with respect to OFET performance and process‐related issues. Contact resistance of the prepared metal electrodes is significantly larger than that of evaporated top‐contact gold electrodes. As direct patterning via inkjet printing limits the reliably achievable channel length to values well above 10 μm, the influence of contact resistance is rather small, however, and overall device performance is comparable.     

Microstructure, thermal analysis and hardness of a Sn–Ag–Cu–1 wt% nano-TiO2 composite solder on flexible ball grid array substrates

Sn-Ag-Cu composite solders reinforced with nano-sized, nonreacting, noncoarsening 1 wt% TiO₂ particles were prepared by mechanically dispersing TiO₂ nano-particles into Sn-Ag-Cu solder powder and the interfacial morphology of the solder and flexible BGA substrates were characterized metallographically. At their interfaces, different types of scallop-shaped intermetallic compound layers such as Cu₆Sn₅ for a Ag metallized Cu pad and Sn-Cu-Ni for a Au/Ni and Ni metallized Cu pad, were found in plain Sn-Ag-Cu solder joints and solder joints containing 1 wt% TiO₂ nano-particles. In addition, the intermetallic compound layer thicknesses increased substantially with the number of reflow cycles. In the solder ball region, Ag₃Sn, Cu₆Sn₅ and AuSn₄ IMC particles were found to be uniformly distributed in the β-Sn matrix. However, after the addition of TiO₂ nano-particles, Ag₃Sn, AuSn₄ and Cu₆Sn₅ IMC particles appeared with a fine microstructure and retarded the growth rate of IMC layers at their interfaces. The Sn-Ag-Cu solder joints containing 1 wt% TiO₂ nano-particles consistently displayed a higher hardness than that of the plain Sn-Ag-Cu solder joints as a function of the number of reflow cycles due to the well-controlled fine microstructure and homogeneous distribution of TiO₂ nano-particles which gave a second phase dispersion strengthening mechanism.     

The formation and growth of intermetallic compounds and shear strength at Sn–Zn solder/Au–Ni–Cu interfaces

The microstructures and shear strength of the interface between Sn–Zn lead-free solders and Au/Ni/Cu interface under thermal aging conditions was investigated. The intermetallic compounds (IMCs) at the interface between Sn–Zn solders and Au/Ni/Cu interface were analyzed by field emission scanning electron microscopy and transmission electron microscopy. The results showed the decrease in the shear strength of the interface with aging time and temperature. The solder ball with highly activated flux had about 8.2% increased shear strength than that with BGA/CSP flux. Imperfect wetting and many voids were observed in the fracture surface of the latter flux. The decreased shear strength was influenced by IMC growth and Zn grain coarsening. In the solder layer, Zn reacted with Au and then was transformed to the β-AuZn compound. Although AuZn grew first, three diffusion layers of γ-Ni₅Zn₂₁ compounds were formed after aging for 600 h at 150 °C. The layers divided by Ni₅Zn₂₁ (1), (2), and (3) were formed with the thickness of 0.7 μm, 4 μm, and 2 μm, respectively.