Ar+注入对UHMWPE摩擦学性能的影响

采用离子注入技术对超高分子聚乙烯（UHMWPE）进行了Ar＋注入表面改性,采用光学显微镜（OM）、原子力显微镜（AFM）和傅里叶变换红外光谱（FT-IR）观察和测定了Ar＋注入UHMWPE表面特性。采用万能磨损试验机考察了不同剂量Ar＋注入后UHMWPE的摩擦磨损性能。结果表明：Ar＋注入改变了UHMWPE表面颜色、形貌和微观的分子结构,提高了表面硬度和弹性模量。在干摩擦及去离子水润滑条件下,Ar＋注入后UHMWPE耐磨性能得到了明显的提高,且效果随剂量的增加而增强,然而伴随着摩擦系数增大。     

低能氮离子注入对大豆幼苗脂质过氧化的影响

用N+注入丰豆101的种子,采收子叶伸展后24h和96h的幼苗做为试验材料,研究N+注入对其幼苗过氧化物酶(POD)、过氧化氢酶(CAT)和超氧化物歧化酶(SOD)活性以及氧化产物丙二醛(MDA)的含量、电解质外渗率的影响。结果表明,在25keV能量下,当N+注量在6.5×1016-7.8×1016N+/cm2时,幼苗的SOD和CAT活性最高。 而POD活性在小于5.2×1016N+/cm2低剂量下, 活性较恒定, 在大于5.2×1016N+/cm2中高剂量下,活性逐渐增大。此外,N+注入还可降低幼苗子叶中的MDA积累量和电解质外渗率,而且在6.5×1016N+/cm2剂量下,幼苗中的MDA含量和电解质外渗率最低。揭示了一定剂量N+注入大豆种子可削弱幼苗脂质过氧化作用以及提高其抗寒性的关系。     

Optical behaviour of Er doped rutile by ion implantation

Rutile single crystals were implanted at room temperature with fluences of 5 × 10¹⁵ Er⁺/cm² ions with 150 keV energy. Rutherford backscattering/channeling along the 0 0 1 axis reveals complete amorphization of the implanted region. Photoluminescence reveals the presence of an optical centre close to the intra-ionic emission of Er³⁺ in the as-implanted samples. After annealing at 800 °C in air no changes were observed in the aligned RBS spectrum. On the contrary, annealing in reducing atmosphere (vacuum) induces the epitaxy of the damage layer. These results are unexpected, since for implantations of other ions under the same conditions, epitaxial recrystallization of the damage region occurs at this temperature. On the other hand, photoluminescence studies show the presence of new Er-related optical centres with high thermal stability in the samples annealed under oxidizing conditions. Annealing at 1000 °C in vacuum leads to the complete recrystallization of the damaged region. At this temperature a large fraction of Er segregates to the surface.     

Effect of Fe ion implantation on tribological properties and Raman spectra characteristics of diamond-like carbon film

1 Introduction It is well known that DLC (diamond-like carbon)prepared by physical vapor deposition, plasma en-hanced chemical vapor deposition (PECVD) and otherplasma processing is an amorphous carbon materialcontaining sp2 and sp3 bonded carbon atoms. DLCfilm possesses some interesting properties, such ashigh hardness and Young's modulus, chemical inert-ness and low friction coefficient. The property andstructure of DLC film can be modified by addingsome metals. Ion implantation…     

Formation of Au nanoparticles in sapphire by using Ar ion implantation and thermal annealing

In this paper, we present results of the synthesis of gold nanoclusters in sapphire, using Ar ion implantation and annealing in air. Unlike the conventional method of Au implantation followed by thermal annealing, Au was deposited on the surface of m- and a- cut sapphire single crystal samples including those pre-implanted with Ar ions. Au atoms were brought into the substrate by subsequent implantation of Ar ions to form Au nanoparticles. Samples were finally annealed stepwisely in air at temperatures ranging from 400 to 800 °C and then studied using UV-vis absorption spectrometry, transmission electron microscopy and Rutherford backscattered spectrometry. Evidence of the formation Au nanoparticles in the sapphire can be obtained from the characteristic surface plasmon resonance (SPR) absorption band in the optical absorption spectra or directly from the transmission electron microscopy. The results of optical absorption spectra indicate that the specimen orientations and pre-implantation also influence the size and the volume fraction of Au nanoparticles formed. Theoretical calculations using Maxwell-Garnett effective medium theory supply a good interpretation of the optical absorption results.     

离子注入对电器触头性能的影响

对两种电器触头注入1×10~(17)/cm~2的氮离子,然后做低压电器通断试验,测量了触头的重量损失、温升、接触电阻、触头材料转移等参数,发现离子注入方法处理对电器触头性能有不同程度的改善。     

Structure and tribological performance of helium-implanted layer on Ti6Al4V alloy by plasma-based ion implantation

The present paper concentrates on tribological performance of Ti6Al4V alloy treated by helium plasma-based ion implantation with a voltage of −30 kV and a dose range of 1, 3, 6 and 9 × 10¹⁷ He/cm². X-ray photoelectron spectroscopy (XPS), Transmission electron microscopy (TEM) and Atomic force microscopy (AFM) were used to characterize composition, structure and surface morphology, respectively. The variation of hardness with indenting depth was measured and tribological performance was evaluated. The uniform cavities with a diameter of several nanometers are formed in the helium-implanted layer on Ti6Al4V alloy. Helium implantation enhances the ingress of O, C and N and produces TiO₂, Al₂O₃, TiC, TiN in the near surface layer on their removal from the vacuum and exposure to normal atmospheric condition. In the near surface layer, the hardness of implanted samples increases remarkably comparing with the untreated sample, and the maximum peak increasing factor is up to 2.9 for the sample implanted with 3 × 10¹⁷ He/cm². A decrease in surface roughness, resulting from the leveling effect of sputtering and re-deposition during implantation, has also been observed. Comparing with the untreated sample, implanted samples have a good wear resistance property. And the maximum increase in wear resistance reaches over seven times that of the untreated one for the sample implanted with 3 × 10¹⁷ He/cm². The wear mechanism of implanted samples is abrasive-dominated.     

N+离子注入对锆-4合金耐腐蚀性能的影响

为了研究N+离子注入对锆-4合金耐腐蚀性能的影响,本文使用直线加速器产生的N+离子注入锆-4合金样品,通过对离子注入后样品电化学曲线的测量,分析不同剂量下N+离子注入对锆-4合金钝化电流密度的影响,同时使用透射电子显微镜分析注入层的微观结构.结果表明,随着注入剂量的提高(0-1×1016cm-2),样品钝化电流密度下降,耐腐蚀性能提高,其原因主要归结于样品表层由多晶结构到非晶结构的转变过程.     

Er+ medium energy ion implantation into lithium niobate

Erbium-doped lithium niobate (Er:LiNbO₃) is a prospective photonics component, operating at 1.5 μm, which could find its use chiefly as an optical amplifier or waveguide laser. In this study, we have focused on the properties of the optically active Er:LiNbO₃ layers, which are fabricated by medium energy ion implantation under various experimental conditions. Erbium ions were implanted at energies of 330 and 500 keV with fluences of 1.0 × 10¹⁵, 2.5 × 10¹⁵ and 1.0 × 10¹⁶ cm^?2 into LiNbO₃ single-crystalline cuts of various orientations. The as-implanted samples were annealed in air at 350 °C for 5 h. The depth distribution and diffusion profiles of the implanted Er were measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He⁺ ions. The projected range R_P and projected range straggling ΔR_P were calculated employing the SRIM code. The damage distribution and structural changes were described using the RBS/channelling method. Changes of the lithium concentration depth distribution were studied by Neutron Depth Profiling (NDP). The photoluminescence spectra of the samples were measured to determine whether the emission was in the desired region of 1.5 μm. The obtained data made it possible to reveal the relations between the structural changes of erbium-implanted lithium niobate and its luminescence properties important for photonics applications.     

Secondary ion emission from beryllium surfaces by Ar and /or (Ar+D2) mixed ion bombardments

With respect to the impurity emission and erosion of a Be first wall, a secondary ion mass spectrometric investigation was carried out along with surface characterization with X-ray photoelectron spectroscopy. It was found that Be is emitted as distinct types of chemical forms from the surface owing to sputtering with Ar⁺ and an (Ar⁺+ D⁺₂) mixture: (i) Be and Be-cluster, (ii) oxide and hydroxide, and (iii) hydride and/or deuteride.     

Effects of neutron-induced ion implantation into blanket structural materials

The high flux of energetic neutrons in CTR blankets will lead to an appreciable implantation of light particles in structural materials as a consequence of neutron impacts. The influence of implanted helium and lithium on the material properties of CTR structural materials should be known because both media are prospective coolants. 30keV lithium ions were implanted into pre-thinned Nb foils. Electron micrographs showed black dots which were identified as precipitates of Li. A concentration profile of He in Nb, which suitably simulates the implantation profile in CTR's, was obtained with the help of the ¹⁰B(n, α)⁷Li reaction. Nb samples which were irradiated up to a He dose of 6 × 10¹⁶ cm^?2 showed heavily damaged surfaces after annealing. Surface erosion of CTR blanket materials due to this process cannot be excluded.     

N+离子注入阿维拉霉素产生菌诱变效应的研究

选用低能(30keV)N 离子注入阿维拉霉素产生菌SV 56,研究其诱变效应.试验结果表明:SV-56菌株存活率曲线是典型的"马鞍型"剂量-效应曲线,"马鞍型"区域内具有高的正突变率(20.9%-26.2%).通过5×1015cm-2N 注入诱变处理、链霉素抗性筛选,最终获得一株稳定性良好、阿维拉霉素产量稳定在79.6-82.9 mg·L-1之间、较出发菌株提高41.4%-47.2%的突变株SVN-116.     

Effects of Ag and Au ion implantation of lithium niobate

The optical effects of implantation of lithium niobate crystals with 100 keV Ag⁺ and 8 MeV Au³⁺ ions with fluences of 1 × 10¹⁷ ions/cm² have been investigated. Metal nanoparticle formation has been studied as a function of annealing temperature, and the resulting optical extinction curves have been simulated by the Mie theory in the small particle limit. Transmission electron microscopy (TEM) has provided direct evidence for the MNP sizes allowing comparison with the calculated results. A TEM study of an X-cut sample implanted with Ag⁺ ions show that the implanted region is partially amorphised. The differences in the temperature of Au colloid development in X- and Y-cut faces of the lithium niobate crystal are attributed to restoration of crystallinity as a result of annealing.     

低能N+注入诱变选育威兰胶高产菌的研究

利用低能N 束对威兰胶生产菌进行了辐射诱变选育研究.能量为20keV,注入剂量为20×1014/cm-2时,筛选出一株高产菌株Alcaligenes sp.NX-3-1.结果表明,摇瓶发酵中诱变菌威兰胶产量比出发菌高27.5%;在7.5L发酵罐上,Alcaligenes sp.NX-3-1菌生长速度比出发菌快,生物量高,底物葡萄糖消耗量多,威兰胶产量较出发菌有明显提高,最高达26.4g·L-1.     

低能氮离子注入香菇生物学效应的研究

本文用能量为 15 keV,而注量不同的氮离子注入对武香一号香菇进行诱变,分析了不同注量下菌丝长速,菌丝生物量以及多糖含量的变化,对该低能离子与微生物间的作用规律进行了初步探索,为进一步筛选出多糖高产菌株提供前提.实验结果表明菌丝长速,菌丝生物量及多糖含量随不同注量的变化情况基本遵循"马鞍型曲线".注量小时菌丝日均长速较快,随着注量的增大,菌丝日均长速呈下降趋势,但在1.5×1016cm-2附近,菌丝长速有短暂回升.在注量较小时,随着注量的增加,菌丝生物量及多糖含量先升高后降低,注量为4×1015cm-2时,两者均达到最大值,而后会出现小的波动,注量增加到1.5×1016cm-2时,菌丝生物量及多糖含量又会达到-个较大的峰值.通过发酵动力学分析,研究了香菇液体菌种培养过程中菌丝球数量及形态、摇瓶总重、pH值、多糖含量等指标的变化情况,绘制该菌发酵产糖的过程曲线,这将为诱变前后液体发酵过程的控制提供参数.     

Phase structure of the CPD prepared CdS films before and after Ar^＋ ion irradiation

CdS films prepared with chemical pyrolysis deposition(CPD) at different temperature during film growth were characterized by XRD.Hexagon-like structrue appeared at the temperature of 350-500℃,while wurtzite phase was observed at temperature of 540℃ during film growth,Also CdS films prepared by CPD at 400℃ were undergone post annealing at different temperature of 200-600℃ or post Ar^ ion irradiation.It is found that wurtzite phase happened when the annealing temperature rose to 600℃.And hexagon-like structure existed at the annealing temperature from 25℃to near 500℃.Ar^ ion irradiation could not cause phase transformation,but induce some preferred orientations and an increase in grain size for the CdS films.     

聚苯胺的离子注入掺杂研究

研究了聚苯胺的离子注入掺杂对导电性的影响。用红外和紫外谱法探讨了聚苯胺的氧化态，本征态和还原态经离子注入后，其结构可能发生的变化。结果表明，聚苯胺的三种态的离子注入均为还原过程。讨论了离子注入掺杂的导电机制。     

N+和Ti+离子注入井冈霉素生产菌诱变筛选高产菌株的研究

利用N 和Ti 离子注入对井冈霉素生产菌株进行诱变选育,比较了出发菌株经过两种离子源注入后的诱变效应.初步探索使用金属离子和气体离子交替注入诱变方法,得到了较高的正突变率和突变增幅.用该方法诱变得到一株高产菌株B1-3,其产井冈霉素A组分的效价为21514,比出发菌株提高54.4%.经多次传代实验表明该菌株的遗传稳定性较好.     

Fabrication of channel waveguides in Er3+-doped tellurite glass via N+ ion implantation

Er³⁺-doped tellurite glasses are of great interest for the fabrication of active integrated optical circuits because of their unique properties in terms of bandwidth and rare-earth solubility. Multimode channel waveguides in a glass of this family, namely, a sodium–tungsten–tellurite glass, have been realized with high-energy ion irradiation, where the ion beam size in one dimension was reduced to a few tens of micrometers by a silicon mask. This approach makes possible the fast fabrication of waveguides with high aspect ratio (～10³). The 24 μm wide and 10 mm long waveguide stripes achieved by 1.5 MeV N⁺ irradiation with fluences between 5 × 10¹⁵ and 4.0 × 10¹⁶ ions/cm² were studied using interference phase contrast microscopy and surface profilometry. The waveguiding effect was investigated by the end-fire coupling technique. Multimode light propagation has indeed been observed in these channels, confirming the effectiveness of this method. Dark-line spectroscopy revealed that light propagated in the channel via the optical barrier formed by the N⁺ implantation.