RF溅射稀土（La，Nd）掺杂ZnO薄膜的结构

通过射频磁控溅射技术在Si(111)衬底上制备了未掺杂和镧、钕掺杂ZnO薄膜.XRD分析表明,ZnO薄膜具有c轴择优生长,镧、钕掺杂ZnO薄膜为自由生长的纳米多晶薄膜.用AFM观测薄膜的表面形貌,镧、钕掺杂ZnO薄膜表面形貌粗糙.     

RF溅射稀土掺杂ZnO薄膜的结构与发光特性

通过射频磁控溅射技术在Si(111)衬底上制备了未掺杂和La、Nd掺杂ZnO薄膜.XRD分析表明,ZnO薄膜具有c轴择优生长,La、Nd掺杂ZnO薄膜为纳米多晶薄膜.AFM观测,La、Nd掺杂ZnO薄膜表面形貌较为粗糙.从薄膜的室温光致光谱中看到,所有薄膜都出现了395 nm的强紫光峰和495 nm的弱绿光峰,La掺杂ZnO薄膜的峰强度增大,Nd掺杂ZnO薄膜的峰强度减弱,分析了掺杂引起PL峰强度变化的原因.     

新型工艺制备ZnO薄膜的结构与形貌研究

采用了一种新型工艺制备ZnO薄膜。新工艺采用二步法,首先在N型Si(100)衬底上用离子束沉积溅射一层金属Zn膜,然后通过热氧化金属Zn膜制备ZnO薄膜。通过X射线衍射、原子力显微镜对不同制备工艺下的ZnO薄膜进行结构与形貌的分析比较。研究表明,Zn膜的离子束溅射沉积时间、热氧化时间和辅助枪的离子束对热氧化后的ZnO薄膜再轰击处理对ZnO薄膜的结构与形貌都会产生影响。     

ZnO陶瓷靶制备及其薄膜 RF溅射工艺研究

利用固相反应制备了直径为70mm,厚度为10-15mm高质量掺杂Li2CO2的ZnO陶瓷靶材,实验了不同摩尔浓度的Li+掺杂对靶材性能的影响,确定了最佳Li+掺杂量为2．2mol％,同时通过在不同温度烧结实验、不同成型压力实验确定了ZnO靶材制备的最佳工艺,并采用所制备的ZnO-Li2.2％陶瓷靶和RF(射频磁控)技术在Si(100)、玻璃(载玻片)、及Pt(111)／Ti／SiO2／Si(100)基片上制备出高度c轴(002)择优取向的ZnO薄膜,其绝缘电阻率ρ为4．12×108Ω·cm,达到了声表面波器件(SAW)的使用要求．     

射频磁控溅射制备Mn掺杂ZnO薄膜的结构与光学性能

采用反应射频磁控溅射方法制备Zn1-xMnxO薄膜(0≤x≤0.25),并在不同温度下进行退火处理.通过原子力显微镜、薄膜X射线衍射、透射电子显微镜和透射光谱对薄膜的成分、表面形貌、微结构和光学性质进行了研究.结果表明,薄膜结晶质量明显地依赖于掺杂Mn元素的浓度,所有薄膜都表现了沿(002)晶面方向择优取向生长,当Mn...     

退火温度对RF磁控溅射ZnO薄膜力学性能的影响

采用X射线衍射分析(XRD),原子力显微镜(AFM)及纳米压痕技术测试分析了多晶ZnO薄膜的晶格结构和力学性能.薄膜的制备采用了射频(RF)磁控溅射方法,并分别在不同温度下进行了退火处理.XRD分析显示随着退火温度的上升,薄膜的晶粒尺寸逐步增大,且C轴取向显著增强.压痕测试结果表明,由于尺寸效应的影响,硬度随退火温度的变化有明显的趋势,从2.5GPa(常温下)逐步增加到5.5GPa(4500C),随着温度的进一步上升,硬度值又逐步下降到4.5GPa(650℃).弹性模量整体随退火温度的变化并不呈现明显的规律,但在450℃和200℃下退火分别有最大值26.7GPa和最小值21.5GPa,这是由于尺寸效应与晶格取向的双重作用的结果.测试结果表明适当的退火处理对ZnO薄膜的结晶品质与力学性能有明显的改善.     

衬底温度对磁控溅射法制备ZnO薄膜结构及光学特性的影响

采用射频反应磁控溅射法在玻璃衬底上制备了具有c轴高择优取向的ZnO薄膜,利用X射线衍射仪、扫描探针显微镜及紫外分光光度计研究了生长温度对ZnO薄膜的结构及光学吸收和透射特性的影响.结果表明,合适的衬底温度有利于提高ZnO薄膜的结晶质量;薄膜在紫外区显示出较强的光吸收,在可见光区的平均透过率达到90%以上,且随着衬底温度的升高,薄膜的光学带隙减小、吸收边红移.采用量子限域模型对薄膜的光学带隙作了相应的理论计算,计算结果与实验值符合得较好.     

基片温度对反应射频磁控溅射法制备掺杂CeO2电解质薄膜的影响

利用Gd/Ce镶嵌复合靶、采用反应射频磁控溅射技术制备了Gd2O3掺杂CeO2(GDC)氧离子导体电解质薄膜,重点探讨了基片温度对薄膜物相结构、沉积速率及生长形貌的影响.分析结果表明,不同温度下制备的薄膜中,立方面心结构GDC固溶体相占主导,同时存在少量体心立方结构Gd2O3中间相;GDC薄膜的生长取向随基片温度而变化,200℃时,无择优取向,500℃时薄膜呈现(220)织构,700℃则为(111)择优取向;薄膜沉积速率随基片温度呈阶段性规律变化,(220)方向择优生长越显著,沉积速率越高,薄膜粗糙度越大;AFM分析表明,薄膜为岛状生长,随温度升高,表面生长岛尺寸增大,岛密度变小.     

C轴择优取向ZnO薄膜的溅射工艺与结构研究

通过改变直流磁控反应溅射法的工艺条件,同时在玻璃和Si(100)、Si(111)两种硅基底上制备了ZnO薄膜。用x射线衍射方法(xRD和xRC)对薄膜结构性能进行测试表明,这些基底上生长的ZnO薄膜都得到了明显的c轴择优取向和较高的结晶度,硅基底上的薄膜结构性能普遍好于玻璃基底上淀积的薄膜。并对溅射工艺与结构的关系进行了分析。     

Al-Sn共掺杂ZnO薄膜的结构与光电性能研究

采用射频磁控共溅射法在玻璃衬底上制备出了Al与Sn共掺杂的ZnO(ATZO)薄膜.在固定ZnO∶Al(AZO)靶溅射功率不变的条件下,研究了Sn靶溅射功率对ATZO薄膜的结晶质量、表面形貌、电学和光学性能的影响.结果表明,制备的ATZO薄膜是六角纤锌矿结构的多晶薄膜,具有c轴择优取向,而且表面致密均匀.当Sn溅射功率为5W时,330 nm厚度的ATZO薄膜的电阻率最小为1.49×10-3 Ω·cm,比AZO薄膜下降了22％.ATZO薄膜在400～900 nm波段的平均透过率为88.92％,禁带宽度约为3.62 eV.     

Investigation on Mn doped ZnO thin films grown by RF magnetron sputtering

In this paper, we have investigated the Zn_1 − x Mn_xO (x = 0.05, 0.10 and 0.15) thin films grown by RF magnetron sputtering. The grown films on sapphire [Al₂O₃(0001)] substrates have been characterized using X-ray Diffraction (XRD), Photoluminescence (PL) and Vibrating Sample Magnetometer (VSM) in order to investigate the structural, optical and magnetic properties of the films respectively. It is observed from XRD that all the films are single crystalline with (002) preferential orientation along c-axis. PL spectra reveal that the addition of Mn marginally shifts the Near Band Edge (NBE) position towards the higher energy side. The magnetic measurements of the films using VSM clearly indicate the ferromagnetic nature.     

Study of the structural and optical properties of GaPN thin films grown by magnetron RF sputtering

GaP_1−xN_x thin films were deposited on glass substrates by RF sputtering employing a nitrogen-argon atmosphere in a partial pressure of 2×10⁻² Torr. We varied the growth temperature in the range 420-520 °C. The film's optical properties were studied by transmittance and absorbance spectroscopy. Characterization by scanning electron microscopy in cross-sectional view, atomic force microscopy, and X-ray diffraction was performed to determinate the film thickness, surface morphology, and crystal structure, respectively. Raman spectroscopy was employed to analyze the structural properties of samples. The GaP_1−xN_x films presented a cubic polycrystalline structure with a preferential orientation along the [1 1 1] direction. By varying the growth conditions we were able to change the band gap energy between 1.35 and 1.98 eV.     

Study on ZnO thin films deposited on sol-gel grown ZnO buffer by RF magnetron sputtering

ZnO thin films with preferential C-orientation and dense microstructure have been prepared using RF magnetron sputtering method by the insertion of a sol-gel grown ZnO buffer layer. The XRD results show that the C-orientation of the film deposited on ZnO buffer is obviously better than that deposited directly on lime-glass substrate. With an increase of the RF power from 100 to 380 W, C-orientation of the films with ZnO buffer improves and the grain size increases. When the RF power equals 550 W, the orientation of the film changes to (1 0 0) and the grain size decreases. The crystalline and microstructure quality of the films can be improved after annealing, however, the grain size is not much dependent on the annealing temperature in the range of 560-610 °C.     

Optical and structural characteristics of ZnO thin films grown by rf magnetron sputtering

Nanostructured ZnO thin films on Pyrex glass substrates were deposited by rf magnetron sputtering at different substrate temperatures. Structural features and surface morphology were studied by X-ray diffraction and atomic force microscopy analyses. Films were found to be transparent in the visible range above 400 nm, having transparency above 90%. Sharp ultraviolet absorption edges around 370 nm were used to extract the optical band gap for samples of different particle sizes. Optical band gap energy for the films varied from 3.24 to 3.32 eV and the electronic transition was of the direct in nature. A correlation of the band gap of nanocrystalline ZnO films with particle size and strain was discussed. Photoluminescence emission in UV range, which is due to near band edge emission is more intense in comparison with the green band emission (due to defect state) was observed in all samples, indicating a good optical quality of the deposited films.     

Electrical and optical properties of ZnO:Al thin films grown by magnetron sputtering

The properties of transparent conductive ZnO:Al thin films grown by R.F. magnetron sputtering method are investigated. The working pressure (argon gas) is changed from 2.5 to 40.0 mTorr to study its influence on the characteristics of ZnO:Al thin films. The ZnO:Al thin films have better texture due to the increase in the surface mobility, which resulted from the increase in the mean free path of sputtering gas under lower working pressure. The microstructure of ZnO:Al films is found to be affected obviously by changing the working pressure. It is shown that the grain size of ZnO:Al thin films decreases with the increase of working pressure. The X-ray diffraction patterns indicate that the poor crystallized structure of ZnO:Al films is obtained at higher working pressure. Except 40 mTorr, the highly (002)-oriented ZnO:Al thin films can be found at the measured range of working pressure. Moreover, the growth rate of the films decreases from 1.5 to 0.5 nm/min as the working pressure increases from 2.5 to 40.0 mTorr. The results of optical transmittance measurement of ZnO:Al thin films reveal a high transmittance (>80%) in visible region and exhibit a sharp absorption edge at wavelength about 350 nm.     

Properties of Al heavy-doped ZnO thin films by RF magnetron sputtering

Al-doped ZnO films were deposited by RF magnetron sputtering. From the X-ray diffraction and scanning electron spectrometer studies, wurtzite structure with (0 0 2) orientation ZnO thin films were obtained at Al concentration below 15 atomic percent (at.%). As the Al concentration above 15 at.%, the thin films did not fully crystallize. Two new emission peaks occurred at 351 nm and 313 nm when the Al doping above 15 at.% from the photoluminescence spectrum, and the peaks shift towards the shorter wavelengths with increasing the Al concentration. X-ray photonic spectra of O 1s conformed the amount of oxygen captured by Al³⁺ increasing as the Al³⁺ concentration increasing due to the dominant Al³⁺ possess high charge in competition with Zn²⁺ in the matrix of ZnO.     

Structural and electrical properties of Li-doped p-type ZnO thin films fabricated by RF magnetron sputtering

Li-doped p-type ZnO thin films were grown by using radio frequency magnetron sputtering. In our experiment, ZnO targets were fabricated by using the Li-doped ZnO powders that had been synthesized by glycine (urea)-nitrate combustion process. The structural characteristics of ZnO thin films were examined by XRD and SEM. The results showed that ZnO films possess a good crystalline with c-axis orientation, uniform thickness and dense surface. Current-voltage properties of p-ZnO:Li/n-Si structure had been examined in an effort to delineate the carrier type behavior in ZnO semiconductor. p-ZnO:Li/n-Si heterojunctions displayed rectifying behavior. As a result I-V measurements exhibited a polarity consistent with the Li-doped ZnO being p-type.     

Annealing effects on structural and optical properties of ZnMgO films grown by RF magnetron sputtering

Two sets of ZnMgO thin films have been fabricated on Si (111) substrates by RF magnetron sputtering, and were annealed at air atmosphere afterwards. The effects of annealing temperature and time on structural and optical properties were also characterized by X-ray diffraction, scanning electron microscopy and photoluminescence (PL) spectra. For samples fabricated at a lower temperature (200 °C, defined as samples I), the experimental results revealed that only hexagonal phase was observed for the films annealed at the temperature range from 180 to 420 °C, and the best crystal quality for the films was found at 240 °C. For samples synthesized at 220 °C (defined as samples II), the crystal structures exhibited anneal-time dependent. The experimental results revealed coexistence of hexagonal and cubic phase when they were annealed at a set temperature of 220 °C with the different annealing time, and the best one can be observed when the anneal time was 30 min. PL spectra showed blue shift for UV peak with the increase of annealing temperature for samples I, and the UV emission occurred red shift and then blue shift when the anneal time increased from 20 to 30 min for samples II.     

Optical properties of fluoride thin films deposited by RF magnetron sputtering

Fluoride thin films for 193-nm lithography were deposited by three different types of RF magnetron sputtering. Systematic analysis of the relation between optical properties and deposition conditions of these thin films is discussed.