SnO2 Nanowire Arrays and Electrical Properties Synthesized by Fast Heating a Mixture of SnO2 and CNTs Waste Soot

SnO₂ nanowire arrays were synthesized by fast heating a mixture of SnO₂ and the carbon nanotubes waste soot by high-frequency induction heating. The resultant SnO₂ nanowires possess diameters from 50 to 100 nm and lengths up to tens of mircrometers. The field-effect transistors based on single SnO₂ nanowire exhibit that as-synthesized nanowires have better transistor performance in terms of transconductance and on/off ratio. This work demonstrates a simple technique to the growth of nanomaterials for application in future nanoelectronic devices.     

Tin Oxide Nanowires: The Influence of Trap States on Ultrafast Carrier Relaxation

We have studied the optical properties and carrier dynamics in SnO₂ nanowires (NWs) with an average radius of 50 nm that were grown via the vapor–liquid solid method. Transient differential absorption measurements have been employed to investigate the ultrafast relaxation dynamics of photogenerated carriers in the SnO₂ NWs. Steady state transmission measurements revealed that the band gap of these NWs is 3.77 eV and contains two broad absorption bands. The first is located below the band edge (shallow traps) and the second near the center of the band gap (deep traps). Both of these absorption bands seem to play a crucial role in the relaxation of the photogenerated carriers. Time resolved measurements suggest that the photogenerated carriers take a few picoseconds to move into the shallow trap states whereas they take ~70 ps to move from the shallow to the deep trap states. Furthermore the recombination process of electrons in these trap states with holes in the valence band takes ~2 ns. Auger recombination appears to be important at the highest fluence used in this study (500 μJ/cm²); however, it has negligible effect for fluences below 50 μJ/cm². The Auger coefficient for the SnO₂ NWs was estimated to be 7.5 ± 2.5 × 10⁻³¹ cm⁶/s.     

The current image of single SnO2 nanobelt nanodevice studied by conductive atomic force microscopy

A single SnO₂ nanobelt was assembled on a pair of Au electrodes by electric-field assembly method. The electronic transport property of single SnO₂ nanobelt was studied by conductive atomic force microscopy (C-AFM). Back-to-back Schottky barrier-type junctions were created between AFM tip/SnO₂ nanobelt/Au electrode which can be concluded from the I-V curve. The current images of single SnO₂ nanobelt nanodevices were also studied by C-AFM techniques, which showed stripes patterns on the nanobelt surface. The current images of the nanobelt devices correlate the microscopy with separate transport properties measurement together.     

Sulfated SnO2-SiO2 superacid catalysts by Sol-Gel method

A series of sulfated SnO₂-SiO₂ binary oxides were prepared by the Sol-Gel method with different SnO₂ molar content. Tin chloride and tetraethylorthosilicate were used as precursors. The resulting solids were characterized by Fourier Transform Infrared spectroscopy (FTIR), ammonia thermodesorption, surface area measurements and also titrated using Hammett indicators. To correlate the acidic properties with catalytic activity, solids were tested in the 2-propanol decomposition reaction. SnO₂ addition to SiO₂ produce a twofold synergetic effect: an increase in the surface area in most of the resulting mixed oxides and high catalytic activities for the dehydration reaction. The titrated materials, using Hammett indicators, are of superacid nature (Ho –13.7).     

Combustion of Methane at Low Temperature over Pd and Pt Catalysts Supported on Al2O3, SnO2 and Al2O3-Grafted SnO2

Pd and Pt catalysts supported on alumina, tin(IV) oxide and tin(IV) oxide grafted on alumina were prepared, characterised and tested with respect to the low-temperature combustion of methane after reduction in H₂ and ageing under reactants at 600°C. In the case of Pd, the use of SnO₂ or SnO₂-based supports led to catalysts slightly less active than Pd/Al₂O₃. In contrast, SnO₂ was found to strongly promote the oxidation of methane over Pt catalysts with respect to Pt/Al₂O₃, even after ageing under reactants. When Pt was supported on SnO₂ grafted on Al₂O₃, the activity was found at most similar to or, after ageing, lower than Pt/Al₂O₃. This negative effect was discussed, being partly related to the sintering of SnO₂ under reactants observed by FTIR and XRD.     

Graphene-supported SnO2 nanoparticles prepared by a solvothermal approach for an enhanced electrochemical performance in lithium-ion batteries

SnO₂ nanoparticles were dispersed on graphene nanosheets through a solvothermal approach using ethylene glycol as the solvent. The uniform distribution of SnO₂ nanoparticles on graphene nanosheets has been confirmed by scanning electron microscopy and transmission electron microscopy. The particle size of SnO₂ was determined to be around 5 nm. The as-synthesized SnO₂/graphene nanocomposite exhibited an enhanced electrochemical performance in lithium-ion batteries, compared with bare graphene nanosheets and bare SnO₂ nanoparticles. The SnO₂/graphene nanocomposite electrode delivered a reversible lithium storage capacity of 830 mAh g⁻¹ and a stable cyclability up to 100 cycles. The excellent electrochemical properties of this graphene-supported nanocomposite could be attributed to the insertion of nanoparticles between graphene nanolayers and the optimized nanoparticles distribution on graphene nanosheets.     

Enhancement of Sm3+ emission by SnO2 nanocrystals in the silica matrix

Silica xerogels containing Sm³⁺ ions and SnO₂ nanocrystals were prepared in a sol–gel process. The image of transmission electron microscopy (TEM) shows that the SnO₂ nanocrystals are dispersed in the silica matrix. The X-ray diffraction (XRD) of the sample confirms the tetragonal phase of SnO₂. The xerogels containing SnO₂ nanocrystals and Sm³⁺ ions display the characteristic emission of Sm³⁺ ions (⁴G_5/2 → ⁶H _J (J = 5/2, 7/2, 9/2)) at the excitation of 335 nm which energy corresponds to the energy gap of the SnO₂ nanocrystals, while no emission of Sm³⁺ ions can be observed for the samples containing Sm³⁺ ions. The enhancement of the Sm³⁺ emission is probably due to the energy transfer from SnO₂ nanocrystals to Sm³⁺ ions.     

Field emission properties of carbon nanotubes synthesized by capillary type atmospheric pressure plasma enhanced chemical vapor deposition at low temperature

Carbon nanotubes (CNTs) were grown using a modified atmospheric pressure plasma with NH₃(210 sccm)/N₂(100 sccm)/C₂H₂(150 sccm)/He(8 slm) at low substrate temperatures (?500 °C) and their physical and electrical characteristics were investigated as the application to field emission devices. The grown CNTs were multi-wall CNTs (at 450 °C, 15-25 layers of carbon sheets, inner diameter: 10-15 nm, outer diameter: 30-50 nm) and the increase of substrate temperature increased the CNT length and decreased the CNT diameter. The length and diameter of the CNTs grown for 8 min at 500 °C were 8 μm and 40 ± 5 nm, respectively. Also, the defects in the grown CNTs were also decreased with increasing the substrate temperature (The ratio of defect to graphite (I_D/I_G) measured by FT-Raman at 500 °C was 0.882). The turn-on electric field of the CNTs grown at 450 °C was 2.6 V/μm and the electric field at 1 mA/cm² was 3.5 V/μm.     

Field emission of polycrystalline diamond films grown by microwave-plasma chemical vapor deposition. I. Effects of surface morphology of diamond

The effects of surface morphology on the field emission of non-doped polycrystalline diamond films with thicknesses ranging from 5 to 55 μm were studied. Diamond films grown by a microwave-plasma chemical vapor deposition technique had both the diamond and non-diamond components with pyramidal and angular crystalline structures. Although the average crystallite size increased with increasing the film thickness (d), the volume fraction of the non-diamond components in the films was insensitive to the film thickness. However, the turn-on electric field, F_T, (defined as the low-end electric field to emit electrons) showed a U-shape dependence on the film thickness. This U-shape dependence was explained by a model in which the emission current was controlled by Fowler–Norheim tunneling of electrons at surface of the pyramids when d was thinner than 20 μm and by carrier transport in the polycrystalline diamond film when d was thicker than 20 μm. The lowest field of 4 V/μm was obtained in the film with 20 μm thick.     

Synthesis and high sensing properties of a single Pd-doped SnO2 nanoribbon

Monocrystal SnO₂ and Pd-SnO₂ nanoribbons have been successfully synthesized by thermal evaporation, and novel ethanol sensors based on a single Pd-SnO₂ nanoribbon and a single SnO₂ nanoribbon were fabricated. The sensing properties of SnO₂ nanoribbon (SnO₂ NB) and Pd-doped SnO₂ nanoribbon (Pd-SnO₂ NB) sensors were investigated. The results indicated that the SnO₂ NB showed a high sensitivity to ethanol and the Pd-SnO₂ NB has a much higher sensitivity of 4.3 at 1,000 ppm of ethanol at 230°C, which is the highest sensitivity for a SnO₂-based NB. Pd-SnO₂ NB can detect ethanol in a wide range of concentration (1 ~ 1,000 ppm) with a relatively quick response (recovery) time of 8 s (9 s) at a temperature from 100°C to 300°C. In the meantime, the sensing capabilities of the Pd-SnO₂ NB under 1 ppm of ethanol at 230°C will help to promote the sensitivity of a single nanoribbon sensor. Excellent performances of such a sensor make it a promising candidate for a device design toward ever-shrinking dimensions because a single nanoribbon device is easily integrated in the electronic devices.     

Growth and Characterization of ZnO, SnO2 and ZnO/SnO2 Nanostructures from the Vapor Phase

Zinc oxide (ZnO), tin dioxide (SnO₂) and compounds ZnO/SnO₂ (ZTO) nanostructures have been synthesized successfully from the vapor phase without a catalyst using three different approaches. XRD analyses showed that ZnO with a wurtzite crystal structure, SnO₂ with a rutile crystal structure and zinc stannate (ZnSnO₃) and/or dizinc stannate (Zn₂SnO₄) were condensed from the vapor phase when Zn and/or Sn metal powders or their oxides individually or mixed were used as the starting materials. The formation of either zinc or dizinc stannate was controlled by the Zn/Sn ratio and growth technique. SEM and TEM investigations showed that ZnO grew mainly in the form of wires, rods and belts. These are believed to be originated from the common tetrapod structure of ZnO. While SnO₂ grew in the form of tetragonal rods with rectangle-like cross section and nanoparticles, ZTO grew in the form of nanobelts. The final length, width and thickness were as low as 40, 10 and 5 nm, respectively. The driving forces for growth of nanowires, nanorods, nanobelts, and nanoparticles were found to be vapor density or supersaturation, temperature, pressure and location of deposition from the source materials. The optical absorbance and photoluminescence spectra of all samples showed excitonic character at room temperature implying good crystal quality, and high photocurrent properties suggesting possible applications in nanoscaled functional devices such as optoelectronics and gas sensors.     

SO2-Assisted Simultaneous Reduction of SO2 and NO by CO on SnO2-TiO2 Solid Solution

Sn_0.5Ti_0.5O₂ shows excellent catalytic performance both for the CO-SO₂ reaction and the CO-SO₂-NO reaction. At 350 ° C, 525 ppm SO₂/520 ppm NO/2085 ppm CO, SV = 3000 h^-1, the conversion of SO₂ is nearly complete in the CO-SO₂ reaction and above 89% in the CO-SO₂-NO reaction; NO conversion is above 98% in the latter reaction. The selectivities of S and N₂ are both close to 100%. SO₂ shows a significant promoting effect on the activity of the Sn_0.5Ti_0.5O₂ catalyst for NO reduction by CO. Combining transient response experiments, catalytic tests and TPD results, we propose a SO₂-assisted NO-CO reaction concept. The existence of a surface sulfur species, which was formed during the CO-SO₂ or CO-SO₂-NO reaction, is proved by XPS analysis. It is the active site for NO reduction in the CO-SO₂-NO reaction, and through which SO₂ accomplishes its promoter role. On the basis of the results obtained, the SO₂-assisted redox mechanism of simultaneous reduction of SO₂ and NO by CO is proposed.     

Synthesis of ZnGa<Subscript>2</Subscript>O<Subscript>4</Subscript> Hierarchical Nanostructure by Au Catalysts Induced Thermal Evaporation

In this paper, ZnGa₂O₄ hierarchical nanostructures with comb-like morphology are fabricated by a simple two-step chemical vapor deposition (CVD) method: first, the Ga₂O₃ nanowires were synthesized and employed as templates for the growth of ZnGa₂O₄ nanocombs; then, the as-prepared Ga₂O₃ nanowires were reacted with ZnO vapor to form ZnGa₂O₄ nanocombs. Before the reaction, the Au nanoparticles were deposited on the surfaces of Ga₂O₃ nanowires and used as catalysts to control the teeth growth of ZnGa₂O₄ nanocombs. The as-prepared ZnGa₂O₄ nanocombs were highly crystallized with cubic spinel structure. From the photoluminescence (PL) spectrum, a broad band emission in the visible light region was observed of as-prepared ZnGa₂O₄ nanocombs, which make it promising application as an optical material.     

Single-crystalline δ-Ni2Si nanowires with excellent physical properties

In this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl₂·6H₂O as a single-source precursor. Various morphologies of δ-Ni₂Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the δ-Ni₂Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/μm), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation.     

Surface chemistry of SnO2 nanowires on Ag-catalyst-covered Si substrate studied using XPS and TDS methods

In this paper we investigate the surface chemistry, including surface contaminations, of SnO₂ nanowires deposited on Ag-covered Si substrate by vapor phase deposition (VPD), thanks to x-ray photoelectron spectroscopy (XPS) in combination with thermal desorption spectroscopy (TDS). Air-exposed SnO₂ nanowires are slightly non-stoichiometric, and a huge amount of C contaminations is observed at their surface. After the thermal physical desorption (TPD) process, SnO₂ nanowires become almost stoichiometric without any surface C contaminations. This is probably related to the fact that C contaminations, as well as residual gases from air, are weakly bounded to the crystalline SnO₂ nanowires and can be easily removed from their surface. The obtained results gave us insight on the interpretation of the aging effect of SnO₂ nanowires that is of great importance for their potential application in the development of novel chemical nanosensor devices.     

Yield Strength of Transparent MgAl2O4 Nano-Ceramic at High Pressure and Temperature

We report here experimental results of yield strength and stress relaxation measurements of transparent MgAl₂O₄ nano-ceramics at high pressure and temperature. During compression at ambient temperature, the differential strain deduced from peak broadening increased significantly with pressure up to 2 GPa, with no clear indication of strain saturation. However, by then, warming the sample above 400°C under 4 GPa, stress relaxation was obviously observed, and all subsequent plastic deformation cycles are characterized again by peak broadening. Our results reveal a remarkable reduction in yield strength as the sintering temperature increases from 400 to 900°C. The low temperature for the onset of stress relaxation has attracted attention regarding the performance of transparent MgAl₂O₄ nano-ceramics as an engineering material.     

Synthesis and White-Light Emission of ZnO/HfO2: Eu Nanocables

ZnO/HfO₂:Eu nanocables were prepared by radio frequency sputtering with electrospun ZnO nanofibers as cores. The well-crystallized ZnO/HfO₂:Eu nanocables showed a uniform intact core–shell structure, which consisted of a hexagonal ZnO core and a monoclinic HfO₂ shell. The photoluminescence properties of the samples were characterized. A white-light band emission consisted of blue, green, and red emissions was observed in the nanocables. The blue and green emissions can be attributed to the zinc vacancy and oxygen vacancy defects in ZnO/HfO₂:Eu nanocables, and the yellow–red emissions are derived from the inner 4f-shell transitions of corresponding Eu³⁺ ions in HfO₂:Eu shells. Enhanced white-light emission was observed in the nanocables. The enhancement of the emission is ascribed to the structural changes after coaxial synthesis.     

XPS,TDS, and AFM studies of surface chemistry and morphology of Ag-covered L-CVD SnO2 nanolayers

This is well known that the selectivity and sensitivity of tin dioxide (SnO₂) thin film sensors for the detection of low concentration of volatile sulfides such as H₂S in air can be improved by small amount of Ag additives. In this paper we present the results of comparative X-ray photoelectron spectroscopy (XPS), thermal desorption spectroscopy (TDS), and atomic force microscopy (AFM) studies of the surface chemistry and morphology of SnO₂ nanolayers obtained by laser-enhanced chemical vapor deposition (L-CVD) additionally covered with 1 monolayer (ML) of Ag. For as deposited SnO₂ nanolayers, a mixture of tin oxide (SnO) and tin dioxide (SnO₂) with the [C]/[Sn] ratio of approximately 1.3 was observed. After dry air exposure, the [O]/[Sn] ratio slightly increased to approximately 1.55. Moreover, an evident increasing of C contamination was observed with [C]/[Sn] ratio of approximately 3.5. After TDS experiment, the [O]/[Sn] ratio goes back to 1.3, whereas C contamination evidently decreases (by factor of 3). Simultaneously, the Ag concentration after air exposure and TDS experiment subsequently decreased (finally by factor of approximately 2), which was caused by the diffusion of Ag atoms into the subsurface layers related to the grain-type surface morphology of Ag-covered L-CVD SnO₂ nanolayers, as confirmed by XPS ion depth profiling studies. The variation of surface chemistry of the Ag-covered L-CVD SnO₂ after air exposure observed by XPS was in a good correlation with the desorption of residual gases from these nanolayers observed in TDS experiments.     

Low-temperature growth of highly crystalline β-Ga2O3 nanowires by solid-source chemical vapor deposition

Growing Ga₂O₃ dielectric materials at a moderately low temperature is important for the further development of high-mobility III-V semiconductor-based nanoelectronics. Here, β-Ga₂O₃ nanowires are successfully synthesized at a relatively low temperature of 610°C by solid-source chemical vapor deposition employing GaAs powders as the source material, which is in a distinct contrast to the typical synthesis temperature of above 1,000°C as reported by other methods. In this work, the prepared β-Ga₂O₃ nanowires are mainly composed of Ga and O elements with an atomic ratio of approximately 2:3. Importantly, they are highly crystalline in the monoclinic structure with varied growth orientations in low-index planes. The bandgap of the β-Ga₂O₃ nanowires is determined to be 251 nm (approximately 4.94 eV), in good accordance with the literature. Also, electrical characterization reveals that the individual nanowire has a resistivity of up to 8.5 × 10⁷ Ω cm, when fabricated in the configuration of parallel arrays, further indicating the promise of growing these highly insulating Ga₂O₃ materials in this III-V nanowire-compatible growth condition.

PACS

77.55.D; 61.46.Km; 78.40.Fy     

Template Route to Chemically Engineering Cavities at Nanoscale: A Case Study of Zn(OH)<Subscript>2</Subscript> Template

A size-controlled Zn(OH)₂ template is used as a case study to explain the chemical strategy that can be executed to chemically engineering various nanoscale cavities. Zn(OH)₂ octahedron with 8 vertices and 14 edges is fabricated via a low temperature solution route. The size can be tuned from 1 to 30 μm by changing the reaction conditions. Two methods can be selected for the hollow process without loss of the original shape of Zn(OH)₂ template. Ion-replacement reaction is suitable for fabrication of hollow sulfides based on the solubility difference between Zn(OH)₂ and products. Controlled chemical deposition is utilized to coat an oxide layer on the surface of Zn(OH)₂ template. The abundant hydroxyl groups on Zn(OH)₂ afford strong coordination ability with cations and help to the coating of a shell layer. The rudimental Zn(OH)₂ core is eliminated with ammonia solution. In addition, ZnO-based heterostructures possessing better chemical or physical properties can also be prepared via this unique templating process. Room-temperature photoluminescence spectra of the heterostructures and hollow structures are also shown to study their optical properties.