Densification and Mechanical Properties of Titanium Diboride with Silicon Nitride as a Sintering Aid

Titanium diboride (TiB₂) was hot-pressed at a temperature of 1800°C, and silicon nitride (Si₃N₄) was added as a sintering aid. The amount of Si₃N₄ that was added had a significant influence on the sinterability and mechanical properties of the TiB₂. When a small amount (2.5 wt%) of Si₃N₄ was added, the Si₃N₄ reacted with titania (TiO₂) that was present on the surface of the TiB₂ powder to form titanium nitride (TiN), boron nitride (BN), and amorphous silica (SiO₂). The elimination of TiO₂ suppressed the grain growth effectively, which led to an improvement in the densification of TiB₂. The formation of SiO₂ also was deemed beneficial for densification. The mechanical properties-especially, the flexural strength-were enhanced remarkably through these improvements in the sinterability and microstructure. On the other hand, when a large amount (greaterthan equal to5 wt%) of Si₃N₄ was added, the mechanical properties were not improved much, presumably because of the extensive formation of a glassy Si-Ti-O-N phase at the grain boundaries.     

The Effect of Surface Oxides During Hot Pressing of TiB2

Hot pressing of TiB₂ has been investigated with particular emphasis on the evolution of secondary phases originating from the initial surface oxide layer on the TiB₂ powders. Carbothermal reduction of the surface oxides during sintering was also investigated by adding carbon to the TiB₂ powder. TiO_{1− x} C _x was shown to be the main secondary phase in hot-pressed TiB₂, and carbon was shown to strongly influence on sintering process and the amount, composition and distribution of the secondary phase TiO_{1− x} C _x . The formation of TiO_{1− x} C _x is discussed in relation to volatile boron oxide, which reacts with the graphite die to produce CO gas, which further may cause transport of carbon into TiB₂ during sintering before pore closure. Finally it was demonstrated that the density could be controlled by addition of carbon to the TiB₂ powder.     

Elastic Properties and Microcracking Behavior of Particulate Titanium Diboride–Silicon Carbide Composites

The spontaneous microcracking of particulate TiB₂–SiC composites is studied as a function of TiB₂ volume fraction. The degree of microcracking was examined by measuring elastic properties from room temperature to 1300°C. The results showed that only one composition contains microcracks. All other compositions did not microcrack regardless of TiB₂ volume fraction. This was attributed to the difference in the sintering aids. In particular, the Al₂O₃ sintering aid needed in these compositions had reacted with SiO₂ to form an amorphous grain boundary phase that allowed residual stresses to relax by viscous flow at moderate to high temperatures. The existence of this amorphous grain boundary phase was directly observed by transmission electron microscopy.     

Liquid–Solid Equilibria in the System NiO–TiO2–SiO2 in the Temperature Range 1430° to 1660°C

Equilibrium relations in the system NiO–TiO₂–SiO₂ in air have been investigated in the temperature range 1430° to 1660°C. The most conspicuous feature of the phase relations is the existence of a cation-excess spinel-type phase, in addition to NiO and NiTiO₃, on the liquidus surface and at subsolidus temperatures down to 1430°C. Three invariant points have been located on the liquidus. There is a peritectic at 1540°C characterized by coexisting NiO ( ss ), spinel( ss ), cristobalite, and liquid of composition 47 wt% NiO, 29 wt% TiO₂, and 24 wt% SiO₂. Two eutectics are present, one at 1480°C, with spinel( ss ), NiTiO₃, cristobalite, and liquid (42 wt% NiO, 43 wt% TiO₂, and 15 wt% SiO₂), as the coexisting phases. The other is at 1490°C with NiTiO₃, rutile, cristobalite, and liquid (32 wt% NiO, 56 wt% TiO₂, and 12 wt% SiO₂). A liquid miscibility gap extends across the diagram from the two bounding binary systems NiO–SiO₂ and TiO₂–SiO₂.     

Factors Affecting the Porosity and Bending Strength of Ti(CN)-TiB2 Materials

This paper describes the effects that the particle size of Ti(CN) and TiB₂ powder, oxygen content of the TiB₂ powder, and Co impurity content in the starting raw materials have on the porosity and bending strength ofTi(CN)-30% TiB₂ materials obtained by ordinary sintering.     

Evolution of Microstructure and V-Shaped Positive Temperature Coefficient of Resistivity of (Pb0.6Sr0.4)TiO3 Materials

The effects of various liquid-phase sintering aids on (Pb_0.6SrO_0.4)TiO₃ ceramics have been investigated. The relationships between electrical properties and microstructures have been scrutinized. It has been found that, among the sintering aids studied, only SiO₂ exhibits a significant effect on the grain growth of (Pb_0.6SrO₄)TiO₃. The optimum firing profiles for sound microstructure and good electrical properties of (Pb_0.6SrO_0.4)TiO₃+ 5.0 mol% SiO₂ have been established. The V-shaped electrical behavior is prominent, and a PTCR jump of about 10^2.9 is observed. The formation of cation vacancies may increase the resistivity of the over-fired specimens. Various milling methods to pulverize the calcined powder and the optimum amount of packing protection powder during sintering are also discussed.     

Combustion Synthesis/Dynamic Densification of a TiB2-SiC Composite

The Ti + 2B exothermic chemical reaction was used in combination with a high-velocity forging step to produce dense TiB₂-(20 vol%)SiC composites. Densities in excess of 96 % of the theoretical were achieved for both SiC particulate and fiber additions. X-ray diffractometry revealed the products of the reaction to be TiB₂ and SiC. The microstructures are composed of spheroidal TiB₂ phase, a highly contiguous SiC binder phase, and an apparent eutectic between TiB₂ and SiC located at regions of preexisting SiC additions. These microstructural features suggest that SiC underwent a peritectic phase transformation. Thermodynamic analysis predicts that at least 41 vol% SiC addition is needed to prevent the loss of the starting morphologies by the peritectic reaction.     

Processing and Properties of TiB2 with MoSi2 Sinter-additive: A First Report

The densification of non-oxide ceramics like titanium boride (TiB₂) has always been a major challenge. The use of metallic binders to obtain a high density in liquid phase-sintered borides is investigated and reported. However, a non-metallic sintering additive needs to be used to obtain dense borides for high-temperature applications. This contribution, for the first time, reports the sintering, microstructure, and properties of TiB₂ materials densified using a MoSi₂ sinter-additive. The densification experiments were carried out using a hot-pressing and pressureless sintering route. The binderless densification of monolithic TiB₂ to 98% theoretical density with 2–5 μm grain size was achieved by hot pressing at 1800°C for 1 h in vacuum. The addition of 10–20 wt% MoSi₂ enables us to achieve 97%–99%ρ_th in the composites at 1700°C under similar hot-pressing conditions. The densification mechanism is dominated by liquid-phase sintering in the presence of TiSi₂. In the pressureless sintering route, a maximum of 90%ρ_th is achieved after sintering at 1900°C for 2 h in an (Ar+H₂) atmosphere. The hot-pressed TiB₂–10 wt% MoSi₂ composites exhibit high Vickers hardness (∼26–27 GPa) and modest indentation toughness (∼4–5 MPa·m^1/2).     

Formation of TiO2(B) Nanocrystallites in Sol-Gel-Derived SiO2-TiO2 Film

TiO₂(B), one of the polymorphs of TiO₂, has been formed by annealing a sol-gel-derived SiO₂-TiO₂ amorphous film on a silicon wafer at 900°C in air. Transmission electron microscopy (TEM) revealed that nanocrystallites with a size of 5-10 nm were dispersed in the amorphous SiO₂ matrix in the film. The X-ray diffraction pattern and lattice fringe spacing in high-resolution TEM images corresponded to those of TiO₂(B). These TiO₂(B) nanocrystallites are probably stable with the presence of surrounding SiO₂ in the film at 900°C, because previous works reported that this phase should be converted to anatase at temperatures higher than 550-700°C.     

Preparation of TiO2 Nanoparticles on Different SiO2 Supports by the Adsorption Phase Technique

The influence of supports on the preparation of TiO₂ nanoparticles by the adsorption phase technique is studied in detailed. Series temperature experiments of two types of supports (named as SiO₂ A and B) were used. Energy-dispersive analysis by X-ray indicates that the concentration of TiO₂ on both supports decreases with temperature increasing. TiO₂ quantity on SiO₂ A decreases sharply between 40° and 60°C, whereas the temperature range for SiO₂ B is between 30° and 50°C. X-ray diffraction (XRD) shows that grain size of TiO₂ particles on two SiO₂ surfaces is all below 7 nm. It is also shown by XRD that particles on SiO₂ A decrease sharply as in the quantity curve of TiO₂, but particles on SiO₂ B all change gradually and TiO₂ particles on SiO₂ B are more uniform in transmission electron spectroscopy. The similarly of both supports is considered to be the reason for the similar changes in Ti concentration, and the different characteristics of the internal/external surface lead to variant quantity and grain size, as well as characteristics of TiO₂.     

Co-Additions of TiO2 and SiO2 Crystalline Fillers to Tailor the Properties of BaO–ZnO–B2O3–SiO2 Glass for Application to Barrier Ribs of Plasma Display Panels

The influence of co-additions of crystalline TiO₂ and SiO₂ fillers (10 wt% addition in total) to BaO–ZnO–B₂O₃–SiO₂ glass on resultant properties was investigated from the viewpoint of applying the material to the barrier ribs of plasma display panels. The substitution of SiO₂ for TiO₂ reduced the dielectric constant significantly, while it maintained high optical reflectance and appropriate coefficient of thermal expansion (CTE) in the case when TiO₂ alone was used. A 5–7.5 wt% SiO₂ addition with 2.5–5 wt% TiO₂ under the constraint of 10 wt% total fillers demonstrated an optical reflectance of about 55%, a CTE of about 8.3 × 10⁻⁶ K⁻¹ (compatible with glass panels), and a dielectric constant of about 7.5, which are promising properties for the barrier rib application.     

Oxidation Behavior of Titanium Boride at Elevated Temperatures

The oxidation behavior of dense TiB₂ specimens was investigated. Hot-pressed TiB₂ with 2.5 wt% Si₃N₄ as a sintering aid was exposed to air at temperatures between 800° and 1200°C for up to 10 h. The TiB₂ exhibited two distinct oxidation behaviors depending on the temperature. At temperatures below 1000°C, parabolic weight gains were observed as a result of the formation of TiO₂( s ) and B₂O₃( l ) on the surface. The oxidation layer comprised two layers: an inner layer of crystalline TiO₂ and an outer layer mainly composed of B₂O₃. When the oxidation temperatures were higher than 1000°C, gaseous B₂O₃ was formed along with crystalline TiO₂ by the oxidation process. In this case, the surface was covered with large TiO₂ grains imbedded in a highly textured small TiO₂ matrix.     

Microstructural Characterization of Superplastic SiO2-doped TZP with a Small Amount of Oxide Addition

The microstructures of 5 wt% SiO₂-doped TZP, 5 wt% (SiO₂+ 2 wt% MgO)-doped TZP, and 5 wt% (SiO₂+ 2 wt% Al₂O₃)-doped TZP are characterized by high-resolution electron microscopy, energy-dispersive X-ray spectroscopy, and electron energy loss spectroscopy. An amorphous phase is formed at multiple grain junctions but not along the grain-boundary faces in these three materials. A small addition of MgO and Al₂O₃ into the SiO₂ phase results in a marked reduction in tensile ductility of SiO₂-doped TZP. This reduction seems to correlate with segregation of magnesium or aluminum ions at grain boundaries and a resultant change in the chemical bonding state.     

Some Roles of MgO and TiO2 in Densification of a Sinterable Alumina

Sinterability of undoped, MgO-doped, and TiO₂-doped Al₂O₃ has been examined by applying reported sintering equations. The order of sinterability was MgO-doped ∼ undoped≪ TiO₂-doped Al₂O₃ in the initial and intermediate stages of sintering, but a relative sintered density at 1600°C for 1 h occurred in the order undoped < TiO₂-doped < MgO-doped AI₂O₃. The dispersion of thermal grooving angles increased in the order MgO-doped < undoped < TiO₂-doped Al₂O₃, The change of sinterability by the dopants is explained in terms of mobility of mass transfer estimated from a densification rate in the initial- and intermediate-stage sintering and of dispersed driving forces of densification and grain growth qualitatively evaluated from the width of the dispersion of thermal grooving angles.     

A Study of the Phase Relations of ZrO2–TiO2 and ZrO2–TiO2–SiO2

The phase relations of the systems ZrO₂–TiO₂ and ZrO₂–TiO₂–SiO₂ were investigated. X-ray diffraction techniques served as the principal means of analysis. The binary system ZrO₂–TiO₂ was found to be one of partial solid solutions with no intermediate compounds. A eutectic point was found to exist at 50 to 55 weight % ZrO₂ and 1600°C. A preliminary investigation of the ternary system ZrO₂–TiO₂–SiO₂, although not extensive, resulted in a better understanding of this system, with a fairly accurate location of some of its boundary lines. A eutectic point was located at 2% ZrO₂, 10% TiO₂, and 88% SiO₂ at approximately 1500°C.     

Preparation and Physical Properties of Radiofrequency-Sputtered Amorphous Films in the System AlPO4–TiO2

Amorphous films in the system AlPO₄–TiO₂ were prepared by an rf-sputtering method, and their physical properties, such as density, refractive index, and thermal expansion coefficient, and the infrared absorption spectra were measured. The thermal expansion coefficient increased linearly with increasing TiO₂ content. The results of the molar refractivity and the infrared absorption spectra indicated that the coordination number of titanium ions in these films is higher than that in SiO₂–TiO₂ glasses with a negative thermal expansion, in which Ti⁴⁺ ions are tetrahedrally coordinated. In order to confirm the coordination state of the titanium ions in these amorphous films, titanium K -band emission spectra were obtained by X-ray emission spectroscopy, revealing sixfold coordination. The higher coordination state of Ti⁴⁺ was considered to account for these amorphous films not exhibiting negative thermal expansion, as in the SiO₂–TiO₂ system.     

Stability of Si3N4 and Liquid Phase(s) During Sintering

Advanced sintering techniques for consolidation of Si₃N₄ powders in the presence of an oxygen-rich liquid phase(s) require high temperatures and usually high nitrogen pressures. A stability diagram is constructed for Si₃N₄ as a function of the partial pressures of nitrogen (P_N2) and silicon (P_Si). High P_N2 (20 to 100 atm) increases the stability of Si₃N₄ and the oxygen-rich liquid phase by reducing the P_Si and P_Si0, respectively. The region of high sinterability is outlined for submicrometer Si₃N₄ powders containing 7 wt% BeSiN₂ and 7 wt% SiO₂ as densification aids .     

Effect of Sintering Aids on Microstructures and PTCR Characteristics of (Sr0.2Ba0.8)TiO3 Ceramics

The effects of liquid-phase sintering aids on the microstructures and PTCR characteristics of (Sr_0.2Ba_0.8)TiO₃ materials have been studied. The grain size of sintered materials monotonically decreases with increasing content of Al₂O₃–SiO₂–TiO₂ (AST). The ultimate PTCR properties with ρ_ht/ρ_rt as great as 10^5.61 are obtained for fine-grain (10-μm) samples, which contain 12.5 mol% AST and were sintered at 1350°C for 1.5 h. The quantity of liquid phase formed due to eutectic reaction between AST and (Sr,Ba)TiO₃ is presumably the prime factor in determining the grain size of samples. The grains grow rapidly at the sintering temperature in the first stage until the liquid phase residing at the grain boundaries reaches certain critical thickness such that the liquid–solid interfacial energy dominates the mechanism of grain growth.     

Grain-Boundary Microstructure and Chemistry of a Hot Isostatically Pressed High-Purity Silicon Nitride

Two high-purity Si₃N₄ materials were fabricated by hot isostatic pressing without the presence of sintering additives, using an amorphous laser-derived Si₃N₄ powder with different oxygen contents. High-resolution transmission electron microscopy and electron energy-loss spectroscopy (EELS) analysis of the Si₃N₄ materials showed the presence of an amorphous SiO₂ grain-boundary phase in the three-grain junctions. Spatially resolved EELS analysis indicated the presence of a chemistry similar to silicon oxynitride at the two-grain junctions, which may be due to partial dissolution of nitrogen in the grain-boundary film. The chemical composition of the grain-boundary film was SiN_xO_y, (x ∼ 0.53 and y ∼ 1.23), and the triple pocket corresponded to the amorphous SiO₂ containing ∼2 wt% nitrogen. The equilibrium grain-boundary-film thickness was measured and found to be smaller for the material with the lower oxygen content. This difference in thickness has been explained by the presence of the relatively larger calcium concentration in the material with the lower amount of SiO₂ grain-boundary phase, because the concentration of foreign ions has been shown to affect the grain-boundary thickness.     

Sintering Behavior and Surface Microstructure of PbO-Rich PbNi1/3Nb2/3O3–PbTiO3–PbZrO3 Ceramics

The sintering behavior and surface microstructure of PbNi_1/3Nb_2/3O₃–PbTiO₃–PbZrO₃ (PNiNb-PT-PZ) ceramics were investigated. The PNiNb-PT-PZ ceramics with the stoichiometric composition and the addition of excess lead oxide (PbO-rich ceramics) were sintered by liquid-phase sintering in accordance with the solution-reprecipitation mechanism at temperatures below the melting point of PbO. The temperature at which the liquid phase forms fell to near the eutectic point of the PbO–Nb₂O₅ and the PbO–TiO₂ system (868°C) with the addition of 5 mol% PbO. As the calcination temperature influenced the sinterability of the stoichiometric PNiNb-PT-PZ ceramic, unreacted PbO was considered to be the source of the liquid phase in the sintering of the stoichiometric powder. The secondary phase was observed at the surface of PbO-rich ceramics and was suggested to be a liquid phase expelled from inside the ceramic. A sintering scheme of PNiNb-PT-PZ ceramics was proposed, and the high sinterability of PNiNb-PT-PZ ceramics was attributed to the low formation temperature of the liquid phase.