280 W output power single-ended amplifier using single-die GaN-FET for W-CDMA cellular base stations

A single-ended amplifier using a single-die GaN-FET was successfully developed for W-CDMA cellular base-station systems. The developed amplifier delivers a peak saturated output power of 280 W with a linear gain of 12.6 dB at a drain voltage of 48 V under 2.15 GHz 3GPP W-CDMA signal input. It is believed that the 280 W output power is the record output power in single-ended amplifiers at 2 GHz band. A high drain efficiency of 29% is also obtained at 8 dB power back off from the saturated output power.     

370 W output power GaN-FET amplifier for W-CDMA cellular base stations

A single-ended amplifier using small packaged GaN-FETs exhibits a record 2.14 GHz W-CDMA output power. The amplifier, composed of paralleled 48 mm gate periphery FET die, delivers a peak saturated output power of 371 W with a linear gain of 11.2 dB at a drain voltage of 45 V under 2.14 GHz 3GPP W-CDMA signal input. The output power density (output power/package size) of 1.1 W/mm/sup 2/ is twice as high as that of the existing over 300 W GaAs-FET amplifiers. A low 5 MHz offset ACLR of -36 dBc with a drain efficiency of 24% is also obtained at 8 dB power back off from the saturated output power.     

X波段300 kW正交场放大器设计

首次提出采用高二次发射系数铂钡合金作为冷阴极,实现了X波段正交场放大器(CFA)宽脉冲和大工作比稳定工作。提出了双螺旋耦合翼片慢波结构与波导之间采用缝隙耦合加切比雪夫阻抗变换器输能结构设计方案。通过对慢波结构及高频系统仿真分析与设计,实现了慢波结构与输能组件间的宽频带良好匹配,电压驻波比及插损特性仿真结果与冷测结果具有很好的一致性。热测结果表明,放大器在1 GHz带宽内脉冲功率大于300 kW,效率大于57%,增益大于14 dB,填补了国内X波段宽带大功率正交场放大器的空白,是当前国际上脉冲宽度最宽、工作比最大的X波段正交场放大器产品。     

Schmitt trigger based single-ended voltage amplifier for ultra-low-voltage supplies

Analog Integrated Circuits and Signal Processing - This work presents a Schmitt Trigger based pseudo-differential single-ended voltage amplifier using a Schmitt Trigger in parallel with a...     

Broadband high-power TRAPATT diode amplifier at S band

This letter describes the use of a coupled TEM line circuit with high-power high-efficiency silicon avalanche diodes to achieve broadband pulsed amplification in S band. An output power of 50 W, with 6 dB gain and 10% instantaneous 3 dB bandwidth centred at 2.7 GHz, has been obtained.     

250 kW CW klystron amplifier for planetary radar

Jet Propulsion Laboratory contracted with Varian Associates to design, build, and deliver replacements for VA-949J klystrons in the X-band planetary radar transmitter on the Goldstone, CA, 70 m antenna. Output power was to be increased from 200 kW to 250 kW CW per klystron, and full DC beam power was to be dissipated in the collector. Replacements were to be made with a minimum of transmitter modifications. Two model VKX-7864A klystrons were subsequently built and delivered. The design of these klystrons and the results of their performance testing are described. The planetary radar transmitter is now operating with these two klystrons     

Ka/Q band GaAs IMPATT amplifier technology

GaAs IMPATT diodes are capable of generating 2 to 3 W simultaneously with 18–22% efficiency in the 33 GHz to 46 GHz frequency band. The design of the amplifier circuits which utilize these devices is discussed. The circuit design is based on a 3-step closed form algorithm. The first step is a passive circuit characterization with an automatic network analyzer. In the second step, a computer is used to generate diode device lines. The third step is load line synthesis for predictable operation. The resulting performance is described. 2 W over a 2GHz bandwidth was achieved simultaneously with a minimum gain of 12 dB.     

A rail-to-rail input/output CMOS power amplifier

A rail-to-rail amplifier that maintains a high common-mode rejection ratio (CMRR) over the whole common-mode range and has a low harmonic distortion despite the use of relatively small output devices is discussed. The circuit, which measures only 0.3 mm² in a 3-μm technology, has a quiescent current consumption of 600 μA and a CMRR larger than 55 dB. It handles up to 4 nF, and can, with a 5-V supply, drive 3.8 V_pp into 100 Ω (0.1% total harmonic distortion at 10 kHz)     

Improved coupled-line microstrip circuit for L and S band oscillators

The coupled-bar microstrip circuit described here utilises a TRAPATT diode, and is ideally suited for systems applications such as i.f.f. transponder-transmitter sources and airborne altimeter sources. It is compact and rugged and allows high-efficiency operation. This circuit has delivered 150 W with 30% efficiency at L band, 150 W with 26% efficiency at 3.5 GHz, and 120 W with 19% efficiency at 3.85 GHz. The devices were operated with 0.5 ?s pulses up to 1% duty cycle in a near jitterfree operation.     

低压工作的轨到轨输入／输出缓冲级放大器

本文提出了一种低压工作的轨到轨输入／输出缓冲级放大器。利用电阻产生的输入共模电平移动,该放大器可以在低于传统轨到轨输入级所限制的最小电压下工作,并在整个输入共模电压范围内获得恒定的输入跨导;它的输出级由电流镜驱动,实现了轨到轨电压输出,具有较强的负载驱动能力。该放大器在CSMCO．6-μmCMOS数模混合工艺下进行了HSPICE仿真和流片测试,结果表明：当供电电压为5V,偏置电流为60uA,负载电容为10pF时,开环增益为87．7dB,功耗为579uw,单位增益带宽为3．3MHz;当该放大器作为缓冲级时,输入3VPP10kHz正弦信号,总谐波失真THD为53．2dB。     

S波段15 kW连续波磁控管注入锁频实验研究

注入锁频是磁控管相干功率合成的基础,本文开展了15 kW磁控管的注入锁频实验,研究了注入微波功率与可牵引带宽之间的关系。实现了15 kW磁控管注入锁频,分析了不同注入功率下磁控管可牵引带宽。实验结果表明,磁控管注入锁频牵引带宽随注入功率增大而增加,在165 W注入功率下牵引带宽达到5 MHz。该15 kW磁控管可用于大功率微波相干功率合成,为多支大功率磁控管进行功率合成研究奠定了基础。     

Compact triple band antenna for WLAN/ WiMAX applications

A low profile printed antenna with triple band operation is presented for simultaneous use in wireless local area network (WLAN) and worldwide interoperability for microwave access (WiMAX) applications. The antenna consists of a rectangular radiating element fed asymmetrically by a 50 Omega microstrip line and a shaped trapezoidal ground plane. Rectangular horizontal strips are attached to the radiation element to form different current paths which make the antenna resonate in WLAN and WiMAX frequency bands. The antenna operates in dipole configuration outlining overall dimensions of 38 times 30 times 0.8 mm³.     

Packaged single-ended CMOS low noise amplifier with 2.3 dB noise figure and 64 dBm IIP/sub 2/

A single-ended low noise amplifier (LNA) implemented in a foundry 0.18 /spl mu/m CMOS process is tested on a PC board using the chip-on-board technique. The measured S/sub 11/ and S/sub 22/ are less than -10 dB over 5.15-5.35 GHz, which is the lower subband of UNII and HIPERLAN/2 band. The measured noise figure is 2.0 dB and power gain is 15.5 dB at 5.15 GHz, while drawing 5.8 mA of current from a 1.8 V supply. The measured IIP/sub 2/ is greater than 64 dBm. This extremely high IP/sub 2/ is due to the tuned response of the LNA. The LNA is suitable for WLAN applications in the lower UNII and HIPERLAN/2 subband.     

D类音频功放芯片输出级电路的设计

在D类功放中,输出功率管有比较大的容性负载,会严重影响芯片的输出效能,本文基于Winbond0．5μCMOS工艺设计了一种适用于D类音频功放的驱动电路,在前置驱动级加入时钟控制信号,实现逻辑控制功能;合理设置功率管输出的死区时间,避免了功率管的同时导通,提升了电路的工作效率、改善了总谐波失真（THD）和毛刺电压。     

Fully-integrated GaAs HBT power amplifier MMIC with high linear output power for 3 GHz-band broadband wireless applications

A high linear output power two-stage GaAs heterojunction bipolar transistor (HBT) power amplifier MMIC is reported. The input, interstage and output matching circuits are designed for wideband and low-voltage operations, and are fully integrated into an MMIC chip. The power amplifier measured with 54 Mbits 64-QAM OFDM signals at a collector supply voltage of 3.3 V showed linear output power of higher than 23.2 dBm at an error vector magnitude of 3.0% in a frequency range 3.3-3.6 GHz     

L.S.A. microstrip phase-locked power amplifier

A distributed amplifier structure is described using the l.s.a. mode of operation in a microstrip transmission line where gallium arsenide replaces the dielectric. The amplifier gain against frequency is given, and various practical design criteria are discussed.     

Highly linear amplifier for high gain applications

A novel amplifier structure that compensates nonlinearities by means of a special type of feedback is proposed. The high linearity performance is combined with a high gain that is unreachable with the conventional feedback structure. A practical configuration of the structure is given as an improvement over both a conventional feedback amplifier and a typical feedforward amplifier. Experimental results are provided to verify the high linear characteristic of the practical structure     

Ultrahigh-efficiency power amplifier for space radar applications

This paper describes a broad-band switch mode power amplifier based on the indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier combines the alternative Class-E mode of operation with a harmonic termination technique that minimizes the insertion loss of matching circuitry to obtain ultrahigh-efficiency operation at X-band. For broad-band Class-E performance, the amplifiers output network employs a transmission line topology to achieve broad-band harmonic terminations while providing the optimal fundamental impedance to shape the output current and voltage waveforms of the device for maximum efficiency performance. As a result, 65% power-added efficiency (PAE) was achieved at 10 GHz. Over the frequency band of 9-11 GHz, the power amplifier achieved 49%-65% PAE, 18-22 dBm of output power, and 8-11 dB gain at 4 V supply. The reported power amplifier achieved what is believed to be the best PAE performance at 10 GHz and the widest bandwidth for a switch-mode design at X-band.     

New low-noise output amplifier for high-definition CCD image sensor

A new low-noise charge-coupled-device (CCD) output amplifier, the RJG detector, has been developed. The RJG detector incorporates a JFET which has an electrically floating ring-junction gate (RJG). The operating principle of the amplifier is that signal charges, transferred from the CCD into the RJG, directly modulate the drain current in the detection JFET. The performance of the detector was evaluated by operating test devices under a 37-MHz clock frequency, which is the same frequency as that for the horizontal CCD operation in the recently developed 2-million-pixel high-definition CCD image sensor. It was found that 1/f noise was reduced by introducing the JFET and that reset noise was completely eliminated by achieving complete charge transfer through the reset operation. As a result, input referred noise equivalent electrons within the 18.5-MHz baseband were reduced to 17 (electrons)     

A CMOS readout amplifier for instrumentation applications

An integrated readout amplifier for instrumentation applications in smart sensor systems is presented. A fully integrated CMOS version of such an amplifier has been developed using switched-capacitor techniques. The amplifier system provides differential input capability, programmable amplification, clock generation, and low-pass filtering on the chip. The output signal is continuous in time and the system can be used without any of the special precautions necessary for sampled-data circuits. Emphasis was put on high PSRR (-63 dB at DC), low noise (10-μV_rms input equivalent wideband noise) and offset, low harmonic distortion, and small amplification error (<0.06% at 4 V_pp). To cover a large field of applications, only slightly different realizations can be used for capacitive sensors as well as for resistive sensor bridges