Branching ratio of rare decay B0(Bs)→γνν

The three-body decay B⁰(B_s)→γνν can occur via penguin and box diagrams in the Standard Model (SM). These channels are useful to determine the decay constant f_B (f_Bs) and B (B_s) meson wave function. Using the B meson wave function determined in hadronic B (B_s) decays, we calculate and get the branching ratio of order 10^－9 and 10^－8 for B⁰ and B_s decay, respectively. They agree with previous calculations.     

Experimental Prospects of the B_c Studies of the LHCb Experiment

The experimental prospects of the Bc studies of the LHCb experiment are discussed. Production rates of Bc mesons at different center-of-mass energies are estimated with the dedicated generator BCVEGPY. Theoretical estimates and experimental measurements of the Bc± inclusive production cross section at /s =1.96 TeV are compared. The possibilities of studying Bc production, Bc spectroscopy, Bc decays and CP violation in Bc decays in the LHCb experiment are evaluated.     

室温下压致铁钴镍合金的bcc→hcp相变

 本文采用高压X光衍射方法在金刚石对顶压砧中在位地（in situ）研究了Fe₆₈Co₂₄Ni₈（wt%）合金在室温下的压致bcc→hcp结构相变和直到40.5 GPa的等温压缩行为。实验结果表明该合金在常压下为bcc结构，晶格常数a₀=(0.287 0±0.000 1) nm，体积V₀=(7.119±0.007) cm³/mol，密度ρ₀=(7.981±0.008) g/cm³；在20.9 GPa附近出现bcc→hcp结构相变，两相共存压力区约10 GPa，在此区域内有晶面间距d(002)_hcp=d(110)_bcc，且原子平面(002)_hcp//(110)_bcc，hcp相比bcc相体积减小(0.33±0.02) cm³/mol；高压相hcp结构的晶格参数比值c/a=1.608±0.004；相变后原子配位数的增加使得hcp相(002)平面内及(002)平面间的最近邻原子间距比bcc相最近邻原子间距分别增大约1.6%和0.5%；用Murnaghan状态方程对实验数据进行最小二乘法拟合，得到bcc相B₀=(130±13) GPa，B₀'=12.6±0.5；hcp相V₀=(6.62±0.04) cm³/mol，B₀=(243±21) GPa，B₀'=6.8±0.3；对于该合金的bcc→fcp相变时的结构转变机制做了详细的讨论。     

压力对GdoBr:Eu晶场参数的影响

 在室温下测量了GdoBr:Eu的常压和高压荧光谱，光谱范围在13 000~21 500 cm^-1之间，压力至12 GPa。由光谱数据得到了Eu³⁺晶场能级随压力的变化曲线。⁷F_0～5能级随压力的变化规律比较复杂，而⁵D_0~2各能均随压力的升高几乎线性地降低。在基态谱项⁷F的49个状态上进行了晶场拟合计算，所得常压下的5个非零晶场参数分别为：B₀²＝-1 124.0 cm^-1，B₀⁴＝-969.6 cm^-1，B₄⁴＝827.9 cm^-1，B₀⁶＝889.6 cm^-1，B₄⁶＝377.0 cm^-1。高压下的计算结果表明，B₀⁴、B₀⁶这两个晶场参数随压力的增加而增大，B₄⁶随压力的增加而减小，而B₀²、B₄⁴随压力的变化有些起伏。晶场强度在8 GPa以下随压力增加而减小，其后开始变强。     

CuO在高压下的状态方程、电学性质与相变

 在活塞－圆筒式高压装置上研究了CuO在4.5 GPa内的p-V关系，给出了它的状态方程、格临爱森参数γ₀、体积模量B₀以及B₀的压力导数B₀'。在金刚石压砧装置上，采用我们建立的电阻、电容测量方法研究了CuO在22 GPa内电阻、电容与压力的关系。实验结果表明，CuO的电阻和电容在一些压力下都发生了突然的变化。这些变化可能与CuO内部的电子结构和晶界处的结构状态变化有关。     

First-Principles Calculations of Electronic Structures of New Ⅲ-Ⅴ Semiconductors： BxGa1-xAs and TlxGa1-xAs alloys

We investigate the electronic structures of new semiconductor alloys BxGa1-xAs and TlxGa1-xAs, employing first-principles calculations within the density-functional theory and the generalized gradient approximation. The calculation results indicate that alloying a small TI content with GaAs will produce larger modifications of the band structures compared to B. A careful investigation of the internal lattice structure relaxation shows that significant bond-length relaxations takes place in both the alloys, and it turns out that difference between the band-gap bowing behaviours for B and TI stems from the different impact of atomic relaxation on the electronic structure. The relaxed structure yields electronic-structure results, which are in good agreement with the experimental data. Finally, a comparison of formation enthalpies indicates that the production Tlx Ga1-xAs with TI concentration of at least 8% is possible.     

Structural Stability of CaCuMn6O12 under High Pressure and Low Temperature

In situ high pressure energy-dispersive x-ray synchrotron radiation diffraction and resistance experiments are carried out on CaCuMn6O12. Its crystal structure is stable in the measured pressure range. The equation of state of CaCuMn6O12 is obtained from the V/Vo - P relationship （V and Vo are the volumes at pressure P and at atmosphere）. The bulk modulus Bo is calculated based on the Birch-Murnaghan equation. Low temperature x-ray diffraction shows no phase transition occurring down to 160K.     

Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Property by Sulfuration and NH3 Thermal Nitridation

Fermi level pinning at the interface between high-h gate dielectric and GaAs induced by unstable native oxides is a major obstacle for high performance GaAs-based metal-oxide-semiconductor （MOS） devices. We demonstrate the improved Al2O3/GaAs interracial characteristics by （NH4）2S immersion and NH3 thermal pretreatment prior to A1203 deposition. X-ray photoelectron spectroscopy （XPS） analysis confirms that sulfuration of GaAs surface by （NH4 ）2S solution can effectively reduce As-O bonds while Ga-O bonds and elemental As still exist at Al2O3 /GaAs interface. However, it is found that N incorporation during the further thermal nitridation on sulfurated GaAs can effectively suppress the native oxides and elemental As in the sequent deposition of Al2O3. Atomic force microscopy （AFM） shows that the further thermal nitridation on sulfurated GaAs surface can also improve the surface roughness.     

Pure annihilation type decays B0→Ds- K2*+ and Bs→Da2 in perturbative QCD approach

We calculate the branching ratios of pure annihilation type decays B⁰→D_s^- K₂^*+ and B_s→Da₂ using the perturbative QCD approach based on k_T factorization. The branching ratios are predicted to be (60.6_{-16.5-10.4-2.1}^{+17.3+4.3+3.2} )× 10^-6 for B⁰→D_s^- K₂^*+, (1.1_-0.4-0.2-0.1^+0.4+0.1+0.1)×10^-6 for B_s→D⁰a₂⁰ and (2.3_-0.8-0.4-0.1^+0.8+0.2+0.1)×10^-6 for B_s→D^-a₂⁺. They are large enough to be measured in the ongoing experiment. Due to the shortage of contributions from penguin operators, there are no direct CP asymmetries for these decays in the Standard Model. We also derive simple relations among these decay channels to reduce theoretical uncertainties for the experiments to test the accuracy of theory and search of new physics signal.     

Mechanism of Pseudogap Detected by Electronic Raman Scattering： Phase Fluctuation or Hidden Order？

We study the electronic Raman scattering in the cuprates to distinguish the two possible scenarios of the pseudogap normal state. In one scenario, the pseudogap is assumed to be caused by phase fluctuations of the preformed Cooper pairs. We find that pair-breaking peaks appear in both the B1g and B2g Raman channels, and they axe smeared and tend to shift to the same energy with the increasing strength of phase fluctuations. Thus both channels reflect the same pairing energy scale, irrespectively of the doping level. In another scenario, the pseudogap is assumed to be caused by a hidden order that competes with the superconducting order. As an example, we assume that the hidden order is the d-density-wave （DDW） order. We find analytically and numerically that in the DDW normal state there is no Raman peak in the B2g channel in a tight-binding model up to the second nearest-neighbor hopping, while the Raman peak in the Big channel reflects the energy gap caused by the DDW order. This behavior is in agreement with experiments in the pseudogap normal state. To gain further insights, we also calculate the Raman spectra in the DDW＋SC state. We study the doping and temperature dependence of the peak energy in both channels and find a two-gap behavior, which is in agreement with recent Raman experiments. Therefore, our results shed light on the hidden order scenario for the pseudogap.     

Branching ratio and CP asymmetry of Bs→K0*(1430)η(') decays in the PQCD approach

In the two-quark model supposition for K₀^*(1430), which can be viewed as either the first excited state (Scenario Ⅰ) or the lowest lying state (Scenario Ⅱ), the branching ratios and the direct CP-violating asymmetries for decays B_s⁰→K₀^*0(1430)η^(') are studied by employing the perturbative QCD factorization approach. We find the following results: (a) The CP averaged branching ratios of B_s⁰→K₀^*0(1430)η and B_s⁰→K₀^*0(1430)η' are small and both in the order of 10^-7. If one views K₀^*(1430) as the lowest lying state, B (B_s⁰→K₀^*0(1430)η)≈3.9×10^-7 and B (B_s⁰→K₀^*0(1430)η')≈7.8×10^-7. (b) While the direct CP-violating asymmetries of these two decays are not small: if we still take the parameters of K₀^*(1430) in scenario Ⅱ, A_CP^dir (B_s⁰→K₀^*0(1430)η)≈56.2% and A_CP^dir (B_s⁰→K₀^*0(1430)η')≈2.4%. (c) The annihilation contributions will play an important role in accounting for future data, because both the branching ratios and the direct CP asymmetries of these two decays are sensitive to the annihilation type contributions.     

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Two hexagonal GaN epilayers （samples A and B） with multiple buffer layers and single buffer layer are grown on Si （111） by metal-organic vapour phase epitaxy （MOVPE）. From the results of Rutherford backscattering （RBS）/channeling and high resolution x-ray diffraction （HRXRD）, we obtain the lattice constant （a and c） of two GaN epilayers （aA = 0.3190 nm, cA = 0.5184 nm and aB = 0.3192 nm, CB = 0.5179 nm）, the crystal quality of two GaN epilayers （ ХminA=4.87%, ХminB =7.35% along 〈1-↑213〉 axis） and the tetragonal distortion eT of the two samples along depth （sample A is nearly fully relaxed, sample B is not relaxed enough）. Comparing the results with the two samples, it is indicated that sample A with multiple buffer layers have better crystal quality than sample B with a single buffer layer, and it is a good way to grow GaN epilayer on Si （111） substrates using multiple buffer layers to improve crystal quality and to reduce lattice mismatch.     

First-Principles Studies on Properties of Boron-Related Impurities in c-BN

We investigate, by first-principles calculations, the pressure dependence of formation enthalpies and defective geometry and bulk modulus of boron-related impurities （VB, Cs, NB, and OB） with different charged states in cubic boron nitride （c-BN） using a supercell approach. It is found that the nitrogen atoms surrounding the defect relax inward in the case of CB, while the nitrogen atoms relax outward in the other cases. These boron-related impurities become much more stable and have larger concentration with increasing pressure. The impurity CB^＋1 is found to have the lowest formation enthalpy, make the material exhibit semiconductor characters and have the bulk modulus higher than ideal c-BN and than those in the cases of other impurities. Our results suggest that the hardness of c-BN may be strengthened when a carbon atom substitutes at a B site.     

KH2PO4和(CH3NHCH2COOH)CaCl2在高压下的状态方程与相变

 在活塞圆筒式p-V关系测量装置上，研究了KH₂PO₄（KDP）和(CH₃NHCH₂COOH)CaCl₂［Tris-sarcosine calcium chloride（TSCC）］在室温下、4.5 GPa内的p-V关系。实验结果表明：KDP在2.1 GPa左右有一个相变；TSCC在0.8 GPa和3.2 GPa左右各有一个相变。本工作还给出了它们在相变前后的状态方程，以及它们的格临爱森参数γ₀、体积模量B₀和B₀的压力导数B₀'。     

Properties of a New Nonlinear Optical Crystal CdZn2B2O6

Cadmium dizinc diborate （CdZn2B2O6） single crystals have been grown for the first time. The crystal structure of CdZn2B2O6 is the same as that of the Cd3Zn3B4O12. The x-ray diffraction, infrared and Raman spectra, differential scanning calorimetry analysis and density indicate that the physical and chemical properties of both crystals are very similar. Especially, the nonlinear optical coefficients of CdZn2B2O6 and Cd3Zn3B4O12 crystals are 2.6 and 2.4 times as large as that of KH2PO4 crystal respectively. Chemical etching experiments indicated that these crystals are very stable in neutral solution and not hygroscopic in air at room temperature.     

BaCuO2.5在高压下的状态方程与电学性质

 在活塞-圆筒式高压装置上研究了BaCuO_2.5在4.5 GPa内的p-V关系,给出了其状态方程、Grüneisen参数γ₀、零压体弹模量B₀以及B₀的压力导数B′₀。并在金刚石压砧装置（DAC）上测量了样品的电阻、电容随压力变化的关系,结果表明在0~20 GPa内没有发生相变。     

Influence of Rare-Earth Substitution for Iron in FeCrMoCB Bulk Metallic Glasses

The effects of rare earth addition on the glass forming ability of Fe50-xCr15Mo14C15B6Mx （x =0, 2 and M=Y, Gd） bulks and ribbons are studied. The thermal and structural properties of the samples are measured by a combination of differential scanning calorimetry （DSC）, x-ray diffraction and scanning electron microscopy. Chemical compositions are checked by energy dispersive spectroscopy analysis. The copper mold casting technique leads to a fully amorphous structure up to 2mm only for compositions containing Y or Gd. In the case of ribbons, a fully amorphous phase is observed for all the compositions. The roles of Y and Gd are discussed on the basis of melting behavior analyzed by high-temperature DSC. Such elements act as oxygen scavengers, avoiding heterogeneous nucleation.     

50 GPa下NiO等温状态方程的高压X光研究

 本文采用在位的（in situ）高压X光衍射方法研究了近50 GPa和室温下三方结构NiO的等温压缩行为，并用Murnaghan状态方程对实验值进行了最小二乘法拟合，得到的NiO室温状态方程的相应参量分别为：B₀=223 GPa，B₀'=4.21。在室温压力范围内没有观察到第一类结构相变。NiO在六方指标下的轴比c/a随压力的变化在实验压力范围内可用c/a=2.450~1.569×10^-3（GPa）近似描述。     

纤锌矿氮化硼及其应用的研究（Ⅱ）——纤锌矿型氮化硼的等温状态方程

 使用两种不同的高压在位X光衍射法，研究了用爆炸法合成的纤锌矿型氮化硼（wBN）在室温下的等温状态方程。一种方法是用转靶X光角色散粉末衍射法，研究了它在0~40 GPa压力范围内的等温压缩行为。结果表明，wBN在0~40 GPa的压力范围内是稳定的，没有发生结构相变。通过p-V数据对Murnaghan方程拟合，得到wBN在p=0时的等温体模量B₀=(335±34) GPa及其对压力的一阶导数B₀'=4.21；另一种是用同步辐射X光能量色散衍射法，研究了它在0~25 GPa压力范围内的等温状态方程。实验中，使用了改进的自动加压的DAC高压装置，此装置保证了实验中衍射角θ₀固定不变。将获得的p-V数据仍用Murnaghan方程拟合，得到wBN在p=0时等温体模量B₀=(280±56) GPa，及其B₀'=4.39。     

Perturbative QCD Study of B(s)→φρ Decays

We study B_(s)→φρ decays in a perturbative QCD approach based on k_T factorization. In this approach, we calculate factorizable and non-factorizable contributions, there are no annihilation contributions due to quark content. We get the branching ratios and polarization fractions for B_(s)→φρ decays. Our predictions are consistent with the current experimental data.