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本报道了Au/a-Ge双层膜的分形晶体现象,并首次测量了Au/a-Ge双层膜分形晶化的V-I特性,实验结果表明:分表晶化后的Au/a-Ge双层膜具有反常的非线性V-I特征,应用隧道结网络(RTJN)模型对实验结果给予了合理的解释。 相似文献
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研究了Au/a-Ge双层膜退火后形成花样的分布及其分维。单个分形枝叉的疏密可用简单分维定量描述。多重分形谱可以很好地定量描述了多个分形区的分布的变化,分形花样稀少且分布不均匀的图形对应的分形谱较宽。经100℃退火60min后薄膜中出现分布不均匀的很少的分形花样,经120℃退火60min后分形花样布满整个薄膜表面,相应的分形谱宽度△α从3.70减小到0.23。 相似文献
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Si/Ag/Si和Si/Au/Si薄膜分形晶化的TEM和EDS研究 总被引:1,自引:1,他引:0
本文利用透射电镜(TEM)和X射线能谱(EDS)对a-Si:H/Ag/a-Si:H和a-Si:H/Au/a-Si:H薄膜的分形晶化行为进行了研究。结果表明薄膜的分形晶化强烈依赖于退火条件,分形的形成可用随机逐次触发形核和生长(RSNG)来加以解释。尽管膜内存在明显的互扩散,Si分形区厚度与均匀基体区厚度相近。但在a-Si:H/Ag/a:Si:H膜中存在部分较大的Ag晶粒凸出膜面。 相似文献
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对AlxGa1-xAs/GaAs异抽面太阳电池经1-MeV电子辐照前后的性能变化进行实验研究和数值拟合分析,讨论了电池性能衰退的主要原因,并提出了如何提高AlxGa1-xAs/GaAs异质面太阳电池的抗电子辐照能力的方法。 相似文献
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本文提出了以各子电池的载波子输运方程为基础、用串联等效的方法模拟多结电池的J-V特性,并用该方法模拟分析了P/I界面态。P/I缓冲层带隙梯度对Glass/TCO/a-Si/a-Si/Al双结电池光电特性的影响,各子电池本征层为常数带隙的Glass/TCO/a-Si/a-SiGe/Al三结电池的光电特性及其所存在的优势。 相似文献
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采用Ge/Ni/TiWN/Au多层金属化结构与n-GaAs的固-固相反应来获得理想的欧姆接触性能。经600℃热处理或获得7.3×10^-^7Ω.cm的最小接触电阻率,俄歇能谱分析表明TiWN与Au之间,以及它们与GaAs界面之间的互扩散较小,具有良好的热稳定性。 相似文献
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本文在JEM—1000高压电镜中对Ge/Au和Ge/Ag双层膜进行了加热动态观测,并与真空退火的结果进行了比较。结果表明,双层膜中非晶Ge的晶化不仅取决于加热温度,而且取决于加热时间。加热条件的不同引起不同的晶化机制。本文讨论了非晶Ge晶化时等轴状缩聚区的形成与长大,并提出了这类区域内的能量平衡条件。 相似文献
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Auger depth profiling, electron probe microanalysis, electron beam induced current and conventional scanning electron microscopy have been used to study the inhomogeneous reaction which takes place during the alloying of evaporated AuGe films on (100), n-type GaAs. These measurements have been correlated with I–V and C–V data taken for heat treatment below the AuGe eutectic temperature (360°C) and specific contact resistance measurements above 360°C.The picture which emerges is that of the key role of the germanium in the metallurgical reaction, in addition to its accepted role as the n+ dopant. A simple metallurgical model is proposed which is based on the AuGe being the main reactive system at the interface responsible for the formation of the rectangular particles which are the pathways for the current. Minimum contact resistance correlates with the maximum growth of these particles. 相似文献
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H. Takiguchi Z. Yoshikawa H. Miyazaki Y. Okamoto J. Morimoto 《Journal of Electronic Materials》2010,39(9):1627-1633
Amorphous Si-Ge-Au thin films exhibit high thermoelectric power. To understand the role of Au in the thermoelectric properties,
we studied the structural and thermoelectric properties of Si/Au and Ge/Au thin films. Samples were prepared by electron beam
evaporation. Au was found to have two important roles. One is as a carrier source. Therefore, Au composition influences thermoelectric
properties. The other role is that Au causes the crystallization of Si and Ge at lower temperature. The grain size ranged
from ten to a few tens of nanometers. We conclude that the fine structure is important for high thermoelectric performance. 相似文献
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We have investigated and compared the characteristics of Au:Ge, Ni/Au:Ge and Au/Ni/Au:Ge ohmic contact metallizations to ion-implanted and epitaxial n-GaAs layers on semi-insulting substrates. Auger depth profiles of ohmic contacts and SEM of surface microstructures have provided significant insight as to the nature and degradation mechanism of ohmic contacts with aging. An electrolytic tank model with distributed resistors representing nodular or cluster form contacts has been successfully used to understand the effects of non-uniform ohmic contacts. A small degree of change in the semiconductor sheet resistance in the gaps between contacts, with aging at an elevated temperature, has been attributed to possible lateral surface diffusion of Au in the Au:Ge contacts and Ge in the Ni/Au:Ge and Au/Ni/Au:Ge contacts. 相似文献
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《Materials Science in Semiconductor Processing》2007,10(4-5):150-154
Low-temperature (∼400 °C) metal-induced crystallization of hydrogenated amorphous Si0.5Ge0.5 thin films using Au solution has been investigated by X-ray diffraction, Raman spectra, scanning electron microscopy and atomic force microscopy. It was shown that Au solution significantly promotes the crystallization of the films at low temperatures. The effects of annealing temperature and concentration of the Au solution on the structure and morphology of the films were analyzed. The increase in crystallinity was observed with increasing the annealing temperature. The Raman shifts of Ge–Ge and Si–Ge peaks with the annealing temperature were also discussed. 相似文献
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与常用电子陶瓷薄膜技术相比,MOCVD技术具有薄膜化学成分、结晶结构和氧化程度易控制,沉积温度低,沉积速率高,薄膜的致密性、均匀性和台阶覆盖性好,可理想生长多组元和多层结构的功能金属氧化物薄膜,能直接由实验室转入规模生产及与硅的大规模集成工艺兼容等优点。应用自制设备及MOCVD技术,分别在高掺杂硅片和有透明导电膜玻璃的基片上生长了TiO2薄膜。测得的1mmAu圆点/TiO2薄膜/p+-Si衬底样品的I-V和C-V特性,清楚地给出了MIS结构的行为。淀积在透明导电膜玻璃上的TiO2薄膜有电致变色现象。 相似文献
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Jie Li Wenbo Hu Qiang Wei Shengli Wu Xing Hua Jintao Zhang 《Journal of Electronic Materials》2017,46(3):1466-1475
As a type of electron-induced secondary electron emitter, MgO/Au composite thin film was prepared by reactive magnetron sputtering of individual Mg target and Au target, and the effects of key process parameters on its surface morphology and secondary electron emission (SEE) properties were investigated. It is found that to deposit a NiO buffer layer on the substrate is conducive to the subsequent growth of MgO grains owing to the lattice matching. The gold addition can raise the electrical conductivity of MgO film and further suppress the surface charging. However, the gold deposition would interfere with the MgO crystallization and increase the surface roughness of MgO/Au film. Therefore, MgO/Au composite thin film with a NiO buffer layer and proper deposition times of MgO and Au can achieve superior SEE properties due to good MgO crystallization, low surface roughness and reasonable electrical conductivity. The optimized MgO/Au composite thin film has a higher SEE coefficient and a lower 1-h SEE degradation rate under electron beam bombardment in comparison with MgO film. 相似文献
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用扫描电镜(SEM)对厚度不同的多孔硅膜的微结构进行了研究。对于23μm厚的多孔硅膜,其横截面微结构好似海底生长的海藻;而对于6μm厚的多孔硅膜,其表面微结构则像龟壳上的裂纹。通过对在不同放大倍数情况下拍摄的多孔硅的SEM图片进行分析,结果表明多孔硅薄膜的这两种微结构都具有分形特征,而且其分形维数为2.3~2.6。利用扩散限制凝聚模型(diffusion limited aggregation)对这两种微结构的形成过程进行了模拟。 相似文献