基于遗传算法的30.4 nm多层膜设计

阐述了用遗传算法设计周期和非周期多层膜的原理和实现过程,完成了30.4 nm Mg/SiC周期和非周期多层膜设计,研究了遗传算法中不同种群数和多层膜膜厚取值范围对优化结果的影响.计算发现,种群数的恰当选取是使算法快速达到或逼近最优解的前提,膜厚取值范围的合理选择是提高算法效率的关键.设计得到入射角10°的周期多层膜和15°~22°范围内的宽角多层膜在波长30.4 nm处的反射率依次为56.57%与39.96±0.29%,5°入射的双功能多层膜在波长30.4 nm和58.4 nm处的反射率分别为54.1%和0.1%.结果表明遗传算法也是一种很好的多层膜设计方法.     

磁控溅射制备横向梯度分布的Mo/Si周期多层膜

 采用磁控溅射方法在Si基板上镀制了横向梯度分布的Mo/Si周期多层膜。以X射线掠入射反射测量了横向梯度多层膜的膜系结构,在基板65 mm长度范围内,多层膜周期从8.21 nm线性减小到6.57 nm,周期梯度为0.03 nm/mm。国家同步辐射实验室反射率计的反射率测试结果表明：该横向梯度分布周期多层膜上不同位置,能反射在13.3~15.9 nm波段范围内不同波长的极紫外光,反射率为60%~65%。     

高反射率Mo/B4C多层膜设计及制备

 运用遗传算法优化设计了Mo/B₄C多层膜结构。入射光入射角度取10°时,设计的理想多层膜膜对数为150,周期为3.59 nm,Gamma值（Mo膜厚与周期的比值）为0.41,峰值反射率为33.29%。采用恒功率模式直流磁控溅射方法制作Mo/B₄C多层膜。通过在Mo/B4C多层膜与基底之间增加15 nm厚的Cr粘附层,提高多层膜与基底的粘附力。另外,还采用调整多层膜Gamma值的方法减小其内应力,调整后多层膜结构周期为3.59 nm, Mo膜厚1.97 nm, B4C膜厚1.62 nm,峰值反射率26.34％。制备了膜对数为150的Mo/B₄C膜并测量了其反射率,在波长7.03 nm处,Mo/B₄C多层膜的近正入射反射率为21.0％。最后对测量结果进行了拟合,拟合得到Mo/B₄C多层膜的周期为3.60 nm,Gamma值0.60,界面粗糙度为0.30 nm。     

非周期多层膜Kirkpatrick-Baez显微镜成像

从光线传播的角度分析了非周期多层膜Kirkpatrick-Baez(KB)显微镜的成像性能,并与单层膜KB显微镜、周期多层膜KB显微镜进行了对比。与单层膜KB显微镜相比,多层膜KB显微镜提高了工作掠入射角度,在同样分辨力和集光效率要求下具有更大的视场。周期多层膜KB显微镜的反射率和能量分辨本领高于非周期多层膜KB显微镜,但非周期多层膜元件具有较大的角度带宽和均一的反射率,克服了周期多层膜KB显微镜视场范围和像场均匀性的不足。在此基础上,制备了中心角度1.133 0°的非周期多层膜反射镜元件,以8 keV能量的X射线光管为背光源进行了KB显微镜成像实验,实验结果与理论分析一致。     

在19.5 nm处高反在30.4 nm处抑制的双功能薄膜

 研究了极紫外波段的双功能光学元件。采用周期膜叠加的思想,运用遗传方法优化设计了在19.5 nm处高反,在30.4 nm处抑制的双功能多层膜。采用磁控溅射技术制备了多层膜,利用X射线衍射仪测试了多层膜的结构,在国家同步辐射实验室测试了双功能多层膜的反射特性。结果表明：制备出的双功能膜性能与设计相符,在入射角13°,19.5 nm处的反射率达到33.3%,接近传统的19.5 nm周期高反膜的反射率,并且在30.4 nm附近将反射率由1.1%降到9.6×10^-4。     

4.48 nm正入射软X射线激光用Cr/C多层膜高反射镜的研制

针对4.48nm类镍钽软X射线激光及其应用实验,设计制备了工作于这一波长的近正入射多层膜高反射镜。选择Cr/C为制备4.48nm高反射多层膜的材料对,通过优化设计,确定了多层膜的周期、周期数以及两种材料的厚度比。模拟了多层膜非理想界面对高反射多层膜性能的影响。采用直流磁控溅射方法在超光滑硅基片上实现了200周期Cr/C多层膜高反射镜的制备。利用X射线衍射仪测量了多层膜结构,在德国BessyⅡ同步辐射上测量了在工作波长处多层膜反射率,测量的峰值反射率达7.5%。对衍射仪测量的掠入射反射曲线和同步辐射测量的反射率曲线分别进行拟合,得到的粗糙度和厚度比的结果相近。测试结果表明,所制备的Cr/C多层膜样品结构良好,在指定工作波长处有较高的反射峰,达到了设计要求。     

磁控溅射法制备极紫外6.8～11.0nm波段Mo/B_4C横向梯度多层膜（英文）

用直流磁控溅射法结合掩模板控制膜厚的方法在Si衬底上制备了工作于6.8～11.0nm波段的[Mo/B_4C]60横向梯度多层膜。利用X射线掠入射反射测试以及同步辐射反射率测试对梯度多层膜的结构及性能进行了测试。X射线掠入射反射测试结果表明,多层膜周期厚度沿着长轴方向从4.39nm逐渐增加到7.82nm,周期厚度平均梯度为0.054nm/mm。对横向梯度多层膜沿长轴方向每隔5mm进行了一次同步辐射反射率测试,结果显示,横向梯度多层膜在45°入射角下的反射率约为10%,反射峰的半高全宽介于0.13nm到0.31nm之间。     

磁控溅射法制备极紫外6.8~11.0 nm波段Mo/B4C横向梯度多层膜

用直流磁控溅射法结合掩模板控制膜厚的方法在Si衬底上制备了工作于6.8~11.0 nm波段的[Mo/B₄C]₆₀横向梯度多层膜。利用X射线掠入射反射测试以及同步辐射反射率测试对梯度多层膜的结构及性能进行了测试。X射线掠入射反射测试结果表明,多层膜周期厚度沿着长轴方向从4.39 nm逐渐增加到7.82 nm,周期厚度平均梯度为0.054 nm/mm。对横向梯度多层膜沿长轴方向每隔5 mm进行了一次同步辐射反射率测试,结果显示,横向梯度多层膜在45°入射角下的反射率约为10%,反射峰的半高全宽介于0.13 nm到0.31 nm之间。     

50～11O nm波段高反射率多层膜的设计与制备

阐述了50～110 nm强吸收波段亚四分之一波长多层膜的设计方法.这种膜系是由强吸收材料叠加而成,每层膜光学厚度小于四分之一个波长.与常规周期多层膜相比,这种膜系更适用于提高强吸收波段的反射率.利用该方法设计了50 nm处高反射多层膜,并以此为初始条件通过Levenberg-Marquart优化方法完成了50～110 nm强吸收波段宽带高反射率Si/W/Co多层膜的设计,其平均反射率达到45%.采用直流磁控溅射方法制备了Si/W/Co多层膜,用X射线衍射仪(XRD)对膜层结构进行了测试,测试结果表明制作出的多层膜结构与设计结构基本相符.     

50~110 nm波段高反射率多层膜的设计与制备

阐述了50~110 nm强吸收波段亚四分之一波长多层膜的设计方法.这种膜系是由强吸收材料叠加而成，每层膜光学厚度小于四分之一个波长.与常规周期多层膜相比，这种膜系更适用于提高强吸收波段的反射率.利用该方法设计了50 nm处高反射多层膜，并以此为初始条件通过Levenberg-Marquart优化方法完成了50~110 nm强吸收波段宽带高反射率Si/W/Co多层膜的设计，其平均反射率达到45%.采用直流磁控溅射方法制备了Si/W/Co多层膜,用X射线衍射仪(XRD)对膜层结构进行了测试，测试结果表明制作出的多层膜结构与设计结构基本相符.     

Infrared antireflective filtering for extreme ultraviolet multilayer Bragg reflectors

An extreme ultraviolet multilayer mirror with an integrated spectral filter for the IR range is presented and experimentally evaluated. The system consists of an IR-transparent B4C/Si multilayer stack which is used both as EUV-reflective coating and as a phase shift layer of the resonant IR antireflective (AR) coating. The AR coating is optimized in our particular case to suppress CO2 laser radiation at a wavelength of 10.6 μm, and a suppression of more than two orders of magnitude is demonstrated. The method allows high suppression over a large angular acceptance range, relevant for application in lithography systems.     

Large second-harmonic generation at 1.55 μmin oxidized AlGaAs waveguides

We report on CW second-harmonic generation in selectively oxidized AlGaAs multilayer waveguides. Frequency doubling of a 1.55 μm pump is observed with 2.8% W(-1) conversion efficiency and a maximum second-harmonic power around 0.3 mW. This is the strongest second-harmonic generation ever reported in semiconductor waveguides and an encouraging result toward integrated spontaneous parametric downconversion in the telecom range.     

Uniform light emission from electrically driven plasmonic grating using multilayer tunneling barriers

Light emission by inelastic tunneling(LEIT)from a metal-insulator-metal tunnel junction is an ultrafast emission process.It is a promising platform for ultrafast transduction from electrical signal to optical signal on integrated circuits.However,existing procedures of fabricating LEIT devices usually involve both top-down and bottom-up techniques,which reduces its compatibility with the modern microfabrication streamline and limits its potential applications in industrial scale-up.Here in this work,we lift these restrictions by using a multilayer insulator grown by atomic layer deposition as the tunnel barrier.For the first time,we fabricate an LEIT device fully by microfabrication techniques and show a stable performance under ambient conditions.Uniform electroluminescence is observed over the entire active region,with the emission spectrum shaped by metallic grating plasmons.The introduction of a multilayer insulator into the LEIT can provide an additional degree of freedom for engineering the energy band landscape of the tunnel barrier.The presented scheme of preparing a stable ultrathin tunnel barrier may also find some applications in a wide range of integrated optoelectronic devices.     

Improving attosecond pulse reflection by large angle incidence for periodic multilayer mirror in the extreme ultraviolet region

The improvement of attosecond pulse reflection by large angle incidence for periodic multilayer mirror in the extreme ultraviolet region has been discussed. Numerical simulations of both spectral and temporal reflection characteristics of periodic multilayer mirrors under various incident angles have been analyzed and compared. It was found that the periodic multilayer mirror under larger incidence angle can provide not only higher integrated reflectivity but also broader reflection band with negligible dispersion, making it possible to obtain better reflected pulse that owns higher pulse reflection efficiency and shorter pulse duration for attosecond pulse reflection. In addition, with increasing of incident angle, the promoting of attosecond pulse reflection capability has been proven for periodic multilayer mirrors with arbitrary layers.     

Improving attosecond pulse reflection by large angle incidence for a periodic multilayer mirror in the extreme ultraviolet region

The improvement of attosecond pulse reflection by large angle incidence for a periodic multilayer mirror in the extreme ultraviolet region has been discussed. Numerical simulations of both spectral and temporal reflection characteristics of periodic multilayer mirrors under various incident angles have been analyzed and compared. It was found that the periodic multilayer mirror under a larger incidence angle can provide not only higher integrated reflectivity but also a broader reflection band with negligible dispersion, making it possible to obtain better a reflected pulse that has a higher pulse reflection efficiency and shorter pulse duration for attosecond pulse reflection. In addition, by increasing the incident angle, the promotion of attosecond pulse reflection capability has been proven for periodic multilayer mirrors with arbitrary layers.     

Integrated optical polarizer

Theoretical and experimental investigations of an integrated optical polarize are reported. The principle of the polarizer resides in transforming a waveguide into a leaky waveguide by depositing a dielectric multilayer superstrate comprising materials with higher refractive indices. The dielectric multilayer is so designed that TM modes are transmitted as the result of Brewster's law and interference effects, whereas TE modes are reflected back into the waveguide.     

Structure of modes of smoothly irregular three-dimensional integrated optical four-layer waveguide

An asymptotic method is used for researching an integrated optical multilayer waveguide satisfying the condition of the smooth modification of the shape of the studied three-dimensional structure. Three-dimensional fields of smoothly deforming modes of the integrated optical waveguide are described analytically. An evident dependence of the contributions that the first order of smallness makes to the amplitudes of the electrical and magnetic fields of the quasi-waveguide modes is obtained. The canonical type of equations describing the propagation of quasi-TE and quasi-TM modes in the smoothly irregular part of a four-layer integrated optical waveguide is represented for an asymptotic method. With the help of the method of coupled waves and the perturbation theory method, the shifts of complex propagation constants for quasi-TE and quasi-TM modes are obtained in an explicit form. The elaborated theory is applicable for an analysis of similar structures of dielectric materials, magnetic materials, and metamaterials over a wide enough range of electromagnetic wavelengths.     

Integrated microwave (centimeter-range) modulator on polycrystalline diamond layers

Measuring data for the parameters of a microstrip switching superhigh-frequency integrated circuit on a 100-μm-thick polycrystalline diamond film are reported. Measurements are taken in the frequency range 3–7 GHz. It is shown that the decay in developmental modulators is no greater than 1.5 dB in the on state and no less than 29 dB in the off state. Physicochemical analysis of the multilayer contact metallization technology as applied to synthetic diamond and a silicon p-i-n diode is carried out. The metallization is shown to be stable up to 400°C.     

Basic Parameters of Asymmetrical Coplanar Striplines with Multilayer Substrates and Overlays

In this paper, asymmetrical coplanar striplines (ACPS) with multilayer substrates and overlays are analyzed using conformal mapping method. Analytic closed-form expressions for the basic parameters are obtained. The analyses are useful for monolithic microwave integrated circuits and integrated optical application.