Double phase transitions in K2Pb2Sm2W2Ti4Nb4O30 ferroelectrics

This paper reports about the double phase transition (at 315 and 366 °C) in the polycrystalline sample of K₂Pb₂Sm₂W₂Ti₄Nb₄O₃₀ prepared by a high-temperature solid-state reaction technique. The calcination temperature was decided based on thermogravimetry analysis. Room temperature X-ray structural analysis confirms the formation of a single phase compound. The surface morphology recorded by scanning electron microscope exhibits a uniform grain distribution with high density. Detailed studies on the nature of variation (1) of dielectric parameters with temperature, and (2) polarization with temperature confirmed the existence of ferroelectricity in the material at room temperature. The temperature dependence of dc conductivity shows a typical Arrhenius behavior. The frequency dependence of ac conductivity suggests that the material obeys Jonscher’s universal power law. The variation of current with temperature shows that the material has high pyroelectric co-efficient and figure of merit, thus making it useful for pyroelectric sensors.     

Structural, dielectric and electrical properties of Li2Pb2La2W2Ti4Nb4O30 ceramic

Li₂Pb₂La₂W₂Ti₄Nb₄O₃₀ complex ferroelectric oxide was prepared by using a high-temperature solid-state reaction method (calcination temperature, ~1100 °C and sintering temperature, ~1150 °C). Room temperature preliminary structural analysis shows formation of a single-phase compound. The nature of microstructure (i.e. grain distribution, presence of voids, grain size, etc) recorded using scanning electron microscope (SEM) clearly suggests the formation of high quality and density of pellet samples. Studies of temperature dependence of dielectric constant, tangent loss and polarization show the existence of ferroelectric phase transition in the material at high temperature (307 °C). Detailed studies of temperature dependence of electrical parameters (i.e. impedance (400?475 °C), modulus, conductivity, etc) of the material clearly suggest a strong correlation between its microstructure (i.e. bulk, grain boundary, etc) and electrical properties. The nature of temperature variation of d.c. conductivity showed an Arrhenius behaviour of the material. A signature of ionic conductivity in the material was observed in its a.c. conductivity spectrum. The nature of frequency dependence of a.c. conductivity of the material can be explained by Jonscher’s universal power law. Electrical transport properties of the material show existence of non-exponential type of conductivity relaxation.     

Modification of Ba4Sm2Ti4Ta6O30 dielectric ceramics

Modification of promising tungsten bronze-type dielectric ceramic Ba₄Sm₂Ti₄Ta₆O₃₀ has been investigated by adjusting the composition in Ba_4-3xSm_2+2xTi₄Ta₆O₃₀. The temperature coefficient of dielectric constant has been significantly improved by such modification together with the suppressed dielectric loss, but the dielectric constant decreased significantly. © 2000 Kluwer Academic Publishers     

Synthesis,structure and characterization of ceramic Ca4Bi2Ti4Nb6O30

The polycrystalline samples of Ca₄Bi₂Ti₄Nb₆O₃₀ (herein designated CBTN) were synthesized by the conventional ceramic method. Preliminary X-ray structural study of the compound showed the formation of a single phase solid solution having orthorhombic structure in the paraelectric phase. Measurements of the dielectric constant (ε) and dielectric loss (tan δ) as a function of temperature (−180–200°C) at 1 kHz and 10 kHz and also as a function of frequency (10² Hz to 10⁴ Hz) at five different temperatures [−180°C, −40°C, − 10°C 26°C (room temperature) and 75°C] have shown a dielectric anomaly and a phase transition at − 13 ±1°C in CBTN.     

Impedance analysis in Li2Pb2R2W2Ti4Nb4O30 (R = Y, Eu) ceramics

The polycrystalline materials [Li₂Pb₂R₂W₂Ti₄Nb₄O₃₀ (R = Y, Eu)] of tungsten bronze structural family have been synthesized using a high-temperature solid-state reaction (mixed-oxide) technique. Study of electrical properties (impedance, modulus, conductivity, etc.,) of the materials exhibits a strong correlation between their bulk, grain boundary and electrical parameters. The value and nature of temperature dependence of ac conductivity clearly exhibits that the materials have thermally activated transport properties of Arrhenius-type.     

Ba4Nd2Ti4Ta6O30 dielectric ceramics modified by Bi substitution for Nd

Modification of dielectric properties for Ba₄Nd₂Ti₄Ta₆O₃₀ ceramic was investigated through Bi partial substitution for Nd. The dielectric constant increased and the dielectric loss decreased with increasing concentration of Bi, and the dielectric constant reached 142, combined with a low dielectric loss of 10^–4 (at 1 MHz) for the composition Ba₄(Nd_0.975Bi_0.025)₂Ti₄Ta₆O₃₀. The temperature coefficient () can be slightly improved.     

Ti6Al4V钛合金表面Ta2O5/Ta2O5-Ti/Ti多涂层的制备与性能研究

采用磁控溅射技术在Ti6Al4V钛合金表面制备了Ta_2O_5/Ta_2O_5-Ti/Ti多层涂层;利用扫描电子显微镜(SEM)、X射线衍射仪(XRD)和X射线光电子能谱仪 (XPS),分析了涂层的微观结构、物性组成和化学价态;通过划痕仪、纳米压痕仪、摩擦磨损试验机和电化学工作站,检测了涂层的结合强度、力学性能、摩擦系数和耐腐蚀性。研究结果表明,Ta_2O_5/Ta_2O_5-Ti/Ti多层涂层表面由峰型颗粒组成,粒径大小均匀,涂层结构致密。与Ti6Al4V相比,Ta_2O_5/Ta_2O_5-Ti/Ti多层涂层试样具有较小的摩擦系数,较高的腐蚀电位和较小的腐蚀电流密度,表现出良好的耐磨和耐腐蚀性能,能对Ti6Al4V合金植入材料起到较好的保护作用。     

Characterization and dielectric properties of Sr4La2Ti4M6O30 (M=Nb, Ta) ceramics

Sr₄La₂Ti₄M₆O₃₀ (M=Nb or Ta) compounds were synthesized by the conventional powder compaction and high temperature solid state reaction technique. The dielectric properties of the sintered samples were measured and they were further characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM) methods. Sr₄La₂Ti₄M₆O₃₀ compounds are paraelectric phases adopting filled tetragonal tungsten–bronze (TB) structure at room temperature. Sr₄La₂Ti₄Nb₆O₃₀ and Sr₄La₂Ti₄Ta₆O₃₀ show high dielectric constants of 387 and 166 together with low dielectric loss of 0.0084 and 0.0042 at 1 MHz, respectively.     

Synthesis and structural characterization of Na2MnP2O7 crystal

Na₂MnP₂O₇ crystals were synthesized by hydrothermal technique. Crystals obtained are in the form of single crystals of rhombohedral morphology with lattice parameters as follows: triclinic, P 1, π = 0-71069 Å, a = 6.657(3) Å, b = 6.714(6) Å, c = 6.518(4) Å, α = 112.31(6)°, β = 92.14(4)°, γ = 83.89(5)°, V = 268.0(3) ų, Z = 2, ρ_cal = 2, 3.121 g/cm³, μ = 3.121 mm^-1, F₀₀₀ = 244, goodness-of-fit on F = 1.348, final R indices with [I > 3σ(I)]R = 0051 and ωR = 0.065.     

Synthesis and Sintering of Bi2Ti4O11

The conditions of Bi₂Ti₄O₁₁ formation are studied. It is shown that the process is diffusion-controlled and depends significantly on the heating rate. The optimal conditions for producing Bi₂Ti₄O₁₁ ceramics are determined. Cold pressing of Bi₂Ti₄O₁₁ ceramic powder at high pressures is shown to influence the unit-cell parameters and volume, positional parameters of Bi and Ti, and bond distances in the ferroelectric ceramics produced by subsequent sintering. The ferroelectric transition temperature decreases steadily with increasing densification pressure.     

Synthesis of K2Ti4O9 whiskers

Potassium tetratitanate (K₂Ti₄O₉) whiskers were synthesized by the calcination and slow-cooling method. Powder X-ray diffraction (XRD) analysis and differential thermal analysis (DTA) were used to study the formation of K₂Ti₄O₉. In the slow-cooling calcination process, the control of cooling rate was crucial to growth of K₂Ti₄O₉ whiskers. The characterization of the whiskers was carried out by means of scanning electron microscope (SEM).     

Synthesis and ferroelectric properties of SrBi2Ta2O9/Bi4Ti3O12/p-Si multilayer thin films by Sol-Gel

SrBi₂Ta₂O₉(SBT)/Bi₄Ti₃O₁₂(BIT) multilayer thin films were prepared on p-Si substrates by Sol-Gel method, the effect of thickness of SBT and annealing temperature on structure, morphology, ferroelectric and fatigue properties of SBT/BIT ferroelectric films were investigated. The SBT/BIT multilayer films annealed at above 600 ^∘C were uniform and crack free as well as exhibited no pyrochlore phase. The remanent polarization and the coercive field of SBT/BIT multilayer films both increases with the increase of annealing temperature due to better crystallization and larger grain size. The SBT/BIT multilayer thin films consisting of 1 layer of SBT and 3 layers of BIT annealed above 650 ^∘C obtained its best ferroelectric properties with a P_r of 8.1 μC/cm² and a E_c of 130 kV/cm which is comparable to that of pure BIT films and had a fatigue-free property up to 10¹¹ switching cycles, but P_nv appeared under the cycle field of 175 kV/cm and increased with the decrease of cycle field.     

Growth of NiWO4 crystals from a Na2W2O7 flux

Well-formed rod crystals of NiWO₄ were grown from a Na₂W₂O₇ flux by a slow cooling method. The solubility of NiWO₄ in Na₂W₂O₇ increased with increasing temperature. At 1100 °C, NiWO₄ was dissolved in Na₂W₂O₇ at a concentration of about 45 mol %. The eutectic temperature was 615± 5 °C. Flux growth was conducted by heating mixtures at 1100 °C for 10 h, followed by cooling to 500 °C at a rate of 5 °C h^–1. The brownish and transparent crystals up to 15 mm in length were grown from the mixtures of about 40 g. The most suitable solute content was 30 mol %. The grown crystals were bounded by the {100}, {010}, {110}, {102}, and {111} faces. In certain instances, the {111} faces disappeared. The EPMA data showed that sodium from the flux used was not contained within the grown crystals. The crystals of NiWO₄ had a d.c. electrical resistivity of about 1 × 10¹¹ cm.