外场作用下铁电/铁磁双层膜的极化磁化性质

建立了铁电/铁磁双层膜模型,铁电层的电矩用连续标量描述,而铁磁层的自旋应用经典矢量描述.利用蒙特卡罗方法模拟了体系的热力学性质和极化、磁化行为.给出了零场下体系的内能、比热、极化和磁化随温度变化的关系,并分别研究了体系在外磁场和外电场下的极化和磁化行为.模拟结果表明,双层膜体系的内能、比热、极化和磁化性质因层间耦合系数的不同而明显不同,当界面耦合较弱时,双层膜表现出各自的热力学性质,当层间耦合增强到一定程度时,双层膜耦合为一个整体,表现出统一的热力学性质.该双层膜在外场中形成电滞回线和磁滞回线,并表现出偏置特性,界面耦合强度和温度影响滞后回线和偏置现象.     

蛋白质跨膜传输的飞秒和频振动光谱快速实时监测（英文）

精确表征界面蛋白质结构与动力学行为是理解生物大分子功能及其与界面相互作用机制的核心.而其关键在于发展同时具有足够结构与时间分辨度的技术来捕捉界面蛋白质的动态结构变化.本文利用本小组最近发展的飞秒和频振动光谱系统来实时研究蛋白质跨膜传输过程.该系统实现目前文献报导中最快的和频光谱采谱速度.通过实时监控WALP23与DMPG双层膜作用过程中酰胺I和酰胺A的和频信号,发现WALP23最初以无规则卷曲结构吸附在凝胶相的DPMG双层膜表面.DMPG膜表面上WALP23的吸附,会导致膜表面电荷发生反转,从而改变膜界面水分子的取向.通过加热使DMPG由凝胶相转变为流动相后,WALP23以N端插入的方式实现跨膜过程.在跨膜过程中,WALP23结构由无规则卷曲转变为α-螺旋/回环混合结构,最后形成纯α-螺旋结构,同时引起DMPG膜的去水合作用.此系统可直接应用到其他界面快过程的表征工作,将有助于深入理解各种界面现象的本质.     

铁磁/反铁磁双层膜系统中的磁畴动力学行为

比较了铁磁单层膜与铁磁/反铁磁双层膜结构中的磁畴演化行为, 发现由于反铁磁层膜对铁磁层膜的耦合作用使得系统的磁畴壁厚度、 磁畴壁等效质量、磁畴壁移动速度等发生了改变, 系统的矫顽场增强, 并出现了交换偏置场. 文章具体研究了反铁磁层耦合作用下其磁畴壁厚度、 等效质量以及磁畴壁移动速度等与反铁磁层的净磁化、 磁各向异性、界面耦合强度以及温度等的关系; 并研究了其对铁磁/反铁磁双层膜中的交换偏置场、矫顽场的影响. 进而 从磁畴结构的形成及其演化上揭示了铁磁/反铁磁双 层膜中出现交换偏置以及矫顽场增加的物理机制.     

多铁性BiFeO_3异质结构在多场作用下物理性质研究

多铁材料BiFeO3不但具有优越的铁电特性,同时由于电、磁、光之间的耦合作用,可以实现电场控制磁化,光照控制电学性质,是研究新型多参量耦合器件的首选材料。文章介绍了作者实验室对铁电材料BiFeO3异质结构的可反转二极管效应和电致电阻效应的研究。在理论研究方面,作者考虑了金属电极的不完全屏蔽效应,提出了极化控制界面肖特基势垒高度模型,解释了金属/铁电结构/金属的可反转二极管效应。在BiFeO3/La0.7Sr0.3MnO3铁电/铁磁异质结构实验研究方面,作者研究了BiFeO3薄膜厚度对体系电学和磁学性质的影响,实现了在光、电双场调控下研究Au/BiFeO3/La0.7Sr0.3MnO3/SrTiO3体系的光、电性质,可为以后研究多参量对器件性能的影响提供参考。     

GdFeCo磁光薄膜中RE-TM反铁磁耦合与激光感应超快磁化翻转动力学研究

使用飞秒时间分辨抽运-探测磁光克尔光谱技术,研究了激光加热GdFeCo磁光薄膜跨越铁磁补偿温度时稀土-过渡金属(RE-TM)反铁磁交换耦合行为和超快磁化翻转动力学. 实验观察到由于跨越铁磁补偿温度、净磁矩携带者交换而引起的磁化翻转反常克尔磁滞回线以及在同向外磁场下,反常回线上大于和小于矫顽力部分的饱和磁化强度不同,显示出GdFeCo中RE与TM之间的非完全刚性反铁磁耦合. 在含有Al导热底层的GdFeCo薄膜上观测到饱和磁场下激光感应磁化态翻转及再恢复的完整超快动力学过程. 与剩磁态的激光感应超快退磁化过 关键词： 补偿温度 磁化翻转 反铁磁耦合 GdFeCo     

界面原子扩散对SmCo/Fe交换弹簧双层膜磁性能影响的微磁学研究

本文通过三维微磁学数值模拟,研究了界面处原子扩散形成的界面层对易轴平行和垂直膜面取向SmCo/Fe双层膜磁性能的影响.当易轴取向平行膜面时,体系成核在第二象限.随着界面层厚度的增加,尽管剩磁逐渐减小,而成核场和钉扎场逐渐增加,以致最大磁能积先增加后减小,直至体系由交换弹簧磁体过渡到刚性磁体.当易轴取向垂直膜面时,随着界面层厚度的增加,体系成核由第一象限逐渐过渡到第二象限,虽然钉扎场从减小、不变到略有增加,但成核场和剩磁逐渐增加,导致最大磁能积逐渐增加.在退磁过程中,膜面内自旋偏转:易轴平行膜面取向系统显示了 flower态和C态的产生与消失的过程;而易轴垂直膜面取向系统显示了vortex态的产生与消失的过程.随着易轴平行膜面SmCo/Fe双层膜界面层中SmCo原子扩散比例的增加,成核场和钉扎场增加但剩磁减小,最大磁能积先增加后降低.当易轴两种取向时,对任一界面层厚度,成核场随界面交换耦合常数的增大而增大,这表明界面层的存在增强了硬磁/软磁层之间的交换耦合作用.本文建立的模型很好地模拟了相关的实验结果[2007 Appl. Phys. Lett. 91 072509].     

铁磁材料界面磁耦合表面格林函数方法

基于表面格林函数理论,考虑二维平移对称,通过紧束缚线性糕模轨道(TB-LMTO)表面格林函数方法和完全避开一般的块格林函数方法(GF)方法,研究了铁磁材料界面磁耦合,以Co/Cu/Co的3层膜为例,对铁磁体之间的层间交换耦合作用进行了讨论.研究表明:磁性多层结构交换耦合振荡依赖于夹层厚度,当磁性层厚度改变,单独RKKY势的贡献显著的依赖于界面耦合.这结论与一种从头计算方法,在磁性多层膜中评价交换振荡耦合的结果相一致.     

铁电极化子动力学理论

在铁电屏蔽理论的基础上发展铁电极化子动力学理论,用来解释铁电体的极化反转现象.理论结果与TGS单晶的实验结果符合得很好.由该理论还可进一步用来研究铁电发射的基本物理过程 关键词： 铁电极化子 极化反转 慢极化效应     

外应力场下铁磁/反铁磁双层膜系统中的自旋波

采用自由能极小的方法研究了铁磁/反铁磁双层膜系统在外应力场下的一致进动自旋波性质，即铁磁共振现象. 本模型中铁磁层很薄可看成单畴结构，但具有单轴磁晶各向异性和立方磁晶各向异性；而反铁磁层仅具有单轴磁晶各向异性，但其厚度趋于半无穷. 推导出了该系统的铁磁共振频率和频谱宽度的解析式. 结果表明，外应力场和界面交换耦合或反铁磁磁强度仅在弱磁场下对系统的铁磁共振有影响，且系统的铁磁共振行为按磁场强度可分为两支，其区分弱磁场和强磁场的临界场依赖于外应力场的方向. 另一方面，应力场方向的改变可借助于反铁磁层磁畴变化对铁磁层磁晶各向异性轴有影响. 关键词： 铁磁/反铁磁双层膜 界面耦合强度 铁磁共振 应力场     

依赖于时间和强度耦合Jaynes-Cummings模型中原子的量子特性

本文研究了依赖于时间和强度耦合Jaynes-Cummings模型中原子的动力学行为.详细讨论了脉冲宽度和腔场强度对原子能级布居数反转的影响.     

Combined effect of the transition layer and interfacial coupling on the properties of ferroelectric bilayer film

Within the framework of modified Ginzburg--Landau--Devonshire phenomenological theory, a ferroelectric bilayer film with a transition layer within each constituent film and an interfacial coupling between two materials has been studied. Properties including the Curie temperature and the spontaneous polarization of a bilayer film composed of two equally thick ferroelectric constituent films are discussed. The results show that the combined effect of the transition layer and the interfacial coupling plays an important role in explaining the interesting behaviour of ferroelectric multilayer structures consisting of two ferroelectric materials.     

Polarization reversal behavior of an asymmetric ferroelectric thin film

Using the Landau–Khalatnikov equation of motion, the polarization reversal behavior in an asymmetric ferroelectric thin film has been studied. Our model first introduces a third power of polarization to describe the asymmetry of a ferroelectric thin film with surface transition layer, which originates from the difference between the surfaces. Interestingly, vertical drift of polarization switching behaviors was found in this system. The properties consisting of hysteresis loop, spontaneous polarization, switching current of an asymmetric ferroelectric thin film with surface transition layer are discussed.     

Dielectric susceptibility of a ferroelectric bilayer film with surface transition layers

Using the transverse Ising model within the framework of the mean-field theory, we investigate a ferroelectric bilayer film with the surface transition layer within each constituent slab and an antiferroelectric interfacial coupling between two slabs. The combined influence of the surface transition layer and antiferroelectric interfacial coupling on the dielectric susceptibility of a bilayer film is discussed in detail. The results show that the surface transition layer plays a crucial role in dielectric susceptibility of a bilayer film.     

The hysteresis loops of a ferroelectric bilayer film with surface transition layers

Based on the transverse Ising model in the framework of the mean field approximation,this paper discusses a ferroelectric bilayer film with the surface transition layers within each constituent slab and an antiferroelectric interfacial coupling between two slabs.The hysteresis loop of a bilayer film is investigated.The results show that the surface transition layer in a ferroelectric bilayer film plays a significant role in realizing the multiple-state memory.     

The polarization and dielectric susceptibility of a ferroelectric bilayer film

A ferroelectric bilayer film consisting of two different ferroelectric constituent films with a transition layer within each constituent film and interfacial coupling between two materials is investigated based on the Ginzburg-Landau-Devonshire phenomenological theory. A parameter α, which describing the differences between physical properties of two constituent films is first introduced in our paper, and reflects a more realistic situation compared to the previous treatments assuming the same two constituent films. We study the polarization and dielectric susceptibility properties of the ferroelectric bilayer film with two different constituent films. The results present some interesting phenomena due to the introduction of parameter α.     

Study on the dynamic critical behavior of a ferroelectric heterostructure

A Landau–Devonshire theory added in Landau–Khalatnikov dynamic equation has been used firstly to explore the dynamic critical behavior of a ferroelectric heterostructure composed of two different ferroelectric films. Two identical surface transition layers within each film are assumed, and an antiferroelectric interfacial coupling between two materials is considered. One interfacial parameter β is introduced to describe the differences of physical characteristics between two constituent films, which can reflect more realistic dynamic mechanism. It is found that the ferroelectric heterostructure may exhibit multi-loop hysteresis loop and four peaks of dielectric susceptibility if the appropriate values of parameter β, antiferroelectric interfacial coupling and size of the system are selected. We obtain the critical behavior of the appearance in multi-loop hysteresis loops and four peaks of dielectric susceptibility by equilibrium action of parameter β and antiferroelectric interfacial coupling, which will provide theoretical guiding for designing the multi-state memory and miniaturized device in future.     

Ferroelectric polarization reversal tuned by magnetic field in a ferroelectric BiFeO3/Nb-doped SrTiO3 heterojunction

Interfacial resistive switching of a ferroelectric semiconductor heterojunction is highly advantageous for the newly developed ferroelectric memristors. Moreover, the interfacial state in the ferroelectric semiconductor heterojunction can be gradually modified by polarization reversal, which may give rise to continuously tunable resistive switching behavior. In this work, the interfacial state of a ferroelectric BiFeO₃/Nb-doped SrTiO₃ junction was modulated by ferroelectric polarization reversal. The dynamics of surface screening charges on the BiFeO₃ layer was also investigated by surface potential measurements, and the decay of the surface potential could be speeded up by the magnetic field. Moreover, ferroelectric polarization reversal of the BiFeO₃ layer was tuned by the magnetic field. This finding could provide a method to enhance the ferroelectric and electrical properties of ferroelectric BiFeO₃ films by tuning the magnetic field.     

Investigation of the seeding-layer effect for a ferroelectric thin film with the transverse Ising model

The transition feature of a ferroelectric thin film with a seeding layer is studied based on the transverse Ising model. The influence of the seeding layer on the transition behavior of a ferroelectric thin film is investigated systemically, and the effect of the interaction parameters for the seeding layer on the phase diagram is also obtained. Meanwhile, the polarization and Curie temperature of the ferroelectric thin film are calculated for different seeding-layer structures. The results show that the polarization and Curie temperature of the film will be obviously modified on adding a seeding layer.     

Au/PZT/BIT/p-Si异质结的制备与性能研究

采用脉冲激光沉积(PLD)工艺,制备了以Bi₄Ti₃O₁₂(BIT)为过渡阻挡层的Au/PZT/BIT/p-Si异质结.研究了BIT铁电层对Pb(Zr_0.52Ti_0.48)O₃(PZT)薄膜晶相结构、铁电及介电性能的影响,对Au/PZT/BIT/p-Si异质结的导电机制进行了讨论.氧气氛530℃淀积的PZT为多晶铁电薄膜,与直接淀积在Si基片上相比,加入BIT铁电层后PZT铁 关键词： 铁电薄膜 异质结构 脉冲激光沉积(PLD)