n‐Type Organic Semiconductors in Organic Electronics

Organic semiconductors have been the subject of intensive academic and commercial interest over the past two decades, and successful commercial devices incorporating them are slowly beginning to enter the market. Much of the focus has been on the development of hole transporting, or p‐type, semiconductors that have seen a dramatic rise in performance over the last decade. Much less attention has been devoted to electron transporting, or so called n‐type, materials, and in this paper we focus upon recent developments in several classes of n‐type materials and the design guidelines used to develop them.     

Intramolecular Locked Dithioalkylbithiophene‐Based Semiconductors for High‐Performance Organic Field‐Effect Transistors

New 3,3′‐dithioalkyl‐2,2′‐bithiophene ( SBT )‐based small molecular and polymeric semiconductors are synthesized by end‐capping or copolymerization with dithienothiophen‐2‐yl units. Single‐crystal, molecular orbital computations, and optical/electrochemical data indicate that the SBT core is completely planar, likely via S(alkyl)?S(thiophene) intramolecular locks. Therefore, compared to semiconductors based on the conventional 3,3′‐dialkyl‐2,2′‐bithiophene, the resulting SBT systems are planar (torsional angle <1°) and highly π‐conjugated. Charge transport is investigated for solution‐sheared films in field‐effect transistors demonstrating that SBT can enable good semiconducting materials with hole mobilities ranging from ≈0.03 to 1.7 cm² V^?1 s^?1. Transport difference within this family is rationalized by film morphology, as accessed by grazing incidence X‐ray diffraction experiments.     

High‐Throughput Near‐Field Optical Nanoprocessing of Solution‐Deposited Nanoparticles

The application of nanoscale electrical and biological devices will benefit from the development of nanomanufacturing technologies that are high‐throughput, low‐cost, and flexible. Utilizing nanomaterials as building blocks and organizing them in a rational way constitutes an attractive approach towards this goal and has been pursued for the past few years. The optical near‐field nanoprocessing of nanoparticles for high‐throughput nanomanufacturing is reported. The method utilizes fluidically assembled microspheres as a near‐field optical confinement structure array for laser‐assisted nanosintering and nanoablation of nanoparticles. By taking advantage of the low processing temperature and reduced thermal diffusion in the nanoparticle film, a minimum feature size down to ≈100 nm is realized. In addition, smaller features (50 nm) are obtained by furnace annealing of laser‐sintered nanodots at 400 °C. The electrical conductivity of sintered nanolines is also studied. Using nanoline electrodes separated by a submicrometer gap, organic field‐effect transistors are subsequently fabricated with oxygen‐stable semiconducting polymer.