Low thermal drift in highly sensitive doped channel Al0.3Ga0.7As/GaAs/In0.2Ga0.8As micro-Hall element

Micro-Hall sensors with high sensitivity, low noise, and high thermal stability, 5 μm square, are fabricated using pseudomorphic Al_0.3Ga_0.7As/GaAs/In _y Ga_1-y As (0.2 ≤ y ≤ 0.3) heterostructures with Si-doped channels. The structures were optimized for thermal stability using a calculation of the self-consistent solution of Schrödinger-Poisson equations and Fermi-Dirac statistics in Hartree approximation. The optimized structure based on a Si-δ-doped 144 Å In_0.2Ga_0.8As quantum well embedded into uniformly doped GaAs channel showed thermal drifts of only 90 ppm·K^?1 in current drive mode and 192 ppm K^?1 in voltage drive mode. The measurements of the absolute magnetic sensitivity and the low frequency noise were done. The micro-Hall sensor, optimized for thermal drift, is able to resolve the magnetic field of 438 nT.     

Application of selective implantation in Al0.5Ga0.5As/In0.25Ga0.75As/GaAs pseudomorphic single quantum wire structures

A pseudomorphic Al0.5Ga0.5As/In0.25Ga0.75As/GaAs asymmetric quantum wire (QWR) structure was grown on GaAs V-grooved substrate by low pressure metal organic vapor phase epitaxy. The formation of crescent shaped QWRs at the bottom of the V-grooves was confirmed by both transmission electron microscopy and photoluminescence (PL) spectra. The temperature dependence of PL spectra demonstrated a fast decrease of the sidewall quantum well PL intensity with increasing temperature, which originates from relaxation of carriers from well to wire region. The self-aligned dual implantation technique was successfully used to selectively disable the adjacent quantum structures. Decrease of the PL intensity of QWR at 8 K was observed after selective implantation, which resulted from a decreased number of carriers relaxed from adjacent quantum structures.     

InAs quantum dots capped by GaAs,In0.4Ga0.6As dots,and In0.2Ga0.8As well

We have fabricated and characterized three types of InAs quantum dots (QDs) with different InxGa1-xAs capping layers. Post-growth atomic force microscopy measurements show that the In0.2Ga0.8As/InAs structure has a smooth surface (dot-in-well structure), whereas the In0.4Ga0.6As/InAs structure revealed large QDs with a density similar to that underneath InAs QDs on GaAs (dot-in-dot). With increasing In mole fraction of the capping layer and increasing In0.4Ga0.6As thickness, the energy position of the room-temperature photoluminescence (PL) peak is red-shifted. The quantum dot-in-dot structure emits stronger room-temperature PL than does the quantum dot-in-well structure. With a spatially distributed strain in the InAs quantum dot, we have solved the three-dimensional Schr?dinger equation by the Green's function theory for the eigenvalues and eigen wave functions. It is concluded that the ground state increases its wave function penetration into the low-barrier InxGa1-xAs capping layer so that its energy position is red-shifted. The reduced PL peak intensity of the dot-in-well (compared with GaAs covered dots) is due to the reduced overlapping between the ground state and the extended states above the GaAs barrier. The overlapping reduction in the dot-in-dot is over compensated for by the reduced relaxation energy (full width at half-maximum), indicating the importance of the sample quality in determining the PL intensity.     

Al0.15Ga0.85As／GaAs与In0.15Ga0.85As／GaAs甚长波QWIPs响应率的仿真对比

对In0.15Ga0.85As／GaAs和Al0.15Ga0.85As／GaAs两种甚长波段量子阱红外探测器（QwIP）响应率进行计算。采用物理模型与等效电路模型，结合Crosslight和Spice等软件详细表征了这两种QWIPs的吸收系数、暗电流、响应率、量子效率等物理特性。结果表明随外加偏压的升高QWIP的响应率增加，T=40K时，In0.15Ga0.85As／GaAs QwIP的响应率明显比Al0.15Ga0.85As／GaAs QWIP高出2倍以上，通过对量子效率的对比，使仿真结果得到验证。     

溶胶-凝胶法合成La0.9Sr0.1Ga0.8-xAlxMg0.2O3及其性质研究

利用溶胶-凝胶法首次合成了La0.9Sr0.1Ga0.8-xAlxMg0.2O3 (x=0～0.4)系列固体电解质,系统地研究了其晶体结构随Al含量的变化关系.XRD表明1000℃时可形成立方钙钛矿结构,此合成温度明显低于传统固相法所需合成温度(1300～1400℃),且当掺杂量x＞0.1时,即可分辨出杂相.电导率测试表明该体系的电导率与温度的关系是分区间符合Arrhenius定律的,且Al对LSGM中Ga的适量掺杂能有效地促进该体系的离子电导率.     

High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures

The parameters of high-power laser diodes operating at λ=0.94 μm, based on MBE-grown In_0.1Ga_0.9As/AlGaAs/GaAs quantum-dimensional heterostructures, are reported. The laser diodes manufactured using an optimized MBE technology and specially selected dopant profiles are characterized by a lowthreshold current density, a high optical output power, a high differential quantum efficiency, and a long working life (above 10000 h).     

Positive delayed photoconductivity in double heterostructures Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As of the p-type

Positive delayed photoconductivity was observed for the first time in double p-type heterostructures Al_0.5Ga_0.5As/GaAs/Al_0.5Ga_0.5 As upon exposure to the radiation of a red light-emitting diode. In this state, the concentration and mobility of two-dimensional holes are increased 1.5 and 1.7 times, respectively, as compared to the initial dark values. The delayed photoconductivity can be explained by the presence of deep electron traps located above the Fermi level at the inverted heterointerface.     

Lasing characteristics of lasers with a vertical cavity based on In0.2Ga0.8As quantum wells

Semiconductor lasers with a vertical cavity with a high external quantum efficiency and high radiation power have been developed and constructed. Powers up to 10 W at T=300 K and 20 W at T=250 K have been obtained for 500 μm aperture lasers operating in the pulsed regime. Pis’ma Zh. Tekh. Fiz. 25, 40–44 (October 12, 1999)     

Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers

Heterostructures comprising highly strained GaAs quantum wells in Al_0.48In_0.52As and Ga_0.47In_0.53As layers have been grown by the metalorganic chemical vapor deposition method on InP(100) substrates. The photoluminescence spectra of these structures have been studied, and it is established that GaAs quantum wells form type-I heterojunctions with Al_0.48In_0.52As layers and type-II heterojunctions with Ga_0.47In_0.53As layers.     

共压共烧法制备La0.8Sr0.2(Ga0.8Mg0.2)0.1Fe0.9O3-δ致密扩散障碍层极限电流型氧传感器

采用固相合成法制备了La_0.8Sr_0.2(Ga_0.8Mg_0.2)_0.1Fe_0.9O_3-δ(LSGMF)混合导体和La_0.8Sr_0.2Ga_0.8Mg_0.2O_3-δ(LSGM)固体电解质, 利用XRD、TGA、范德堡直流四探针法和热膨胀仪等对试样进行了分析。以LSGMF为致密扩散障碍层, 以LSGM为氧泵层, 采用共压共烧结法制备了极限电流型氧传感器, 利用SEM和EDS对LSGMF/LSGM陶瓷体横截面的微观形貌和成分进行了分析。结果表明: LSGMF具有菱方钙钛矿结构(R-3c空间群), 它在650℃失重速率最快, 其电导率随温度的升高而增大; 300~1000℃范围, LSGM与LSGMF的热膨胀系数分别为12.51×10^-6/℃和12.80×10^-6/℃。650~850℃范围, 氧传感器具有良好的极限电流平台, lgI_L(极限电流I_L)与1000/T呈线性关系, LSGMF中氧离子的扩散激活能为0.4008 eV。800℃、0.3mol%<x(O₂)<21.0mol%时, 极限电流I_L与氧含量x(O₂)间的关系为: I_L(mA)=10.285x(O₂)(mol%), R=0.9982。LSGMF和LSGM结合牢固, 未产生裂纹, EDS分析基本符合各化合物的化学计量比。     

When self-organized In(Ga)As/GaAs quantum dot heterostructures roll up: Emerging devices and applications

Rolled-up GaAs tubular structures, with the incorporation of self-organized In(Ga)As/GaAs quantum dot heterostructures, have emerged as a new class of building blocks for nanophotonics. In this paper we present an overview of the recent developments of In(Ga)As/GaAs quantum dot tube ring resonators and lasers, including their fabrication, characterization, and direct integration with Si waveguides. The perspectives and challenges for using self-organized quantum dot tubes to realize new functionalities in Si-photonics, sensing, and micro/nano-fluidics are also discussed.     

Structural Control of Rashba Spin–Orbit Coupling in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As Quantum Wells

We investigated the correlation between the Rashba spin–orbit coefficient α and potential shape of the quantum wells (QW), where α values are experimentally deduced from the weak antilocalization analysis. We studied the gate I–V properties of the QW samples and have obtained results consistent with the potential shapes predicted for these QWs.     

Catalyst-free synthesis of well-aligned ZnO nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates

Well-aligned ZnO nanowires have been synthesized vertically on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N substrates, using a catalyst-free carbon thermal-reduction vapor phase deposition method for the first time. The as-synthesized nanowires are single crystalline wurtzite structure, and have a growth direction of [0001]. Each nanowire has a smooth surface, and uniform diameter along the growth direction. The average diameter and length of these nanowires are 120-150 nm, and 3-10 )m, respectively. We suggest that the growth mechanism follow a self-catalyzing growth model. Excitonic emission peaked around 385 nm dominates the room-temperature photoluminescence spectra of these nanowires. The room-temperature photoluminescence and Raman scattering spectra show that these nanowires have good optical quality with very less structural defects.     

La0.9Sr0.1Ga0.8Mg0.2O3-α的柠檬酸盐法制备和表征

采用柠檬酸盐法制备了La     

Pd-oxide- Al/sub 0.24/Ga/sub 0.76/As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor

An interesting hydrogen sensor based on an Al/sub 0.24/Ga/sub 0.76/As Schottky barrier high-electron mobility transistor with a catalytic Pd metal/oxide/semiconductor is fabricated and demonstrated. In comparison with traditional Schottky diodes or capacitance-voltage type hydrogen sensors, the studied device exhibits larger current variation, lower hydrogen detection limit, and shorter transient hydrogen response time. Besides, good hydrogen-sensing properties, such as significant drain current change, threshold voltage shift, and transconductance change of transistor behaviors, are obtained. Therefore, the studied device provides the promise for high-performance solid-state hydrogen sensors, optoelectronic integrated circuits, and microelectromechanical system applications.     

Proton conduction in La0.9Sr0.1Ga0.8Mg0.2O3−α ceramic prepared via microemulsion method and its application in ammonia synthesis at atmospheric pressure

The popular electrolyte of La_0.9Sr_0.1Ga_0.8Mg_0.2O_3−α was prepared via microemulsion method by using (NH₄)₂CO₃–NH₄OH as the co-precipitation reagent, followed by calcination and sinteration in air. The sintered ceramic was characterized by scanning electron microscopy (SEM) and powder X-ray diffraction (XRD) methods. The conduction behaviors in La_0.9Sr_0.1Ga_0.8Mg_0.2O_3−α were investigated by using the electrochemical methods including gas concentration cells and electrochemical hydrogen permeation. The results indicate that the charge carriers in La_0.9Sr_0.1Ga_0.8Mg_0.2O_3−α are protons under hydrogen atmosphere. Ammonia was synthesized at atmospheric pressure successfully by using La_0.9Sr_0.1Ga_0.8Mg_0.2O_3−α as solid electrolyte for the first time.