铝诱导非晶硅薄膜快速低温晶化研究

采用金属铝诱导晶化非晶硅薄膜的方法制备多晶硅薄膜。研究了不同的退火温度对a-Si薄膜晶化的影响，采用XRD，Raman，SEM等测试手段分析了实验结果。实验结果发现非晶硅薄膜在400℃下退火20min薄膜仍为非晶结构（a-Si），在450℃下退火20min后非晶硅开始晶化且随着温度的升高，且晶化程度加强。     

低能离子束轰击对非晶Ni-P薄膜组织与性能的影响

用X－射线衍射仪（XRD），俄歇电子能谱分析仪（AES），电子探针（EPMA），差示扫描量热仪（DSC）和超微显微硬度计研究了低能氮离子束对非晶Ni-P合金镀层进行轰击的晶化规律，分析了在低能氮离子束作用下的非晶薄膜的组织结构和显微硬度，结果表明，用能量为3．0－4．0keV，束流为80－200mA的低能氮离子束对非晶Ni-P镀层进行轰击，镀层中可以晶化析出Ni和Ni3P相，并在Ni(111）晶面上出现择优取向。随低能氮离子束的轰击能量和束流的增大，Ni-P非晶镀层中Ni和Ni3P的晶化温度下降，束流对晶化温度的影响比加速电压的影响大。载能粒子对非晶薄膜的作用，产生氮离子注入效应，使表层的含氮量增加。随束流的增加，显微硬度增加减缓，而随氮离子束加速电压增加，显微硬度增加明显，在4000V加速电压的氮离子束轰击下，显微硬度达到HV2131，比一般退火晶化方法所得到的显微硬度显著提高。     

晶化分数对钛基非晶复合材料热塑性成形能力的影响

目的 研究晶化分数对原位晶化钛基非晶复合材料热塑性成形能力的影响,优化Ti基非晶复合材料的制备和设计。方法 首先采用电弧熔炼和铜模铸造制备出成分为Ti45Zr20Be29Fe6和Ti45Zr20Be29Cu6的非晶合金,通过连续加热DSC及等温DSC研究其晶化动力学,然后根据得到的等温晶化规律制备不同晶化体积分数的非晶复合材料,并通过静态热机械分析(TMA)表征其热塑性成形能力。结果 Ti45Zr20Be29Fe6在406 ℃与411 ℃时,等温晶化过程为形核率随时间增大的形核长大过程;Ti45Zr20Be29Cu6在370,375,380,385 ℃时,等温晶化过程为形核率随时间减小的形核长大过程;XRD物相分析表明,等温处理后Ti45Zr20Be29Fe6和Ti45Zr20Be29Cu6的析出相分别为β-Ti和α-Ti2Zr;两种内生复合材料的热塑性成形能力均随晶化相体积分数的增大而降低,且Ti45Zr20Be29Fe6基体复合材料的热塑性成形能力比以Ti45Zr20Be29Cu6为基底的复合材料更好。结论 晶化分数增加会降低钛基非晶复合材料的热塑性成形性能,且其影响程度与复合材料的基体和晶体第二相的特性有关。     

Nd_9Fe_(85.5-x)Co_xB_(5.5)快淬薄带晶化动力学研究

采用真空再充Ar保护的DSC测量了Nd9Fe85.5-x Cox B5.5(x=3%,5%(原子分数))非晶薄带的升温曲线,计算了两种非晶薄带的晶化激活能E、频率因子Z、反应速率常数K、Avrami指数n。实验证实了Co从3%(原子分数)增大到5%(原子分数)时晶化过程从一步改变为两步晶化;计算结果表明晶化起始温度Tx及晶化峰值温度Tp的晶化激活能、晶化反应速率常数均随Co的增加而增大,其主要原因是增大的频率因子起了关键作用;分析计算结果认为Nd9Fe82.5Co3B5.5在升温速度10K/min时局域Avrami指数n随着晶化体积分数x的增加先急剧降低而后缓慢降低、90%之后又有所升高,表明晶化形核在x12%以三维形核方式为主,在x为12%~36%时晶化以二维形核方式为主,之后直到晶化结束以一维形核方式为主。     

后处理工艺对BST薄膜残余应力的影响的分析

采用射频磁控溅射在Pt/Ti/SiO2/Si（100）衬底上制备了钛酸锶钡（BST）薄膜，利用气氛炉对薄膜进行晶化处理，晶化后薄膜的应力采用XRD表征。研究其残余应力随退火气氛、退火温度以及退火降温速率变化的趋势，通过对不同后处理工艺参数实验结果的分析，得到较优化的工艺参数，以制备较小残余应力的优质BST薄膜。     

电弧离子镀TiSiN薄膜的结构及摩擦性能

为实现电弧离子镀TiSiN薄膜成分可控,通过改变靶的相对电流在304不锈钢表面沉积TiSiN薄膜,采用厚度仪、能谱仪、扫描电镜、X射线衍射仪及摩擦试验研究了其形貌、结构及摩擦性能。结果表明:TiSiN薄膜中Si以非晶态Si3N4形式存在,抑制了面心立方结构的Ti N晶粒生长,形成纳米晶Ti N/非晶Si3N4(nc-Ti N/α-Si3N4)纳米复合结构;与Ti N薄膜相比,TiSiN薄膜具有更平整的表面,Si含量为4.08%(原子分数)时薄膜表面最光滑平整;Ti N薄膜的硬度为2 312 HK左右,掺杂Si元素后,由于细晶强化作用,薄膜的硬度显著提高,Si含量为2.76%(原子分数)时达到最大值,约为3 315 HK;进一步增加Si含量,TiSiN薄膜硬度略有下降;TiSiN薄膜的摩擦系数明显低于Ti N薄膜,且随着Si含量增加,摩擦系数逐渐变小,在Si含量为2.76%和4.08%(原子分数)时低至0.4左右。     

LaNiO3溅射薄膜的光学和电学特性的研究

采用LaNiO3陶瓷靶和射频磁控溅射技术在350℃的K9玻璃衬底上制备出了具有较好（100）择优取向的LaNiO3薄膜。通过对不同厚度薄膜的光学、电学以及薄膜结构等物理特性的测试分析，发现薄膜厚度小于100nm时为非晶结构，厚度大于150nm后出现了具有（100）择优取向的LaNiO3相。非晶结构的LaNiO3具有较高的面电阻和高的光学透射率，而晶化的LaNiO3薄膜具有类似于金属的导电能力和光学特性。薄膜的生长动力学和导电分析结果认为薄膜生长的初期会形成一个非晶过渡层。     

非晶化程度对不同成分Mg-Ni非晶合金电极充放电容量的影响

研究了球磨过程中的非晶化程度对不同成分Mg-Ni非晶合金电化学吸放氢性能的影响。研究结果表明,随着合金成分的不同,非晶化程度的影响不同。当Ni含量低于50％(原子分数)时,合金粉末中的非晶相所占比例越高,即非晶化程度越高时,合金电极的放电容量越大;而当Ni含量高于50％(原子分数)时,非晶合金中存在少量游离态的Ni相,可提高电极的放电量。分析认为这与Ni相的存在改善了合金的吸放氢动力学性能有关。     

U及Si基表面Ti-Al薄膜的制备及组织结构研究

利用Gibbs自由能判据计算了室温和1000 K温度下Ti-Al体系非晶形成成分区间。计算结果表明,Ti-Al非晶形成区间为10%~80%(原子比)Ti。在计算结果的指导下,设计薄膜的成分区间,利用非平衡多靶溅射沉积开展了Ti-Al非晶薄膜在Si和U基上的形成研究。实验在不同脉冲偏压、沉积速率、基体初始温度下进行,薄膜组元成分通过不同靶材的沉积速率来控制完成。利用X射线衍射、扫描电镜、俄歇分析谱仪分析了薄膜的组织结构、表面及界面形貌和成分区间。结果表明,Ti-Al体系在U基上未能获得非晶薄膜,而在Si基上获得了非晶薄膜。所选工艺下,Si基上Ti-Al非晶薄膜形成的成分区间为25%~40%Ti,60%~75%Al。为了能在U基上获得非晶薄膜,加入了第三组元Ni,成功地获得了Ti-Al-Ni非晶薄膜。     

溅射非晶钴硅薄膜的晶化过程及其分析

利用射频磁控溅射方法制备了具有CoSi2成分的非晶薄膜，对非晶薄膜的晶化过程进行了原位X射线分析。结果显示，溅射态薄膜为非晶态，而自由能一成分曲线说明非晶态合金有较低自由能。在非晶晶化过程中初生相为CoSi相，其形成由有效形成热（EHF）因素和结构因素决定。随加热温度升高，非晶薄膜晶化最终得到晶体CoSi2薄膜。     

Crystallization Kinetics of NiTi Films with Different Ni Contents

Three kinds of NiTi films with different Ni contents were prepared by DC magnetron sputtering.The crystallization kinetics of amorphous films was determined by using non-isothermal singlescan techniques. The results show that the activation energy of crystallization of Ni-rich NiTi     

Crystallization kinetics of Zr-33 at % Ni amorphous alloy

The amorphous to crystalline transition in Zr-33 at% Ni amorphous alloy has been found to occur by polymorphic crystallization. The product of the cyrstallization process has been identified as the equilibrium Zr₂Ni intermetallic phase. The kinetics of crystallization have been studied independently using differential scanning calorimetry (DSC) and transmission electron microscopy. The activation energy of crystallization has been evaluated by isothermal and continuous heating in DSC. The isothermal anneals have revealed that the crystallization follows the Johnson-Mehl-Avrami kinetics with an Avrami exponent close to 4. The microstructural changes accompanying crystallization have been studied for an interpretation of the Avrami exponent. The nucleation and growth rates of crystals have been estimated at different temperatures in order to determine the activation energies of the two processes. It has been found that nucleation is thermally activated and growth is interface controlled.     

Crystallization kinetics of amorphous Ga-Sb films extended for phase-change memory

Performance of phase-change materials based on Ga-Te-Sb was found getting better with decreasing Te content in our earlier studies. We concerned much properties of Te-free, Sb-rich binary Ga-Sb, which has been known to possess extremely fast crystallization behavior. Non-isothermal and isothermal crystallization kinetics of amorphous Sb-rich Ga-Sb films were explored by temperature dependent electrical resistance measurements. The crystallization temperature (183 to 261 degrees C) increases with decreasing Sb content (91 to 77 at%). The activation energy and rate-factor vary with Sb contents and reach the maximum at Ga19Sb81. The kinetic exponent is smaller than 1.5 at Sb < 85 at% denoting that the mechanism is one-dimensional crystal-growth from nuclei. The temperature corresponding to 10-year data-retention, evaluated from films, is 180 degrees C (Ga19Sb81) and 137 degrees C (Ga13Sb87), respectively. We verified memory performance using test-devices made of Ga16Sb84 working at voltages with 100 ns pulse-width.     

Oxidation behavior of sputter-deposited Ti–Ni thin films at elevated temperatures

The isothermal oxidation kinetics of sputter-deposited equiatomic Ti–Ni thin films in pure oxygen from 823 to 923 K is studied using thermo-gravimetric analysis. The structure, composition-depth distribution and surface morphology of oxidized Ti–Ni thin films are investigated by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and atomic force microscope (AFM), respectively. The results show that the oxidation kinetics of Ti–Ni thin films obeys a near-parabolic law. TiO₂, TiNi₃ and parent B2 phase are the compositions of oxidized Ti–Ni thin films. A double-layered scale including the outermost layer and the Ni-rich layer is formed outside the B2 matrix of oxidized Ti–Ni thin films. Moreover, thermal oxidation induces a surface smoothening of Ti–Ni thin films and surface roughness of oxidized Ti–Ni films decreases with the increasing oxidation temperature.     

In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon

By covering amorphous silicon (a-Si) with a thin metal film, it is possible to lower the crystallization temperature of the a-Si (typically around 800 °C when using ramp anneals) to levels which can be used in a manufacturing process. This phenomenon of Metal Induced Crystallization (MIC) has been reported previously for Ni, Au and Al. In this work, in-situ X-ray Diffraction was used to study the MIC process for 20 different metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Al). The 7 metals which lower the crystallization temperature the most are Ni, Pt, Pd, Cu, Au, Al and Ag. The crystallization kinetics were studied in detail for these 7 materials. In order to explain the MIC process, two models where used depending on the interaction of the metal with Si (eutectic or compound forming).     

Amorphization reaction during mechanical alloying: influence of the milling conditions

Amorphous Ni-Zr powders have been prepared by mechanical alloying of elemental crystalline powders. The glass-forming range has been determined in detail at different milling intensities. Depending on the milling conditions, at least partial crystallization of the formerly amorphous material can occur from 66 to 75 at% Ni, due to a temperature rise during milling at high intensity. In comparison with isothermal annealing experiments at various temperatures on completely amorphous powder, a relation between milling temperature and milling time is shown. This confirms the similarity of the amorphization process during mechanical alloying with the solid-state interdiffusion reaction in alternating crystalline multilayers.     

The effect of minor additions of titanium on the fracture toughness of Fe-12 at% Ni alloys at−196° C

The reasons for the improvement in the fracture toughness of an Fe-12 at% Ni base alloy at –196° C by the addition of small amounts of Ti were investigated employing transmission electron microscopy (TEM), scanning electron microscopy (SEM) and Auger electron spectroscopy. Ti additions ranging from 0.18 to 0.99 at% and heat treatments of 2 h at 550, 685 and 820° C respectively followed by a water quench were considered, since previous work by Witzke and Stephens had shown that maximumK _IC occurred for an Fe-12 at% Ni-0.18 at% Ti alloy heat treated at 685° C. It was found here thatK _IC at –196° C for all the alloys and heat treatments correlated with the fraction of ductile fracture compared to intergranular and cleavage fracture, the latter modes being predominant in the Fe-12 at% Ni base alloy without Ti additions. Cubic and rectangular shaped inclusions were noted in the SEM fractographs of the alloys with the Ti additions. A fine precipitate was observed by TEM for the Fe-12 at% Ni-0.18 at% Ti alloy heat treated at 550° C; this precipitate was not observed for the 685 and 820° C heat treatments of the same alloy. Auger mappings of the fracture surfaces indicated a weak to moderate association of the interstitials C, N and O with Ti, the degree of which depended on the particular interstitial and the heat treatment temperature. It was concluded that the increase inK _IC due to the initial 0.18 at% addition of Ti was due to a scavenging of interstitials which normally segregate at the grain boundaries and to the refinement of the microstructure. The subsequent decrease inK _IC with further Ti additions was attributed to the increase in flow stress and slight lowering of the fracture stress resulting from these additions. It was further inferred that the Ti additions and heat treatment on the flow and fracture stresses may be due in a large part to their influence on the amount, size and distribution of the precipitate which was observed.     

Isochronal crystallization kinetics of Fe40Ni40B20 amorphous alloy

The kinetics of crystallization of amorphous Fe₄₀Ni₄₀B₂₀ alloy upon isochronal annealing was investigated applying power-compensating differential scanning calorimetry with heating rates of (5, 10, 20, 30, 40) K/min. The corresponding microstructural evolution was studied by means of X-ray diffraction, focused ion beam and scanning electron microscopy, and transmission electron microscopy. Crystallization of Fe₄₀Ni₄₀B₂₀ alloy upon isochronal annealing takes place by formation of nano-scaled grains consisting of a face-centered cubic solid solution phase (Fe,Ni) and an orthorhombic compound phase (Fe,Ni)₃B. Kinetic analysis was performed by application of a modular model of phase transformation kinetics, fitted to all experimental transformation-rate curves simultaneously. The crystallization reaction can be described by nucleation with a continuous nucleation rate incorporating a nucleation index a and by growth in three dimensions according to a linear growth law. The kinetics of transformation and the resulting microstructure observed upon isochronal annealing clearly differ from those upon isothermal annealing investigated in a previous study, reflecting different mechanisms operating upon isochronal and isothermal crystallization.     

TiAl基合金表面改性对高温抗氧化性的影响

研究了渗碳处理ＴｉＡｌ基合金试样的高温氧化行为，发现渗碳处理可以在ＴｉＡｌ基合金试样表层形成致密的多层结构的渗碳层，并发生表层Ａｌ、Ｔｉ重新分配。致密的渗碳层具有良好的高温抗氧化性和高温热稳定性，同时，Ｔｉ、Ａｌ重新分配形成的富Ａｌ最外层也能进一步提高合金的抗氧化性。     

Fe_(63)Ni_1Al_5Ga_2P_(9.65)B_(4.6)Si_3C_(6.75)Co_5非晶合金的晶化行为研究

采用XRD、DSC检测技术,采用连续升温晶化和等温退火晶化方法,研究分析了Fe63Ni1Al5-Ga2P9.65B4.6Si3C6.75Co5非晶薄带的晶化动力学行为和晶化过程中晶化相的析出过程。结果表明,该非晶合金的玻璃转变和晶化行为均具有显著的动力学特征。Kissinger法计算得到的Eg、Ex、Ep1、Ep2分别为750、340、432、689kJ/mol,Eg Ex,表明合金具有较好的热稳定性。合金晶化过程为:非晶→非晶+α-Fe→非晶+α-Fe+Fe2P+Fe3P→α-Fe+Fe2P+Fe3P+Fe3C(Al,Si)+Fe5PB2+SiC。合金的晶化类型为初晶型和随后的共晶型反应。