| 高质量硼掺杂单晶金刚石同质外延及电学性质研究 |
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| 引用本文： | 王若铮,闫秀良,彭博,林芳,魏强,王宏兴.高质量硼掺杂单晶金刚石同质外延及电学性质研究[J].人工晶体学报,2022,51(5):893-900. |
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| 作者姓名： | 王若铮 闫秀良 彭博 林芳 魏强 王宏兴 |
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| 作者单位： | 1.西安交通大学,电子物理与器件教育部重点实验室,西安 710049; 2.西安交通大学电子与信息学部,宽禁带半导体与量子器件研究所,西安 710049 |
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| 基金项目： | 国家自然科学基金(61627812)；;国家重点研发计划(2018YFE0125900)； |
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| 摘 要： | 突破高质量、高效金刚石掺杂技术是实现高性能金刚石功率电子器件的前提。本文利用微波等离子体化学气相沉积(MPCVD)法,以三甲基硼为掺杂源,制备出表面粗糙度0.35 nm,XRD(004)摇摆曲线半峰全宽28.4 arcsec,拉曼光谱半峰全宽3.05 cm-1的高质量硼掺杂单晶金刚石。通过改变气体组分中硼元素的含量,实现了1016~1020 cm-3的p型金刚石可控掺杂工艺。随后,研究了硼碳比、生长温度、甲烷浓度等工艺条件对p型金刚石电学特性的影响,结果表明:在硼碳比20×10-6、生长温度1 100 ℃、甲烷浓度8%、腔压160 mbar(1 mbar=100 Pa)时p型金刚石迁移率达到207 cm2/(V·s)。通过加氧生长可以提升硼掺杂金刚石结晶质量,降低杂质散射。当氧气浓度为0.8%时,样品空穴迁移率提升至 614 cm2/(V·s)。
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| 关 键 词： | 单晶金刚石 p型掺杂 硼掺杂 MPCVD 同质外延 硼碳比 甲烷浓度 硼氧共掺 空穴迁移率 |
| 收稿时间： | 2022-02-04 |
Homoepitaxial Boron Doped Single Crystal Diamond and Its Electrical Properties |
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| WANG Ruozheng,YAN Xiuliang,PENG Bo,LIN Fang,WEI Qiang,WANG Hongxing.Homoepitaxial Boron Doped Single Crystal Diamond and Its Electrical Properties[J].Journal of Synthetic Crystals,2022,51(5):893-900. |
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| Authors: | WANG Ruozheng YAN Xiuliang PENG Bo LIN Fang WEI Qiang WANG Hongxing |
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| Affiliation: | 1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an 710049, China; 2. Institute of Wide Band Gap Semiconductors and Quantum Devices, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China |
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| Abstract: | The breakthrough of high quality and high efficiency diamond doping is the premise of realizing high-performance diamond power electronic devices. In this paper, the homoepitaxial growth of high-quality boron doped single crystal diamond was prepared by MPCVD with trimethylboron as the source gas. The surface roughness is 0.35 nm, the full width at half maximum (FWHM) of XRD (004) rocking curves is 28.4 arcsec, and the FWHM of Raman spectrum is 3.05 cm-1. By changing the boron concentration in the gas component, the controlled p-type diamond doping with the concentration from 1016 cm-3 to 1020 cm-3 was realized. Then, the effects of deposition conditions such as B/C ratio, growth temperature and methane content on the electrical properties of p-type diamond were studied. The hole mobility of 207 cm2/(V·s) has been obtained with the B/C ratio of 20×10-6, the growth temperature of 1 100 ℃, the CH4/H2 ratio of 8% and the chamber pressure of 160 mbar. Furthermore, the crystal quality of boron doped diamond can be improved with the adding of oxygen in the gas component, that is to say, reducing the impurity scattering. When the O2/H2 ratio is 0.8%, the hole mobility increases significantly to 614 cm2/(V·s). |
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| Keywords: | single crystal diamond p-type doping boron doping MPCVD homoepitaxial B/C ratio methane concentration B-O co-doping hole mobility |
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