| Growth of Indium Nanorods by Magnetron Sputtering |
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| 作者姓名： | 魏合林 黄汉臣 张西祥 |
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| 作者单位： | [1]Department of Physics, Huazhong University of Science and Technology, Wuhan 430074 [2]Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA [3]Department of Physics and Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Hong Kong |
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| 基金项目： | Supported by the Research Grants Council of the Hong Kong Special Administrative Region （PolyU 1/99C, PolyU 5146/99E and PolyU 5152/00E and HKUST 6165/01P）. |
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| 摘 要： | Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmission electron microscopy （HRTEM）, and x-ray diffraction. It is found that the mean diameter of the nanorods ranges from 30nm to 100nm and the height ranges from 30nm to 200nm. The HRTEM investigations show that the indium nanorods are single crystals and grow along the 100] axis. The nanorods grow from the facets near the surface undulation that is caused by compressive stress in the indium grains generated during grain coalescence process. For low melting point and high diffusivity metal, such as bismuth and indium, this spontaneous nanorod growth mechanism can be used to fabricate nanostructures.
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| 关 键 词： | 铟纳米棒 磁电管喷 显微结构 电子显微术 |
| 收稿时间： | 2006-03-01 |
| 修稿时间： | 2006-03-01 |
Growth of Indium Nanorods by Magnetron Sputtering |
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| WEI He-Lin,HUANG Han-Chen,ZHANG Xi-Xiang.Growth of Indium Nanorods by Magnetron Sputtering[J].Chinese Physics Letters,2006,23(6):1627-1630. |
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| Authors: | WEI He-Lin HUANG Han-Chen ZHANG Xi-Xiang |
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| Affiliation: | Department of Physics, Huazhong University of Science and Technology, Wuhan 430074
Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA
Department of Physics and Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Hong Kong |
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| Abstract: | Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), and x-ray diffraction. It is found that the mean diameter of the nanorods ranges from 30nm to 100nm and the height ranges from 30nm to 200nm. The HRTEM investigations show that the indium nanorods are single crystals and grow along the 100] axis. The nanorods grow from the facets near the surface undulation that is caused by compressive stress in the indium grains generated during grain coalescence process. For low melting point and high diffusivity metal, such as bismuth and indium, this spontaneous nanorod growth mechanism can be used to fabricate nanostructures. |
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| Keywords: | 81 07 -b 61 46 +w 81 15 Cd |
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