| 基于4H-SiC的高能量分辨率α粒子探测器 |
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| 引用本文： | 吴健,蒋勇,甘雷,李勐,邹德慧,荣茹,鲁艺,李俊杰,范晓强.基于4H-SiC的高能量分辨率α粒子探测器[J].强激光与粒子束,2015,27(1):014004. |
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| 作者姓名： | 吴健 蒋勇 甘雷 李勐 邹德慧 荣茹 鲁艺 李俊杰 范晓强 |
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| 作者单位： | 1.中国工程物理研究院 核物理与化学研究所, 四川 绵阳 621 900; |
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| 基金项目： | 国家自然科学基金项目(11205140, 11475151); 中国工程物理研究院中子物理学重点实验室资助课题(2013AC01, 2013BC01); 中国工程物理研究院核物理与化学研究所科技创新基金项目(2011CX02) |
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| 摘 要： | 为突破传统半导体核探测器耐高温与抗辐照性能不足的瓶颈,采用4H-SiC宽禁带半导体材料研制了4H-SiC探测器,并研究其构成的探测系统对α粒子的能量分辨率和能量线性度。所研制4H-SiC探测器漏电流低,当外加反向偏压为200V时,其漏电流仅14.92nA/cm2。采用具有5种主要能量α粒子的226 Ra源研究其构成的探测系统对α粒子的能量分辨率,获得4H-SiC探测系统对4.8~7.7 MeV能量范围内α粒子的能量分辨率为0.61%~0.90%,与国际上报道的高分辨4H-SiC探测系统能量分辨率一致。同时,实验结果表明:4H-SiC探测系统对该能量范围内α粒子的能量线性度十分优异,线性相关系数为0.999 99。
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| 关 键 词： | 能量分辨率 半导体探测器 碳化硅 |
| 收稿时间： | 2014/8/25 |
High-resolution alpha-particle spectrometry based on 4H silicon carbide semiconductor detectors |
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| Affiliation: | 1.Institute of Nuclear Physics and Chemistry,CAEP,Mianyang 621900,China;2.Key Laboratory of Neutron Physics,CAEP,Mianyang 621900,China |
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| Abstract: | Semiconductor detectors made of 4H-SiC material are desirable for applications in harsh environments with high temperature and/or intense radiation. We report the energy resolution and energy linearity of 4H-SiC semiconductor detector using as an alpha particle spectrometer. The leakage current of the 4H-SiC detector is only 14.92 nA/cm2, when a reverse bias of 200 V is applied on it. The energy resolution and energy linearity of 4H-SiC detector are studied using a 226Ra alpha source. The energy resolution of the 4H-SiC detector is 0.61%-0.90% for the 4.8-7.7 MeV alpha particles, which is comparable with the energy resolution results of commercial silicon detectors. The energy linearity of the 4H-SiC detector is very attractive, with the linearly dependent coefficient as good as 0.999 99. This work demonstrates the outstanding energy resolution and energy linearity properties of 4H-SiC semiconductor detectors. |
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| Keywords: | energy resolution semiconductor detector SiC |
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