| Spontaneous Hillock Growth on Indium Film Surface |
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| 作者姓名： | 魏合林 张西祥 黄汉臣 |
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| 作者单位： | [1]Department of Physics, Huazhong University of Science and Technology, Wuhan 430074 [2]Department of Physics and Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Hong Kong [3]Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA |
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| 基金项目： | Supported by the Research Council of the Hong Kong Special Administrative Region （PolyU 1/99C, PolyU 5146/99E and PolyU 5152/00E and HKUST 6165/01P）. |
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| 摘 要： | Uniformly distributed indium hillocks are grown on silicon substrates by dc magnetron sputtering. The morphologies and the microstructures have been investigated by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and x-ray diffraction （XRD）. From the TEM and SEM images, we find that, at the earlier stage, the grain coalescent process dominates. This coalescent process induces a larger compressive stress. We believe that the drive force for hillock growth comes from this compressive stress. Under this compressive stress, the grain locating in the middle of several grains are extruded from these grains, and then a hillock forms with the increasing deposition time. For low melting point and high diffusion coefficient metal, such as bismuth and indium, this spontaneous-hillock growth mechanism can be used to fabricate well aligned nanostructures.
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| 关 键 词： | 自发生长 铟薄膜 硅衬底 显微结构 |
| 收稿时间： | 2006-02-23 |
| 修稿时间： | 2006-02-23 |
Spontaneous Hillock Growth on Indium Film Surface |
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| WEI He-Lin, ZHANG Xi-Xiang, HUANG Han-Chen.Spontaneous Hillock Growth on Indium Film Surface[J].Chinese Physics Letters,2006,23(7):1880-1883. |
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| Authors: | WEI He-Lin ZHANG Xi-Xiang HUANG Han-Chen |
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