| Phase Transition of Graphitic-C3N4 under High Pressure by In Situ Resistance Measurement in a Diamond Anvil Cell |
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| 作者姓名： | 韩永昊 骆继锋 高春晓 马红安 郝爱民 李延春 李晓东 刘景 李明 刘洪武 邹广田 |
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| 作者单位： | [1]StateKeyLaboratoryforSuperhardMaterials,InstituteofAtomicandMolecularPhysics,JilinUniversity,Changchun130012 [2]BeijingSynchrotronRadiationLaboratory,InstituteofHighEnergyPhysics,ChineseAcademyofSciences,Beijing100039 |
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| 摘 要： | In situ resistance measurement of Graphitic-C3N4 has been performed under high pressure in a diamond anvil cell. The result reveals that there are changes of electron transport behaviour. As the pressure increases from ambient to 30 GPa, three abnormal resistance changes can be found at room temperature and two are found at 77K. The abnormal resistance dropped at 5 GPa is close to the phase transition pressure from the P6m2 structure to the p structure predicted by Lowther et al. Phys. Reg. B 59 (1999) 11683] Another abnormal change of resistance at 12 GPa is related to the phase transition from g-C3N4 to cubic-C3N4 Teter and Hemley, Science 271 (1990) 53].
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| 关 键 词： | 相迁移 高压条件 石墨-四氮化三碳 超硬材料 宝石合成 |
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