| Study of a 4H-SiC epitaxial n-channel MOSFET |
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| 作者姓名： | 汤晓燕 张玉明 张义门 |
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| 作者单位： | School of Microelectronics, Key Laboratory of
Wide Band-Gap Semiconductor Materials and Devices, Xidian University,
Xi'an {\rm
710071, China |
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| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant No.~60876061) and
Advanced Research Foundation (Grant No.~51308040302). |
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| 摘 要： | Epitaxial channel metal-oxide semiconductor field-effect
transistors (MOSFETs) have been proposed as one possible way to
avoid the problem of low inversion layers in traditional MOSFETs.
This paper presents an equation of maximum depletion width modified
which is more accurate than the original equation. A 4H--SiC epitaxial
n-channel MOSFET using two-dimensional simulator ISE is simulated.
Optimized structure would be realized based on the simulated results
for increasing channel mobility.
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| 关 键 词： | SiC epitaxial layer MOSFET mobility |
| 收稿时间： | 2009-07-13 |
Study of a 4H－SiC epitaxial n-channel MOSFET |
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| Tang Xiao-Yan,Zhang Yu-Ming and Zhang Yi-Men.Study of a 4H-SiC epitaxial n-channel MOSFET[J].Chinese Physics B,2010,19(4):47204-047204. |
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| Authors: | Tang Xiao-Yan Zhang Yu-Ming and Zhang Yi-Men |
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| Affiliation: | School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
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| Abstract: | Epitaxial channel metal-oxide semiconductor field-effect
transistors (MOSFETs) have been proposed as one possible way to
avoid the problem of low inversion layers in traditional MOSFETs.
This paper presents an equation of maximum depletion width modified
which is more accurate than the original equation. A 4H--SiC epitaxial
n-channel MOSFET using two-dimensional simulator ISE is simulated.
Optimized structure would be realized based on the simulated results
for increasing channel mobility. |
| |
| Keywords: | SiC epitaxial layer MOSFET mobility |
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