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Design of high-repetition frequency gating circuit for cathode of image intensifier北大核心CSCD
引用本文:宋海浩,延波,倪小兵,智强,李梦依,刘佳音,任莹楠,司可,张琳琳.Design of high-repetition frequency gating circuit for cathode of image intensifier北大核心CSCD[J].应用光学,2022,43(6):1187-1195.
作者姓名:宋海浩  延波  倪小兵  智强  李梦依  刘佳音  任莹楠  司可  张琳琳
作者单位:1.微光夜视技术重点实验室,陕西 西安 710065
基金项目:国防基础科研项目(JCKY2018208B016)
摘    要:According to the requirements of high repetition frequency, fast edge speed and small pulse width for cathode gating signal by range-gated technology, a cathode high repetition frequency gating circuit using period and multi-stage acceleration was proposed. By combining the RC circuit and the high-speed gate circuit, the time bias circuit unit was cascaded to generate logic pulses with different time sequences, which could respectively control the intermediate stage drive MOSFET to generate three phased drive signals, and the output of the intermediate stage drive was used as input of the output-stage MOSFET to control the acceleration and retention of its on-off process. It was verified by software simulation and board-level test. The test results show that the proposed gating circuit can increase the edge time of output pulse from μs level to 2 ns, and can provide +50 V/−200 V cathode off/on voltage, so as to achieve a repetition frequency ranging from 0~350 kHZ, a duty ratio of 0~100%, a minimum pulse width of 3.7 ns, and a pulse output delay time jitter of about 0.1 ns. It has important guiding significance for improving the minimum pulse width performance of high-speed and high-voltage gating power, the highest working repetition frequency and reducing the power loss of the device. © 2022 Editorial office of Journal of Applied Optics. All rights reserved.

关 键 词:像增强器  选通电路  MOSFET  高重频
收稿时间:2022-08-12

Design of high-repetition frequency gating circuit for cathode of image intensifier
Song H.,Yan B.,Ni X.,Zhi Q.,Li M.,Liu J.,Ren Y.,Si K.,Zhang L..Design of high-repetition frequency gating circuit for cathode of image intensifier[J].Journal of Applied Optics,2022,43(6):1187-1195.
Authors:Song H  Yan B  Ni X  Zhi Q  Li M  Liu J  Ren Y  Si K  Zhang L
Affiliation:1.Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China2.Kunming Institute of Physics, Kunming 650223, China
Abstract:According to the requirements of high repetition frequency, fast edge speed and small pulse width for cathode gating signal by range-gated technology, a cathode high repetition frequency gating circuit using period and multi-stage acceleration was proposed. By combining the RC circuit and the high-speed gate circuit, the time bias circuit unit was cascaded to generate logic pulses with different time sequences, which could respectively control the intermediate stage drive MOSFET to generate three phased drive signals, and the output of the intermediate stage drive was used as input of the output-stage MOSFET to control the acceleration and retention of its on-off process. It was verified by software simulation and board-level test. The test results show that the proposed gating circuit can increase the edge time of output pulse from μs level to 2 ns, and can provide +50 V/?200 V cathode off/on voltage, so as to achieve a repetition frequency ranging from 0~350 kHZ, a duty ratio of 0~100%, a minimum pulse width of 3.7 ns, and a pulse output delay time jitter of about 0.1 ns. It has important guiding significance for improving the minimum pulse width performance of high-speed and high-voltage gating power, the highest working repetition frequency and reducing the power loss of the device.
Keywords:gating circuit  high repetition frequency  image intensifier  MOSFET
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