| Theoretical study of quantum confined Stark shift in InAs／GaAs quantum dots |
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| 引用本文： | 郭汝海,时红艳,孙秀冬.Theoretical study of quantum confined Stark shift in InAs／GaAs quantum dots[J].中国物理 B,2004,13(12):2141-2146. |
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| 作者姓名： | 郭汝海 时红艳 孙秀冬 |
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| 作者单位： | Department of Applied Physics, Harbin Institute of Technology, Harbin 150001, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 90201003), the Programme from the Ministry of Education for Distinguished Young Teacher and the Foundation of Heilongjiang Province for the Returned Overseas Chinese Scholars (Grant No LC01C11). |
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| 摘 要： | The quantum confined Stark effect (QCSE) of the self-assembled InAs/GaAs quantum dots has been investigated theoretically. The ground-state transition energies for quantum dots in the shape of a cube, pyramid or “truncated pyramid” are calculated and analysed. We use a method based on the Green function technique for calculating thestrain in quantum dots and an efficient plane-wave envelope-function technique to determine the ground-state electronic structure of them with different shapes. The symmetry of quantum dots is broken by the effect of strain. So the properties of carriers show different behaviours from the traditional quantum device. Based on these results, we also calculate permanent built-in dipole moments and compare them with recent experimental data. Our results demonstrate that the measured Stark effect in self-assembled InAs/GaAs quantum dot structures can be explained by including linear grading.
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| 关 键 词： | 量子约束斯塔克效应 半导体 量子点 平面波 |
| 收稿时间： | 6/1/2004 12:00:00 AM |
| 修稿时间： | 8/4/2004 12:00:00 AM |
Theoretical study of quantum confined Stark shift in InAs/GaAs quantum dots |
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| Guo Ru-Hai,Shi Hong-Yan and Sun Xiu-Dong.Theoretical study of quantum confined Stark shift in InAs/GaAs quantum dots[J].Chinese Physics B,2004,13(12):2141-2146. |
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| Authors: | Guo Ru-Hai Shi Hong-Yan and Sun Xiu-Dong |
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| Affiliation: | Department of Applied Physics, Harbin Institute of Technology, Harbin 150001, China |
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| Abstract: | The quantum confined Stark effect (QCSE) of the self-assembled InAs/GaAs quantum dots has been investigated theoretically. The ground-state transition energies for quantum dots in the shape of a cube, pyramid or "truncated pyramid" are calculated and analysed. We use a method based on the Green function technique for calculating the strain in quantum dots and an efficient plane-wave envelope-function technique to determine the ground-state electronic structure of them with different shapes. The symmetry of quantum dots is broken by the effect of strain. So the properties of carriers show different behaviours from the traditional quantum device. Based on these results, we also calculate permanent built-in dipole moments and compare them with recent experimental data. Our results demonstrate that the measured Stark effect in self-assembled InAs/GaAs quantum dot structures can be explained by including linear grading. |
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| Keywords: | quantum dots plane-wave expansion self-assembled quantum confined Stark effect |
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