Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier |
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| Authors: | Ma Xiao-Hu Yu Hui-You Quan Si Yang Li-Yuan Pan Cai-Yuan Yang Ling Wang Hao Zhang Jin-Cheng and Hao Yue |
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| Affiliation: | School of Technical Physics, Xidian University, Xi'an 710071, China; Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Physics Technology, Xidian University, Xi'an 710071, China |
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| Abstract: | An enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMTs) was fabricated with 15-nm AlGaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around --1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs (--3.5 V). Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-μ m gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/mm, respectively. Compared with the 22-nm barrier E-mode devices, VT of the thin barrier HEMTs is much more stable under the gate step-stress. |
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| Keywords: | high electron mobility transistors AlGaN/GaN thin barrier fluorine plasma treatment threshold voltage |
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