Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films |
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| Authors: | Liu Xue-Chao Chen Zhi-Zhan Shi Er-Wei Liao Da-Qian Zhou Ke-Jin |
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| Affiliation: | Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China; Department of Physics, The University of Warwick, Coventry, CV4 7AL, United Kingdom; Swiss Light Source, Paul Scherrer Institut, 5232 Villigen PSI, Switzerland |
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| Abstract: | This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co2+ and Ga3+ ions substitute for Zn2+ ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed. |
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| Keywords: | diluted magnetic semiconductors (Ga Co)-codoped ZnO anomalous Hall effect magnetroresisance |
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