| 溅射功率和溅射时间对Mg2Si纳米晶薄膜结构和电阻率的影响 |
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| 引用本文： | 廖杨芳,谢泉.溅射功率和溅射时间对Mg2Si纳米晶薄膜结构和电阻率的影响[J].人工晶体学报,2021,50(9):1675-1680. |
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| 作者姓名： | 廖杨芳 谢泉 |
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| 作者单位： | 1.贵州师范大学物理与电子科学学院,贵阳 550001;2.贵州大学大数据与信息工程学院,贵阳 550025 |
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| 基金项目： | 贵州省科技计划(黔科合基础[2019]1225号);贵州师范大学资助博士科研项目(GZNUD[2018]15号) |
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| 摘 要： | 采用射频磁控溅射在蓝宝石衬底上制备了Mg2Si纳米晶薄膜,研究了Mg2Si烧结靶溅射功率(90~140 W)及溅射时间(10~60 min)对Mg2Si薄膜的结构和电阻率的影响。结果表明:随着溅射功率增加,样品的XRD衍射峰逐渐增强;但当功率超过100 W时,样品中出现了偏析出来的单质Mg。随着溅射时间增加,样品的XRD强度先增强后减弱,溅射时间为40 min时,样品的XRD衍射峰最强;继续增加溅射时间,样品中出现微弱的MgO衍射峰。所有样品均呈现出Mg2Si晶体的特征拉曼峰,即256 cm-1附近的F2g模及347 cm-1附近的F1u(LO)模。随着溅射功率增加,样品的电阻率减小;随着溅射时间增加,样品的电阻率先减小后增大,溅射时间为40 min时,样品的电阻率最小。
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| 关 键 词： | Mg2Si 薄膜 射频磁控溅射 溅射功率 溅射时间 电阻率 |
| 收稿时间： | 2021-05-19 |
Effects of Sputtering Power and Sputtering Time on the Structure and Resistivity of Mg2Si Nanocrystalline Thin Films |
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| LIAO Yangfang,XIE Quan.Effects of Sputtering Power and Sputtering Time on the Structure and Resistivity of Mg2Si Nanocrystalline Thin Films[J].Journal of Synthetic Crystals,2021,50(9):1675-1680. |
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| Authors: | LIAO Yangfang XIE Quan |
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| Affiliation: | 1. College of Physics and Electronic Sciences, Guizhou Normal University, Guiyang 550001, China;2. College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China |
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| Abstract: | Nanocrystalline Mg2Si thin films were prepared on sapphire substrate by radio frequency (RF) magnetron sputtering using Mg2Si sintered target. The effects of sputtering power (90 W to 140 W) and sputtering time (10 min to 60 min) on structure and resistivity of Mg2Si thin films were investigated. The results show that with the increase of sputtering power, the XRD diffraction peak of the sample gradually increases. However, when the power exceeds 100 W, elemental Mg segregation appears in the samples. With the increase of sputtering time, the XRD intensity of the sample first increases and then decreases. When the sputtering time is 40 min, the XRD diffraction peak of the sample is the strongest. With the increase of sputtering time, a weak MgO diffraction peak appears in the sample. All the samples show the characteristic Raman peaks of Mg2Si crystal, namely, the F2g mode near 256 cm-1 and the F1u (LO) mode near 347 cm-1. With the increase of sputtering power, the resistivity of the sample decreases.With the increase of sputtering time, the resistivity of the sample first decreases and then increases. When the sputtering time is 40 min, the resistivity of the sample is the minimum. |
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| Keywords: | Mg2Si thin film RF magnetron sputtering sputtering power sputtering time resistivity |
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