| 衬底材料对制备立方氮化硼薄膜的影响 |
| |
| 引用本文： | 陈光华,邓金祥,张生俊,宋雪梅,王波,严辉. 衬底材料对制备立方氮化硼薄膜的影响[J]. 物理学报, 2001, 50(1): 83-87 |
| |
| 作者姓名： | 陈光华 邓金祥 张生俊 宋雪梅 王波 严辉 |
| |
| 作者单位： | 北京工业大学材料学院, |
| |
| 基金项目： | 国家自然科学基金(批准号：69876003，19874007)和北京市自然科学基金资助的课题.Project supported by the National Natural Science Foundation of China (GrantNo.69876003,19874007). |
| |
| 摘 要： | 较系统地研究了不同衬底材料对制备氮化硼薄膜的影响。用热丝增强射频等离子体CVD法，以NH3，B2H6和H2为反应气体，在Si,Ni,Co和不锈钢等衬底材料上，成功生长出高质量的立方氮化硼薄膜，还用13.56MHz的射频溅射系统将c-BN薄膜沉积在Si衬底上，靶材为h-BN(纯度为99.99％），溅射气体为氩气和氮气的混合气体，所得到的氮化硼薄膜中立方相含量高于90%，用X射线衍射谱和傅里叶变换红谱对样品进行了分析表明，衬底材料与c-BN的晶格匹配情况，对于CVD生长立方氮化硼薄膜影响很大，而对溅射生长立方氮化硼薄膜影响不大。
|
| 关 键 词： | 立方氮化硼薄膜 衬底 热丝CVD 射频溅射 |
| 修稿时间： | 2000-06-15 |
INFLUENCE OF SUBSTRATES ONTHE FORMATION OF c-BN THIN FILMS |
| |
| CHEN Guang-hua,DENG Jin-xiang,ZHANG Sheng-jun,SONG Xue-mei,WANG BO,YAN HUI. INFLUENCE OF SUBSTRATES ONTHE FORMATION OF c-BN THIN FILMS[J]. Acta Physica Sinica, 2001, 50(1): 83-87 |
| |
| Authors: | CHEN Guang-hua DENG Jin-xiang ZHANG Sheng-jun SONG Xue-mei WANG BO YAN HUI |
| |
| Abstract: | The influence of substrates on the formation of cubic boron nitride(c-BN) thin films was reported.The c-BN thin films were deposited on different substrates with hot-filament-assisted plasma CVD and RF sputter.In the CVD method,NH3,B2H6 and H2 were reacting gases,and Si,Ni,Co,stainless steel and other materials were substrates.The experiments showed that the cubic phase content in c-BN thin films was affected by substrates.The film on Ni substrate was the best among all the substrates in the CVD method,and its cubic phase content reached over 80%.Our study also found that in the CVD method a Ni interlayer on the Si substrate can improve the quality of the c-BN thin films than directly on Si substrate.In the sputter method,the working gas was N2 and Ar,hot-pressed hexagonal boron nitride(h-BN) of 4N purity was used as sputtering target,the c-BN thin film with over 90% content of cubic phase was successively deposited on Si substrate.In our research,the boron nitride thin films were characterized by Fourier Transform Infrared(FTIR) Spectra and X-ray diffraction. Finally we concluded that for CVD method the cubic phase content and adhesion are highly affected by the crystal lattice mismatch between c-BN and substrate materials;however,for sputter method the crystal lattice mismatch between c-BN and substrate materials little affects the quality of c-BN thin films. |
| |
| Keywords: | c|BN thin film substrate hot filament CVD RF sputter |
| 本文献已被 维普 万方数据 等数据库收录！ |
|
