| Threshold flux-controlled memristor model and its equivalent circuit implementation |
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| 作者姓名： | 武花干 包伯成 陈墨 |
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| 作者单位： | School of Eelctronic and Optical Engineering, Nanjing University of Science and Technology;School of Information Science and Engineering, Changzhou University |
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| 摘 要： | Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive device is assumed to exist whose ionic drift direction is perpendicular to the direction of the applied voltage, upon which, corresponding to the HP charge-controlled memristor model, a novel threshold flux-controlled memristor model with a window function is proposed. The fingerprints of the proposed model are analyzed. Especially, a practical equivalent circuit of the proposed model is realized, from which the corresponding experimental fingerprints are captured. The equivalent circuit of the threshold memristor model is appropriate for various memristors based breadboard experiments.
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| 关 键 词： | captured assumed commercially operational amplifier hysteresis perpendicular drift posed simplified |
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