首页 | 官方网站   微博 | 高级检索  
     


Near‐Infrared and Short‐Wavelength Infrared Photodiodes Based on Dye–Perovskite Composites
Authors:Qianqian Lin  Zhiping Wang  Margaret Young  Jay B. Patel  Rebecca L. Milot  Laura Martinez Maestro  Richard R. Lunt  Henry J. Snaith  Michael B. Johnston  Laura M. Herz
Affiliation:1. Clarendon Laboratory, University of Oxford, Oxford, UK;2. Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, USA
Abstract:Organohalide perovskites have emerged as promising light‐sensing materials because of their superior optoelectronic properties and low‐cost processing methods. Recently, perovskite‐based photodetectors have successfully been demonstrated as both broadband and narrowband varieties. However, the photodetection bandwidth in perovskite‐based photodetectors has so far been limited to the near‐infrared regime owing to the relatively wide band gap of hybrid organohalide perovskites. In particular, short‐wavelength infrared photodiodes operating beyond 1 µm have not yet been realized with organohalide perovskites. In this study, narrow band gap organic dyes are combined with hybrid perovskites to form composite films as active photoresponsive layers. Tuning the dye loading allows for optimization of the spectral response characteristics and excellent charge‐carrier mobilities near 11 cm2 V?1 s?1, suggesting that these composites combine the light‐absorbing properties or IR dyes with the outstanding charge‐extraction characteristics of the perovskite. This study demonstrates the first perovskite photodiodes with deep near‐infrared and short‐wavelength infrared response that extends as far as 1.6 µm. All devices are solution‐processed and exhibit relatively high responsivity, low dark current, and fast response at room temperature, making this approach highly attractive for next‐generation light‐detection techniques.
Keywords:dye  near‐infrared  perovskite  photodiode  short‐wavelength infrared
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司    京ICP备09084417号-23

京公网安备 11010802026262号