Band alignment in SiC-based one-dimensional van der Waals homojunctions |
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| Affiliation: | 1.Department of Physics, Chongqing Three Gorges University, Wanzhou 404100, China;2.School of Information Engineering, Hubei Minzu University, Enshi 445000, China |
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| Abstract: | The density functional theory method is utilized to verify the electronic structures of SiC nanotubes (SiCNTs) and SiC nanoribbons (SiCNRs) one-dimensional (1D) van der Waals homojunctions (vdWh) under an applied axial strain and an external electric field. According to the calculated results, the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-II band alignment and robust electronic structures with different diameters or widths. Furthermore, the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-I band alignment, respectively, in a range of[-0.3, -0.1] V/Å and[0.1, 0.3] V/Å and change into metal when the electric field intensity is equal to or higher than 0.4 V/Å. Interestingly, the SiCNTs/SiCNRs 1D vdWhs have robust electronic structures under axial strain. These findings demonstrate theoretically that the SiCNTs/SiCNRs 1D vdWhs can be employed in nanoelectronics devices. |
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| Keywords: | SiCNTs/SiCNRs one-dimensional (1D) van der Waals homojunctions (vdWh) electronic structure external electric field axial strain |
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