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High sensitivity Hall devices with AlSb/InAs quantum well structures |
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| Affiliation: | a Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, Beijing 100083, China;b Material Science Center，Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| Abstract: | AlSb/InAs quantum well (QW) structures and InAs films on GaAs (001) substrates were grown by molecular beam epitaxy (MBE). We investigated the dependence of electron mobility and two-dimensional electron gas (2DEG) concentration on the thickness of an InAs channel. It is found that electron mobility as high as 19050 cm2·V-1·s-1 has been achieved for an InAs channel of 22.5 nm. The Hall devices with high sensitivity and good temperature stability were fabricated based on the AlSb/InAs QW structures. Their sensitivity is markedly superior to Hall devices of InAs films. |
| Keywords: | antimonide semiconductors quantum well molecular beam epitaxy |
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