| 气相输运沉积制备化合物薄膜材料的研究进展 |
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| 引用本文： | 景宝堂,钟敏,袁文宾,张宇峰.气相输运沉积制备化合物薄膜材料的研究进展[J].人工晶体学报,2020,49(2):358-362. |
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| 作者姓名： | 景宝堂 钟敏 袁文宾 张宇峰 |
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| 作者单位： | 渤海大学新能源学院,锦州 121013;辽宁省光电功能材料与检测重点实验室,锦州 121013;渤海大学新能源学院,锦州 121013 |
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| 基金项目： | 国家自然科学基金(61575029,61474009)。 |
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| 摘 要： | 相比用于制备晶体材料的化学气相输运(Chemical Vapor Transport,CVT)方法,近空间气相输运沉积(Close-spaced Vapor Transport Deposition,CSVT)及气相输运沉积(Vapor Transport Deposition,VTD)方法不为人们所熟知.近几年来,气相输运沉积逐渐应用于锑基薄膜(Sb2 Se3、Sb2 S3及Sb2(Se,S)3)、锡基薄膜(SnS、SnS2)及铋基薄膜(Bi2 Se3、Bi2 Te3)等材料的制备,有可能成为一种重要的材料制备方法.本文综述了气相输运沉积用于化合物薄膜制备的研究进展,对其特点进行分析,并对其发展趋势进行了展望.
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| 关 键 词： | 气相输运沉积 近空间气相输运沉积 化合物薄膜 |
Research Progress on Preparation of Compound Thin Films by Vapor Transport Deposition |
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| JIN Baotang,ZHONG Min,YUAN Wenbin,ZHANG Yufeng.Research Progress on Preparation of Compound Thin Films by Vapor Transport Deposition[J].Journal of Synthetic Crystals,2020,49(2):358-362. |
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| Authors: | JIN Baotang ZHONG Min YUAN Wenbin ZHANG Yufeng |
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| Affiliation: | (College of New Energy,Bohai University,Jinzhou 121013,China;Liaoning Key Laboratory of Optoelectronic Functional Materials Testing and Technology,Jinzhou 121013,China) |
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| Abstract: | Compared with the chemical vapor transport(CVT)method used for preparation of crystals,close-spaced vapor transport deposition(CSVT)and vapor transport deposition(VTD)are less well known.In recent years,vapor transport deposition has been gradually applied to the preparation of antimony-based thin films(Sb2Se3,Sb2S3 and Sb2(Se,S)3),tin-based thin films(SnS,SnS2)and bismuth-based thin films(Bi2Se3,Bi 2Te 3)and so on,which may become an important method for material preparation.In this paper,the research progress of vapor transport deposition for compound thin films is reviewed,its characteristics are analyzed,and its development trend is prospected. |
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| Keywords: | VTD(vapor transport deposition) CSVT(close-spaced vapor transport deposition) compound thin film |
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