| Effects of Substrate Temperature and Nitrogen Pressure on Growth of AIN Films by Pulsed Laser Deposition |
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| 引用本文： | 吕磊 李清山 李丽 张立春 王彩凤 齐红霞. Effects of Substrate Temperature and Nitrogen Pressure on Growth of AIN Films by Pulsed Laser Deposition[J]. 中国物理快报, 2007, 24(2): 552-554 |
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| 作者姓名： | 吕磊 李清山 李丽 张立春 王彩凤 齐红霞 |
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| 作者单位： | Department of Physics, Qufu Normal University, Shandong 273165 |
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| 基金项目： | Supported by the Nature Science Foundation of Shandong Province under Grant No Y2002A04. |
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| 摘 要： | Highly oriented aluminium nitride （AIN） films are grown on p-Si （100） substrates by pulsed laser deposition, and their characteristics of structure and composition are studied by x-ray diffraction, Fourier transform infrared spectroscopy and scanning electron microscopy. The results show that the deposited films exhibit good crystalline properties with a sharp x-ray diffraction peak at 2θ= 33.15 ° corresponding to AIN h （100） crystalline orientation. The influences of substrate temperature and ambient nitrogen （N2） pressure on the crystallinity of A1N films are remarkable. At room temperature, when the ambient N2 pressure arises from 5 × 10^-6 Pa to 5 Pa, the crystallinity of the film becomes better. When the substrate temperature is 600℃, the film has the best crystallinity at 0.05 Pa. Furthermore, the effects of substrate temperature and ambient N2 pressure on the combination of A1-N bonds and surface morphology of AIN films are also studied.
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| 关 键 词： | 氮化铝 薄膜 脉冲激光 沉积作用 |
| 收稿时间： | 2006-08-25 |
| 修稿时间： | 2006-08-25 |
Effects of Substrate Temperature and Nitrogen Pressure on Growth of AlN Films by Pulsed Laser Deposition |
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| LV Lei,LI Qing-Shan,LI Li,ZHANG Li-Chun,WANG Cai-Feng,QI Hong-Xia. Effects of Substrate Temperature and Nitrogen Pressure on Growth of AlN Films by Pulsed Laser Deposition[J]. Chinese Physics Letters, 2007, 24(2): 552-554 |
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| Authors: | LV Lei LI Qing-Shan LI Li ZHANG Li-Chun WANG Cai-Feng QI Hong-Xia |
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| Affiliation: | Department of Physics, Qufu Normal University, Shandong 273165 |
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| Abstract: | |
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| Keywords: | 81.05.Ea 81.15.Fg 68.55.Jk |
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