Mg doping reduced full width at half maximum of the near-band-edge emission in Mg doped ZnO films |
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| Authors: | Long Xue Li Xaing Lin Peng-Ting Cheng Xing-Wang Liu Ying and Cao Chuan-Bao |
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| Affiliation: | School for Materials Science & Engineering, Beijing Institute of Technology Beijing, Beijing 100081, China |
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| Abstract: | Sol--gol method was employed to synthesize Mg doped ZnO
films on Si substrates. The annealing temperature-dependent
structure and optical property of the produced samples were studied.
An interesting result observed is that increasing Mg concentration
in the studied samples induces the full width at half maximum (FWHM)
of their near-band-edge (NBE) emission decrease and the defect
related emission of the corresponding sample suppresses drastically.
The possible mechanism of the observed result is discussed. |
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| Keywords: | doping ZnO photoluminescence |
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