Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode |
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| Authors: | Lü Yuan-Jie Feng Zhi-Hong Gu Guo-Dong Dun Shao-Bo Yin Jia-Yun Han Ting-Ting Sheng Bai-Cheng Cai Shu-Jun Liu Bo Lin Zhao-Jun |
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| Affiliation: | a) Science and Technology on Application Specific Integrated Circuit (ASIC) Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China b) School of Physics, Shandong University, Jinan 250100, China |
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| Abstract: | An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage (G-V) curve and found to be in good agreement with the ones obtained by using the capacitance-voltage (C-V) curve integration and the plot of dV/d(ln I) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed. |
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| Keywords: | AlGaN/GaN heterostructure Schottky diode threshold voltage series resistance |
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