| AlGaN/GaN高电子迁移率晶体管温度传感器特性 |
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| 引用本文： | 刘旭阳,张贺秋,李冰冰,刘俊,薛东阳,王恒山,梁红伟,夏晓川.AlGaN/GaN高电子迁移率晶体管温度传感器特性[J].物理学报,2020(4):219-224. |
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| 作者姓名： | 刘旭阳 张贺秋 李冰冰 刘俊 薛东阳 王恒山 梁红伟 夏晓川 |
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| 作者单位： | 大连理工大学微电子学院 |
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| 基金项目： | 国家自然科学基金(批准号:ZX0180421,ZX20160406,11975257);大连市科技计划(批准号:ZX20180681)资助的课题~~ |
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| 摘 要： | 本文制作了基于无栅AlGaN/GaN高电子迁移率晶体管结构的温度传感器,并对其温度相关的电学特性进行了表征.实验测试了器件从50℃到400℃的变温电流-电压特性,研究了器件灵敏度随着器件沟道长宽比的变化,并研究了在300—500℃高温的空气和氮气中经过1 h恒温加热后器件的电学特性变化.理论与实验研究结果表明,随着器件沟道长宽比的增大,器件的灵敏度会随之上升;在固定电流0.01 A下,器件电压随温度变化的平均灵敏度为44.5 mV/℃.同时,稳定性实验显示器件具有较好的高温保持稳定性.
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| 关 键 词： | GAN 高电子迁移率晶体管 温度传感器 灵敏度 |
Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor |
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| Liu Xu-Yang,Zhang He-Qiu,Li Bing-Bing,Liu Jun,Xue Dong-Yang,Wang Heng-Shan,Liang Hong-Wei,Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor[J].Acta Physica Sinica,2020(4):219-224. |
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| Authors: | Liu Xu-Yang Zhang He-Qiu Li Bing-Bing Liu Jun Xue Dong-Yang Wang Heng-Shan Liang Hong-Wei Xia Xiao-Chuan |
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| Affiliation: | (School of Microelectronics,Dalian University of Technology,DaLian 116024,China) |
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| Abstract: | Semiconductor temperature sensors have been widely used in medical,industrial,aviation and civil fields due to their advantages such as high sensitivity,small size,low power consumption and strong anti-interference ability.However,most Si-based temperature sensors are not suitable for the application in high-temperature environments.The new AlGaN/GaN heterojunction material not only has a wide band gap,but also has a high two-dimensional electron gas concentration and carrier mobility.Therefore,the device made with it not only has good electrical properties,but also can be applied in ultra-high environments.In this paper,a temperature sensor based on gateless AlGaN/GaN high electron mobility transistor structure was fabricated and its temperature-dependent electrical properties were characterized.The temperature dependence of current-voltage characteristics of the device were tested from 50 to 400°C.The sensitivity of the device was studied as a function of the channel aspect ratio of the device.The stability of electrical properties was characterized after heating in air and nitrogen at 300—500°C for 1 hour.The theoretical and experimental results show that as the aspect ratio of the device increases,the sensitivity of the device increases.At a fixed current of 0.01 A,the average sensitivity of the device voltage with temperature changes is 44.5 mV/°C.Meanwhile,the good high temperature retention stability is shown during stability experiments. |
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| Keywords: | GaN high electron mobility transistor temperature sensor sensitivity |
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