| Theoretical Analysis of Characteristics of GaxInl—x NyAsl—y／GaAs Quantum Well Lasers with Different Intermediate Layers |
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| 引用本文： | 张玮,徐应强,牛智川,吴荣汉.Theoretical Analysis of Characteristics of GaxInl—x NyAsl—y／GaAs Quantum Well Lasers with Different Intermediate Layers[J].中国物理快报,2003,20(8):1261-1263. |
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| 作者姓名： | 张玮 徐应强 牛智川 吴荣汉 |
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| 作者单位： | StateKeyLaboratoryonIntegratedOptoelectronics,InstituteofSemiconductors,ChineseAcademyofSciences,POBox912,Beijing100083 |
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| 摘 要： | Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layero n the band structure, gain and differential gain of GalnNAs/GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GalnNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.
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| 关 键 词： | Ⅲ族化合物半导体 量子阱 砷化镓 GaInNAs／GaAs 铟镓砷化合物 特征 带结构 中间过渡层 |
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