| Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter |
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| 引用本文： | 张宇航,柴常春,于新海,杨银堂,刘阳,樊庆扬,史春蕾.Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter[J].中国物理 B,2017,26(2):28501-028501. |
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| 作者姓名： | 张宇航 柴常春 于新海 杨银堂 刘阳 樊庆扬 史春蕾 |
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| 作者单位： | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| 基金项目： | Project supported by the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214. XY.K). |
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| 摘 要： | The latch-up effect induced by high-power microwave(HPM) in complementary metal–oxide–semiconductor(CMOS) inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency(PRF) is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPMinduced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results.
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| 收稿时间： | 2016-06-30 |
Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter |
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| Affiliation: | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | The latch-up effect induced by high-power microwave (HPM) in complementary metal-oxide-semiconductor (CMOS) inverter is investigated in simulation and theory in this paper. The physical mechanisms of excess carrier injection and HPM-induced latch-up are proposed. Analysis on upset characteristic under pulsed wave reveals increasing susceptibility under shorter-width pulsed wave which satisfies experimental data, and the dependence of upset threshold on pulse repetitive frequency (PRF) is believed to be due to the accumulation of excess carriers. Moreover, the trend that HPM-induced latch-up is more likely to happen in shallow-well device is proposed.Finally, the process of self-recovery which is ever-reported in experiment with its correlation with supply voltage and power level is elaborated, and the conclusions are consistent with reported experimental results. |
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| Keywords: | high-power microwave latch-up repetitive pulse frequency supply voltage dependence |
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