Thermal stability improvement of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations using non-uniform finger spacing |
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| Authors: | Chen Liang Zhang Wan-Rong Jin Dong-Yue Shen Pei Xie Hong-Yun Ding Chun-Bao Xiao Ying Sun Bo-Tao and Wang Ren-Qing |
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| Affiliation: | College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | A method of non-uniform finger spacing is proposed to enhance thermal stability of a multiple finger power SiGe heterojunction bipolar transistor under different power dissipations. Temperature distribution on the emitter fingers of a multi-finger SiGe heterojunction bipolar transistor is studied using a numerical electro-thermal model. The results show that the SiGe heterojunction bipolar transistor with non-uniform finger spacing has a small temperature difference between fingers compared with a traditional uniform finger spacing heterojunction bipolar transistor at the same power dissipation. What is most important is that the ability to improve temperature non-uniformity is not weakened as power dissipation increases. So the method of non-uniform finger spacing is very effective in enhancing the thermal stability and the power handing capability of power device. Experimental results verify our conclusions. |
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| Keywords: | heterojunction bipolar transistor thermal coupling power dissipation |
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