| Photoelectric characteristics of silicon P–N junction with nanopillar texture:Analysis of X-ray photoelectron spectroscopy |
| |
| 引用本文： | 刘静,王嘉鸥,伊福廷,吴蕊,张念,奎热西.Photoelectric characteristics of silicon P–N junction with nanopillar texture:Analysis of X-ray photoelectron spectroscopy[J].中国物理 B,2014(9):294-297. |
| |
| 作者姓名： | 刘静 王嘉鸥 伊福廷 吴蕊 张念 奎热西 |
| |
| 作者单位： | Institute of High Energy Physics,Chinese Academy of Sciences;University of Chinese Academy of Sciences |
| |
| 基金项目： | supported by the National Natural Science Foundation of China(Grant No.50972144) |
| |
| 摘 要： | Silicon nanopillars are fabricated by inductively coupled plasma(ICP) dry etching with the cesium chloride(CsCl)islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus(P) diffusion by liquid dopant source(POCl3) at 870℃ to form P–N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy(XPS) is used to measure the Si 2p core levels of P–N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P–N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light.The energy shift of the Si 2p core level is-0.27 eV for the planar P–N junction and-0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.
|
| 关 键 词： | X-ray photoelectron spectroscopy(XPS) photoelectric characteristic P–N junction silicon nanopillar |
| 本文献已被 CNKI 维普 等数据库收录！ |
