| 超薄多晶硅的掺杂、钝化及光伏特性研究 |
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| 引用本文： | 宋志成,杨露,张春福,刘大伟,倪玉凤,张婷,魏凯峰.超薄多晶硅的掺杂、钝化及光伏特性研究[J].人工晶体学报,2022,51(3):434-440. |
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| 作者姓名： | 宋志成 杨露 张春福 刘大伟 倪玉凤 张婷 魏凯峰 |
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| 作者单位： | 1.西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安 710071;
2.青海黄河上游水电开发有限责任公司西安太阳能电力分公司,西安 710000 |
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| 摘 要： | 本文对70 nm超薄多晶硅的掺杂工艺、钝化性能及光伏特性进行了研究。确定了70 nm超薄多晶硅的掺杂工艺,研究表明当离子注入剂量为3.2×1015 cm-3,在855 ℃退火20 min时,70 nm超薄多晶硅的钝化性能可以达到与常规120 nm多晶硅相当的水平,且70 nm多晶硅的表面掺杂浓度达到5.6×1020 atoms/cm3,远高于120 nm掺杂多晶硅的表面掺杂浓度(2.5×1020 atoms/cm3)。基于70 nm超薄多晶硅厚度减薄和高表面浓度掺杂的特点,较低的寄生吸收和强场钝化效应使得在大尺寸(6英寸)直拉单晶硅片上加工的N型TOPCon太阳能电池的光电转换效率得到明显提升,主要电性能参数表现为:电流Isc升高20 mA,串联电阻Rs降低,填充因子FF增加0.3%,光电转换效率升高0.13%。
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| 关 键 词： | TOPCon太阳能电池 多晶硅 掺杂 离子注入 钝化接触 寄生吸收 光电转换效率 |
| 收稿时间： | 2021-12-16 |
Doping,Passivation and Photovoltaic Properties of Ultra-Thin Poly-Silicon |
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| SONG Zhicheng,YANG Lu,ZHANG Chunfu,LIU Dawei,NI Yufeng,ZHANG Ting,WEI Kaifeng.Doping,Passivation and Photovoltaic Properties of Ultra-Thin Poly-Silicon[J].Journal of Synthetic Crystals,2022,51(3):434-440. |
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| Authors: | SONG Zhicheng YANG Lu ZHANG Chunfu LIU Dawei NI Yufeng ZHANG Ting WEI Kaifeng |
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| Affiliation: | 1. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education, School of Microelectronics, Xidian University, Xi’an 710071, China;2. Xi’an Solar Power Branch of Qinghai Huanghe Hydropower Development Co., Ltd., Xi’an 710000, China |
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| Abstract: | The doping process, passivation and photovoltaic properties of 70 nm ultra-thin poly-silicon were studied in this paper. The optimal doping process for 70 nm ultra-thin poly-silicon was identified, the results show that when the ion implantation dose is 3.2×1015 cm-3 and annealed at 855 ℃ for 20 min, the passivation properties of 70 nm ultra-thin poly-silicon is comparable to that of conventional 120 nm poly-silicon, and the surface doping concentration value of 5.6×1020 atoms/cm3 for 70 nm ultra-thin poly-silicon is achieved, which is much higher than that of 120 nm doped poly-silicon (2.5×1020 atoms/cm3). Based on the characteristic of reduced thickness and heavy doping for 70 nm ultra-thin poly-silicon, the conversion efficiency of TOPCon solar cells processed on large area (6 inch) Cz wafers significantly improves due to the low parasitic absorption and excellent filed passivation effect. The Isc is increased by 20 mA and 0.3% improvement of FF, leading to an absolute efficiency gain of 0.13% for the champion conversion efficiency, as well as low series resistance. |
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| Keywords: | TOPCon solar cell poly-silicon doping ion implantation passivation contact parasitic absorption photoelectric conversion efficiency |
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