Investigation of the characteristics of GIDL current in 90nm CMOS technology |
| |
| Authors: | Chen Hai-Feng Hao Yue Ma Xiao-Hu Zhang Jin-Cheng Li Kang Cao Yan-Rong Zhang Jin-Feng Zhou Peng-Ju |
| |
| Affiliation: | School of Microelectronics, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China |
| |
| Abstract: | A specially designed experiment is performed for investigating gate-induceddrain leakage (GIDL) current in 90nm CMOS technology using lightly-dopeddrain (LDD) NMOSFET. This paper shows that the drain bias $V_{rm D}$ has astrong effect on GIDL current as compared with the gate bias $V_{rm G}$ at thesame drain--gate voltage $V_{rm DG}$. It is found that the difference between$I_{rm D}$ in the off-state $I_{rm D}-V_{rm G}$ characteristics and thecorresponding one in the off-state $I_{rm D}-V_{rm D}$ characteristics, which isdefined as $I_{rm DIFF}$, versus $V_{rm DG}$ shows a peak. The difference betweenthe influences of $V_{rm D}$ and $V_{rm G}$ on GIDL current is shownquantitatively by $I_{rm DIFF}$, especially in 90nm scale. The difference isdue to different hole tunnellings. Furthermore, the maximum $I_{rm DIFF}$($I_{rm DIFF,MAX})$ varies linearly with $V_{rm DG}$ in logarithmic coordinatesand also $V_{rm DG}$ at $I_{rm DIFF,MAX}$ with $V_{rm F}$ which is the characteristicvoltage of $I_{rm DIFF}$. The relations are studied and some relatedexpressions are given. |
| |
| Keywords: | GIDL 90nm CMOS technology band-to-band tunnelling |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理》浏览原始摘要信息 |
|
点击此处可从《中国物理》下载免费的PDF全文 |
|
