| 5英寸锑化铟晶片加工及表征 |
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| 引用本文： | 赵超,孔忠弟,董涛,吴卿,折伟林,王小龙,徐鹏艳,李乾,李达,李聪聪.5英寸锑化铟晶片加工及表征[J].人工晶体学报,2022,51(12):2014-2021. |
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| 作者姓名： | 赵超 孔忠弟 董涛 吴卿 折伟林 王小龙 徐鹏艳 李乾 李达 李聪聪 |
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| 作者单位： | 华北光电技术研究所,北京 100015 |
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| 摘 要： | 锑化铟(InSb)材料因其特殊的性质被广泛用于红外光电探测等领域。随着更大面阵中波红外焦平面探测器的发展以及对低成本InSb红外探测器的需求,所需的晶片材料尺寸也日益增加。本文通过采用新结构石墨托以及高精度低损伤单线切割实现了5英寸InSb晶体定向断段;采用低损伤边缘倒角技术同时优化研磨参数改善了5英寸InSb晶片研磨;通过优化贴片工序提高了5英寸InSb晶片抛光后的平整度;通过优化抛光液pH值以及配比提高了5英寸InSb晶片表面质量。同时,使用X射线晶体定向仪、原子力显微镜等测试仪器对5英寸InSb晶片的晶向及偏差、抛光表面宏观质量、几何参数、表面粗糙度、晶格质量进行了测试表征。测试结果表明,采用优化后的加工工艺制备出了高质量的5英寸InSb晶片,能够满足InSb红外探测器制备需求。
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| 关 键 词： | 锑化铟 5英寸 晶片 加工 高质量 红外探测器 |
| 收稿时间： | 2022-05-26 |
Processing and Characterization of 5 Inch InSb Wafer |
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| ZHAO Chao,KONG Zhongdi,DONG Tao,WU Qing,SHE Weilin,WANG Xiaolong,XU Pengyan,LI Qian,LI Da,LI Congcong.Processing and Characterization of 5 Inch InSb Wafer[J].Journal of Synthetic Crystals,2022,51(12):2014-2021. |
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| Authors: | ZHAO Chao KONG Zhongdi DONG Tao WU Qing SHE Weilin WANG Xiaolong XU Pengyan LI Qian LI Da LI Congcong |
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| Affiliation: | North China Research Institute of Electro-Optics, Beijing 100015, China |
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| Abstract: | Indium antimonide (InSb) materials have been widely used in infrared photoelectric detectors and other fields because of their special properties. With the development of larger arrays of mid-infrared focal plane detectors and a growing demand for low-cost InSb infrared detectors, the desired size for the InSb wafers also increases. In this paper, a new structure of graphite rest and high precision low damage single line cutting were combined to develop a 5 inch InSb crystal oriented segmentation. Low damage edge chamfering techniques while optimizing grinding parameters were used to improve the grinding of 5 inch InSb wafers. An optimized mounting process were used to further improve the flatness of polished 5 inch InSb wafers. Furthermore, the pH value and polishing solution ratio were optimized to improve the surface quality of 5 inch InSb wafers. At the same time, the crystal orientation and deviation, polished surface macroscopic quality, geometric parameters, surface roughness and lattice quality of 5 inch InSb wafers were analyzed using an X-ray crystal orientation instrument and atomic force microscope. The test results show that, high quality 5 inch InSb wafers can be created more readily by this newly optimized process, helping to meet the current demand for InSb materials in IR detectors and other fields. |
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| Keywords: | InSb 5 inch wafer processing high quality infrared detector |
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