Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers |
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| Affiliation: | Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
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| Abstract: | The AlGaN-based deep ultraviolet light-emitting diodes (LED) with double electron blocking layers (d-EBLs) on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency (IQE). The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells (QWs) enhances the electron-hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons. |
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| Keywords: | double electron blocking layers ultraviolet light-emitting diodes n-AlGaN electrostatic field |
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